Lattice distortion around impurity atoms as dopants in CdTe
Nema prikaza
Autori
Mahnke, Heinz-EberhardHaas, H
Holub-Krappe, E
Koteski, Vasil J.

Novaković, Nikola

Fochuk, P

Panchuk, O

Članak u časopisu
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
We have measured the lattice distortion around As (acceptor), Se (isovalent), and Br (donor) in CdTe with fluorescence detected X-ray absorption spectroscopy (XAFS). The experimental challenge lies in the compromise between a concentration high enough for X-ray absorption and low enough to avoid compensation and clustering. We could experimentally verify the lattice relaxation with a bond length reduction of 8% around the As atom as inferred indirectly from ab initio calculations of the electric field gradient in comparison with the measured value in a Perturbed Angular Correlation (PAC) experiment as recently reported. Our calculations of relaxation were performed with the WIEN97 package using the linearised augmented plane wave (LAPW) method and the FHI96md pseudopotential (PP) program. Using a super-cell approach for As on the Te site in CdTe, we find good convergence with increasing cell size so that the result can be taken as representative for the low doping limit. The extension ...to the neighbouring isovalent element Se again yields perfect agreement between experiment and model calculation with a sizeable lattice mismatch. In the case of Br, we find a sizeable increase of the bond length which may be taken as evidence for the high tendency of Br to form a Br A-center (Br plus metal vacancy) in CdTe. (c) 2004 Elsevier B.V. All rights reserved.
Ključne reči:
lattice relaxation / dopants in CdTe / fluorescence detected X-ray absorption / calculations with density functional theories with linearised / augmented plane wave and pseudopotential methodsIzvor:
Thin Solid Films, 2005, 480, 279-282Napomena:
- EMRS Symposium on Thin Film Chalcogenide Photovoltaic Materials, May 24-28, 2004, Strasbourg, France
DOI: 10.1016/j.tsf.2004.11.059
ISSN: 0040-6090
WoS: 000229173600056
Scopus: 2-s2.0-18444371162
Kolekcije
Institucija
VinčaTY - JOUR AU - Mahnke, Heinz-Eberhard AU - Haas, H AU - Holub-Krappe, E AU - Koteski, Vasil J. AU - Novaković, Nikola AU - Fochuk, P AU - Panchuk, O PY - 2005 UR - http://vinar.vin.bg.ac.rs/handle/123456789/6507 AB - We have measured the lattice distortion around As (acceptor), Se (isovalent), and Br (donor) in CdTe with fluorescence detected X-ray absorption spectroscopy (XAFS). The experimental challenge lies in the compromise between a concentration high enough for X-ray absorption and low enough to avoid compensation and clustering. We could experimentally verify the lattice relaxation with a bond length reduction of 8% around the As atom as inferred indirectly from ab initio calculations of the electric field gradient in comparison with the measured value in a Perturbed Angular Correlation (PAC) experiment as recently reported. Our calculations of relaxation were performed with the WIEN97 package using the linearised augmented plane wave (LAPW) method and the FHI96md pseudopotential (PP) program. Using a super-cell approach for As on the Te site in CdTe, we find good convergence with increasing cell size so that the result can be taken as representative for the low doping limit. The extension to the neighbouring isovalent element Se again yields perfect agreement between experiment and model calculation with a sizeable lattice mismatch. In the case of Br, we find a sizeable increase of the bond length which may be taken as evidence for the high tendency of Br to form a Br A-center (Br plus metal vacancy) in CdTe. (c) 2004 Elsevier B.V. All rights reserved. T2 - Thin Solid Films T1 - Lattice distortion around impurity atoms as dopants in CdTe VL - 480 SP - 279 EP - 282 DO - 10.1016/j.tsf.2004.11.059 ER -
@article{ author = "Mahnke, Heinz-Eberhard and Haas, H and Holub-Krappe, E and Koteski, Vasil J. and Novaković, Nikola and Fochuk, P and Panchuk, O", year = "2005", url = "http://vinar.vin.bg.ac.rs/handle/123456789/6507", abstract = "We have measured the lattice distortion around As (acceptor), Se (isovalent), and Br (donor) in CdTe with fluorescence detected X-ray absorption spectroscopy (XAFS). The experimental challenge lies in the compromise between a concentration high enough for X-ray absorption and low enough to avoid compensation and clustering. We could experimentally verify the lattice relaxation with a bond length reduction of 8% around the As atom as inferred indirectly from ab initio calculations of the electric field gradient in comparison with the measured value in a Perturbed Angular Correlation (PAC) experiment as recently reported. Our calculations of relaxation were performed with the WIEN97 package using the linearised augmented plane wave (LAPW) method and the FHI96md pseudopotential (PP) program. Using a super-cell approach for As on the Te site in CdTe, we find good convergence with increasing cell size so that the result can be taken as representative for the low doping limit. The extension to the neighbouring isovalent element Se again yields perfect agreement between experiment and model calculation with a sizeable lattice mismatch. In the case of Br, we find a sizeable increase of the bond length which may be taken as evidence for the high tendency of Br to form a Br A-center (Br plus metal vacancy) in CdTe. (c) 2004 Elsevier B.V. All rights reserved.", journal = "Thin Solid Films", title = "Lattice distortion around impurity atoms as dopants in CdTe", volume = "480", pages = "279-282", doi = "10.1016/j.tsf.2004.11.059" }
Mahnke H, Haas H, Holub-Krappe E, Koteski VJ, Novaković N, Fochuk P, Panchuk O. Lattice distortion around impurity atoms as dopants in CdTe. Thin Solid Films. 2005;480:279-282
Mahnke, H., Haas, H., Holub-Krappe, E., Koteski, V. J., Novaković, N., Fochuk, P.,& Panchuk, O. (2005). Lattice distortion around impurity atoms as dopants in CdTe. Thin Solid Films, 480, 279-282. https://doi.org/10.1016/j.tsf.2004.11.059
Mahnke Heinz-Eberhard, Haas H, Holub-Krappe E, Koteski Vasil J., Novaković Nikola, Fochuk P, Panchuk O, "Lattice distortion around impurity atoms as dopants in CdTe" 480 (2005):279-282, https://doi.org/10.1016/j.tsf.2004.11.059 .