Monte Carlo Calculation of the Energy Response Characteristics of a RadFET Radiation Detector
Апстракт
The Metal -Oxide Semiconductor Field-Effect-Transistor (MOSFET, RadFET) is frequently used as a sensor of ionizing radiation in nuclear-medicine, diagnostic-radiology, radiotherapy quality-assurance and in the nuclear and space industries. We focused our investigations on calculating the energy response of a p-type RadFET to low-energy photons in range from 12 keV to 2 MeV and on understanding the influence of uncertainties in the composition and geometry of the device in calculating the energy response function. All results were normalized to unit air kerma incident on the RadFET for incident photon energy of 1.1 MeV. The calculations of the energy response characteristics of a RadFET radiation detector were performed via Monte Carlo simulations using the MCNPX code and for a limited number of incident photon energies the FOTELP code was also used for the sake of comparison. The geometry of the RadFET was modeled as a simple stack of appropriate materials. Our goal was to obtain resul...ts with statistical uncertainties better than 1% (fulfilled in MCNPX calculations for all incident energies which resulted in simulations with 1 - 2x10(9) histories.
Извор:
Journal of Physics: Conference Series, 2010, 238Напомена:
- 13th IMEKO TC1-TC7 Joint Symposium Without Measurement No Science, Without Science No Measurement, Sep 01-03, 2010, City Univ London, London, England
DOI: 10.1088/1742-6596/238/1/012030
ISSN: 1742-6588
WoS: 000287784500030
Scopus: 2-s2.0-78651064259
Колекције
Институција/група
VinčaTY - CONF AU - Beličev, Petar AU - Spasić-Jokić, Vesna AU - Mayer, S. AU - Milosevic, M. AU - Ilic, R. AU - Pešić, Milan P. PY - 2010 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6899 AB - The Metal -Oxide Semiconductor Field-Effect-Transistor (MOSFET, RadFET) is frequently used as a sensor of ionizing radiation in nuclear-medicine, diagnostic-radiology, radiotherapy quality-assurance and in the nuclear and space industries. We focused our investigations on calculating the energy response of a p-type RadFET to low-energy photons in range from 12 keV to 2 MeV and on understanding the influence of uncertainties in the composition and geometry of the device in calculating the energy response function. All results were normalized to unit air kerma incident on the RadFET for incident photon energy of 1.1 MeV. The calculations of the energy response characteristics of a RadFET radiation detector were performed via Monte Carlo simulations using the MCNPX code and for a limited number of incident photon energies the FOTELP code was also used for the sake of comparison. The geometry of the RadFET was modeled as a simple stack of appropriate materials. Our goal was to obtain results with statistical uncertainties better than 1% (fulfilled in MCNPX calculations for all incident energies which resulted in simulations with 1 - 2x10(9) histories. C3 - Journal of Physics: Conference Series T1 - Monte Carlo Calculation of the Energy Response Characteristics of a RadFET Radiation Detector VL - 238 DO - 10.1088/1742-6596/238/1/012030 ER -
@conference{ author = "Beličev, Petar and Spasić-Jokić, Vesna and Mayer, S. and Milosevic, M. and Ilic, R. and Pešić, Milan P.", year = "2010", abstract = "The Metal -Oxide Semiconductor Field-Effect-Transistor (MOSFET, RadFET) is frequently used as a sensor of ionizing radiation in nuclear-medicine, diagnostic-radiology, radiotherapy quality-assurance and in the nuclear and space industries. We focused our investigations on calculating the energy response of a p-type RadFET to low-energy photons in range from 12 keV to 2 MeV and on understanding the influence of uncertainties in the composition and geometry of the device in calculating the energy response function. All results were normalized to unit air kerma incident on the RadFET for incident photon energy of 1.1 MeV. The calculations of the energy response characteristics of a RadFET radiation detector were performed via Monte Carlo simulations using the MCNPX code and for a limited number of incident photon energies the FOTELP code was also used for the sake of comparison. The geometry of the RadFET was modeled as a simple stack of appropriate materials. Our goal was to obtain results with statistical uncertainties better than 1% (fulfilled in MCNPX calculations for all incident energies which resulted in simulations with 1 - 2x10(9) histories.", journal = "Journal of Physics: Conference Series", title = "Monte Carlo Calculation of the Energy Response Characteristics of a RadFET Radiation Detector", volume = "238", doi = "10.1088/1742-6596/238/1/012030" }
Beličev, P., Spasić-Jokić, V., Mayer, S., Milosevic, M., Ilic, R.,& Pešić, M. P.. (2010). Monte Carlo Calculation of the Energy Response Characteristics of a RadFET Radiation Detector. in Journal of Physics: Conference Series, 238. https://doi.org/10.1088/1742-6596/238/1/012030
Beličev P, Spasić-Jokić V, Mayer S, Milosevic M, Ilic R, Pešić MP. Monte Carlo Calculation of the Energy Response Characteristics of a RadFET Radiation Detector. in Journal of Physics: Conference Series. 2010;238. doi:10.1088/1742-6596/238/1/012030 .
Beličev, Petar, Spasić-Jokić, Vesna, Mayer, S., Milosevic, M., Ilic, R., Pešić, Milan P., "Monte Carlo Calculation of the Energy Response Characteristics of a RadFET Radiation Detector" in Journal of Physics: Conference Series, 238 (2010), https://doi.org/10.1088/1742-6596/238/1/012030 . .