Hamilton-Jacobi equation with non-convex Hamiltonians in three dimensional level set simulations of the wet etching of silicon
Abstract
In this paper we have shown that profile evolution during anisotropic wet etching of silicon can be described by the non-convex Hamiltonian arising in the Hamilton-Jacobi equation for the level set function. Angular dependence of the silicon etching rate is determined on the basis of the silicon crystal symmetry properties.
Keywords:
Hamilton-Jacobi equation / non-convex Hamiltonian / level set method / wet etching / silicon / MEMS / profile evolutionSource:
Computational Chemistry and Applications in Electronics, 2007, 48-+Note:
- 1st WSEAS International Conference on Computational Chemistry, Dec 29-31, 2007, Cairo, Egypt
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Institution/Community
VinčaTY - CONF AU - Rađenović, Branislav AU - Radjenovic, Marija Radmilovic PY - 2007 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6713 AB - In this paper we have shown that profile evolution during anisotropic wet etching of silicon can be described by the non-convex Hamiltonian arising in the Hamilton-Jacobi equation for the level set function. Angular dependence of the silicon etching rate is determined on the basis of the silicon crystal symmetry properties. C3 - Computational Chemistry and Applications in Electronics T1 - Hamilton-Jacobi equation with non-convex Hamiltonians in three dimensional level set simulations of the wet etching of silicon SP - 48 EP - + UR - https://hdl.handle.net/21.15107/rcub_vinar_6713 ER -
@conference{ author = "Rađenović, Branislav and Radjenovic, Marija Radmilovic", year = "2007", abstract = "In this paper we have shown that profile evolution during anisotropic wet etching of silicon can be described by the non-convex Hamiltonian arising in the Hamilton-Jacobi equation for the level set function. Angular dependence of the silicon etching rate is determined on the basis of the silicon crystal symmetry properties.", journal = "Computational Chemistry and Applications in Electronics", title = "Hamilton-Jacobi equation with non-convex Hamiltonians in three dimensional level set simulations of the wet etching of silicon", pages = "48-+", url = "https://hdl.handle.net/21.15107/rcub_vinar_6713" }
Rađenović, B.,& Radjenovic, M. R.. (2007). Hamilton-Jacobi equation with non-convex Hamiltonians in three dimensional level set simulations of the wet etching of silicon. in Computational Chemistry and Applications in Electronics, 48-+. https://hdl.handle.net/21.15107/rcub_vinar_6713
Rađenović B, Radjenovic MR. Hamilton-Jacobi equation with non-convex Hamiltonians in three dimensional level set simulations of the wet etching of silicon. in Computational Chemistry and Applications in Electronics. 2007;:48-+. https://hdl.handle.net/21.15107/rcub_vinar_6713 .
Rađenović, Branislav, Radjenovic, Marija Radmilovic, "Hamilton-Jacobi equation with non-convex Hamiltonians in three dimensional level set simulations of the wet etching of silicon" in Computational Chemistry and Applications in Electronics (2007):48-+, https://hdl.handle.net/21.15107/rcub_vinar_6713 .