Temperature stability of the photogeneration rate in silicon thin film with back diffuse reflector
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The influence of temperature and other physical parameters (incident photon wavelength, Si wafer thickness, average diffuse reflectance of the back reflector) on the carrier photogeneration rate in Si thin film (less than or equal to50 mum) with a non-ideal diffuse Lambertian back reflector was studied. An analytical model for the non-ideal diffuse Lambertian back reflector - a surface that diffuses light according to a cosine law, producing full-hemisphere light scattering, was applied. Temperature dependency of the absorption coefficient was obtained by extrapolating the experimental curve of Si absorption coefficient at 300 K. Temperature dependency of other parameters was not considered. The photogeneration rate curves shift with increase in temperature to higher values, but decrease more rapidly as the rate within Si, which leads to their crossing. It means that there is a layer at a certain depth in Si thin film in which photogeneration rate is temperature independent. This analy...sis also provides estimation of the depth of that layer for different back reflector parameters and incident photon wavelengths.
Keywords:absorption coefficient / Lambertian back reflector / photogeneration / Si thin film
Source:Materials Science Forum, 2003, 413, 165-170
- 4th Yugoslav-Materials-Research-Society Conference, Sep 10-14, 2001, Herceg Novi, Yugoslavia