Hamilton-Jacobi equation with non-convex Hamiltonians in three dimensional level set simulations of the wet etching of silicon
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In this paper we have shown that profile evolution during anisotropic wet etching of silicon can be described by the non-convex Hamiltonian arising in the Hamilton-Jacobi equation for the level set function. Angular dependence of the silicon etching rate is determined on the basis of the silicon crystal symmetry properties.
Keywords:Hamilton-Jacobi equation / non-convex Hamiltonian / level set method / wet etching / silicon / MEMS / profile evolution
Source:Computational Chemistry and Applications in Electronics, 2007, 48-+
- 1st WSEAS International Conference on Computational Chemistry, Dec 29-31, 2007, Cairo, Egypt