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dc.creatorVasic, A
dc.creatorOsmokrovic, P
dc.creatorLončar, Boris B.
dc.creatorStanković, Srboljub J.
dc.date.accessioned2018-03-03T14:11:13Z
dc.date.available2018-03-03T14:11:13Z
dc.date.issued2005
dc.identifier.issn0255-5476 (print)
dc.identifier.urihttp://vinar.vin.bg.ac.rs/handle/123456789/6519
dc.description.abstractParameters that characterize semiconductor devices are often determined with difficulty, and their values very frequently depend on the method used for measurements and analysis. The extraction of diode parameters from the obtained I-V measurements could be complicated by their dependence on the voltage and the presence of series resistance. Therefore, an interpretation of the experimental I-V data must be very carefully made. In this paper, some methods for obtaining diode parameters such as saturation current, ideality factor and series resistance are presented. An evaluation of these methods based on their application for the extraction of the relevant parameters of photodiodes is also performed. Some of the methods that produce reliable and reproducible results are evaluated based on the experimentally obtained results, and in the view of the complexity of the used methods and their limitations.en
dc.rightsrestrictedAccessen
dc.sourceMaterials Science Forumen
dc.subjectI-V dataen
dc.subjectdiode parametersen
dc.subjectevaluation of methodsen
dc.subjectextractionsen
dc.titleExtraction of parameters from I-V data for nonideal photodetectors: A comparative studyen
dc.typearticleen
dcterms.abstractОсмокровиц, П; Станковиц, С; Лонцар, Б; Васиц, A;
dc.citation.volume494
dc.citation.spage83
dc.citation.epage88
dc.identifier.wos000230985800015
dc.identifier.doi10.4028/www.scientific.net/MSF.494.83
dc.citation.rankM23
dc.description.otherCurrent Research in Advanced Materials and Processes, 6th Conference of the Yugoslav-Materials-Research-Society, Sep 13-17, 2004, Herceg Novi, Montenegroen


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