Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films
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Autori
Petrović, SuzanaPeruško, Davor
Gaković, Biljana M.
Mitrić, Miodrag
Kovač, Janez
Zalar, A.
Milinović, Velimir
Bogdanović-Radović, Ivančica
Milosavljević, Momir
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Metapodaci
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In this work we have studied the influence of thermal annealing on the structural and electrical properties of W-Ti thin films, deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 90:10 wt.%W-Ti target, using Ar ions, to a thickness of similar to 170 nm. After deposition the samples were annealed at 400 to 700 degrees C for 60 min, in a nitrogen ambient. Structural characterizations were performed by X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). A four-point probe was used for electrical characterization. It was found that the as-deposited films exhibit a polycrystalline structure in the form of columnar grains (2050 nm in diameter). Only b.c.c. W phase could be registered in the films, while any presence of crystalline Ti was hindered in XRD and electron diffraction patterns. Annealing at up to 600 degrees C resulted in an increase of the... mean grain size in the films, and a decrease of their sheet resistance. For these annealing temperatures we did not register any interaction at the W-Ti/Si interface. However. upon annealing at 700 degrees C, a progressed interaction between the film and the substrate occurred. Structural analyses suggest the formation of both W and Ti silicides. The estimated thickness of the formed metal-silicide layer is approximately 125 nm. Sheet resistance increased rapidly after annealing at 700 degrees C, because a large portion of the original metallic film was consumed in the reaction with silicon. (C) 2009 Elsevier B.V. All rights reserved.
Ključne reči:
W-Ti thin films / Thermal annealing / XPS / RBS / TEMIzvor:
Surface and Coatings Technology, 2010, 204, 12-13, 2099-2102Napomena:
- Symposium on Protective Coatings and Thin Films held at the 2009 E-MRS Spring Meeting, Jun 08-12, 2009, Strasbourg, France
DOI: 10.1016/j.surfcoat.2009.09.048
ISSN: 0257-8972
WoS: 000275692100049
Scopus: 2-s2.0-76349091604
Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Petrović, Suzana AU - Peruško, Davor AU - Gaković, Biljana M. AU - Mitrić, Miodrag AU - Kovač, Janez AU - Zalar, A. AU - Milinović, Velimir AU - Bogdanović-Radović, Ivančica AU - Milosavljević, Momir PY - 2010 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6861 AB - In this work we have studied the influence of thermal annealing on the structural and electrical properties of W-Ti thin films, deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 90:10 wt.%W-Ti target, using Ar ions, to a thickness of similar to 170 nm. After deposition the samples were annealed at 400 to 700 degrees C for 60 min, in a nitrogen ambient. Structural characterizations were performed by X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). A four-point probe was used for electrical characterization. It was found that the as-deposited films exhibit a polycrystalline structure in the form of columnar grains (2050 nm in diameter). Only b.c.c. W phase could be registered in the films, while any presence of crystalline Ti was hindered in XRD and electron diffraction patterns. Annealing at up to 600 degrees C resulted in an increase of the mean grain size in the films, and a decrease of their sheet resistance. For these annealing temperatures we did not register any interaction at the W-Ti/Si interface. However. upon annealing at 700 degrees C, a progressed interaction between the film and the substrate occurred. Structural analyses suggest the formation of both W and Ti silicides. The estimated thickness of the formed metal-silicide layer is approximately 125 nm. Sheet resistance increased rapidly after annealing at 700 degrees C, because a large portion of the original metallic film was consumed in the reaction with silicon. (C) 2009 Elsevier B.V. All rights reserved. T2 - Surface and Coatings Technology T1 - Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films VL - 204 IS - 12-13 SP - 2099 EP - 2102 DO - 10.1016/j.surfcoat.2009.09.048 ER -
@article{ author = "Petrović, Suzana and Peruško, Davor and Gaković, Biljana M. and Mitrić, Miodrag and Kovač, Janez and Zalar, A. and Milinović, Velimir and Bogdanović-Radović, Ivančica and Milosavljević, Momir", year = "2010", abstract = "In this work we have studied the influence of thermal annealing on the structural and electrical properties of W-Ti thin films, deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 90:10 wt.%W-Ti target, using Ar ions, to a thickness of similar to 170 nm. After deposition the samples were annealed at 400 to 700 degrees C for 60 min, in a nitrogen ambient. Structural characterizations were performed by X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). A four-point probe was used for electrical characterization. It was found that the as-deposited films exhibit a polycrystalline structure in the form of columnar grains (2050 nm in diameter). Only b.c.c. W phase could be registered in the films, while any presence of crystalline Ti was hindered in XRD and electron diffraction patterns. Annealing at up to 600 degrees C resulted in an increase of the mean grain size in the films, and a decrease of their sheet resistance. For these annealing temperatures we did not register any interaction at the W-Ti/Si interface. However. upon annealing at 700 degrees C, a progressed interaction between the film and the substrate occurred. Structural analyses suggest the formation of both W and Ti silicides. The estimated thickness of the formed metal-silicide layer is approximately 125 nm. Sheet resistance increased rapidly after annealing at 700 degrees C, because a large portion of the original metallic film was consumed in the reaction with silicon. (C) 2009 Elsevier B.V. All rights reserved.", journal = "Surface and Coatings Technology", title = "Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films", volume = "204", number = "12-13", pages = "2099-2102", doi = "10.1016/j.surfcoat.2009.09.048" }
Petrović, S., Peruško, D., Gaković, B. M., Mitrić, M., Kovač, J., Zalar, A., Milinović, V., Bogdanović-Radović, I.,& Milosavljević, M.. (2010). Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films. in Surface and Coatings Technology, 204(12-13), 2099-2102. https://doi.org/10.1016/j.surfcoat.2009.09.048
Petrović S, Peruško D, Gaković BM, Mitrić M, Kovač J, Zalar A, Milinović V, Bogdanović-Radović I, Milosavljević M. Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films. in Surface and Coatings Technology. 2010;204(12-13):2099-2102. doi:10.1016/j.surfcoat.2009.09.048 .
Petrović, Suzana, Peruško, Davor, Gaković, Biljana M., Mitrić, Miodrag, Kovač, Janez, Zalar, A., Milinović, Velimir, Bogdanović-Radović, Ivančica, Milosavljević, Momir, "Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films" in Surface and Coatings Technology, 204, no. 12-13 (2010):2099-2102, https://doi.org/10.1016/j.surfcoat.2009.09.048 . .