The Influence of Boron Doping Concentration on MgH2 Electronic Structure
AuthorsKurko, Sandra V.
Paskaš Mamula, Bojana
MetadataShow full item record
We have performed ab initio electronic structure calculations of Mg1-xBxH2 compounds with different boron concentrations, ranging from x =0.0625 to 0.5. Full structural relaxation was performed in order to properly describe influence of dopant on host matrix. Results showed that there is a strong influence of boron concentration on structural and thermodynamic stability of compound. B-H bond length is substantially shorter then in Mg-H coordination polyhedron. Boron significantly contributes to density of states at Fermi level within energy gap. The width of boron electronic states heavily depends on boron concentration, causing reduction of energy gap of host MgH2, and leading to metallic nature of compound with highest boron concentration. The predicted thermodynamic instability of compounds with higher boron concentration is in agreement with experimental findings that under similar stoichiometry, boron with magnesium forms only complex hydride, Mg(BH4)(2). It is also shown that exi...stence of stable hydrides with MgH2 rutile structure and small concentration of boron is possible in principle and that boron can be used to further destabilize MgH2 in order to enhance its hydrogen sorption-desorption kinetics.
Source:Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics, 2011, 120, 2, 238-241
- Synthesis, processing and characterization of nanostructured materials for application in the field of energy, mechanical engineering, environmental protection and biomedicine (RS-45012)
- 12th Annual YUCOMAT Conference, Sep 06-10, 2010, Herceg Novi, Montenegro