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dc.creatorRadisavljević, Ivana
dc.creatorNovaković, Nikola
dc.creatorIvanović, Nenad
dc.creatorRomčević, Nebojša Ž.
dc.creatorManasijević, Miodrag
dc.creatorMahnke, Heinz-Eberhard
dc.date.accessioned2018-03-03T14:40:58Z
dc.date.available2018-03-03T14:40:58Z
dc.date.issued2009
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.urihttps://vinar.vin.bg.ac.rs/handle/123456789/6866
dc.description.abstractThe problem of impurities and defect states in lead telluride-based semiconductors is of crucial importance for their practical applications. X-ray absorption fine structure (XAFS) techniques are capable to address some of the key issues regarding impurities position, their valent state, as well as the local structural changes of the host lattice in the immediate surrounding of the impurity atoms. In this paper we present the results of the Ni K-absorption edge XAFS studies of Ni-doped PbTe at different temperatures. Analysis of near edge and extended XAFS regions of the measured spectra provided information about exact local environment and lattice ordering around Ni atoms. (C) 2009 Elsevier B.V. All rights reserved.en
dc.rightsrestrictedAccessen
dc.sourcePhysica B: Condensed Matteren
dc.subjectLead tellurideen
dc.subjectImpuritiesen
dc.subjectDefectsen
dc.subjectXAFSen
dc.titleXAFS studies of nickel-doped lead tellurideen
dc.typearticleen
dc.rights.licenseARR
dcterms.abstractРадисављевиц, Ивана; Ромцевиц, Небојса; Манасијевиц, Миодраг; Новаковић Никола; Ивановић Ненад; Махнке, Хеинз-Еберхард;
dc.citation.volume404
dc.citation.issue23-24
dc.citation.spage5032
dc.citation.epage5034
dc.identifier.wos000276029300147
dc.identifier.doi10.1016/j.physb.2009.08.209
dc.citation.rankM23
dc.description.other25th International Conference on Defects in Semiconductors, Jul 20-24, 2009, St Petersburg, Russiaen
dc.identifier.scopus2-s2.0-74449087541


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