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Angular distributions of ions channeled in the 〈1 0 0〉 Si crystals

Нема приказа
Аутори
Petrović, Srđan M.
Korica, Sanja
Kokkoris, Michael
Nešković, Nebojša B.
Чланак у часопису (Објављена верзија)
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Апстракт
In this study we analyze the angular distributions of Ne10+ ions channeled in the LT 100 GT Si crystals. The ion energy is 60 MeV and the crystal thickness is varied from 286 to 3435 nm. This thickness range corresponds to the reduced crystal thickness range from 0.5 to 6, i.e. from the second to the twelfth rainbow cycle. The angular distributions were obtained via the numerical solution of the ion equations of motion and the computer simulation method. The analysis shows that the angular distribution has a periodic behavior. We also analyze the transmission patterns corresponding to the angular distributions. These patterns should be compared to the experimental patterns obtainable by a two-dimensional position sensitive detector. We demonstrate that, when the ion beam divergence is sufficiently large, i.e. much larger than the critical angle for channeling, the channeling star effect occurs in the transmission patterns.
Извор:
Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2002, 193, 152-159
Напомена:
  • 19th International Conference on Atomic Collisions in Solids, Jul 29-Aug 03, 2001, Paris, France

DOI: 10.1016/S0168-583X(02)00742-5

ISSN: 0168-583X

WoS: 000177055500026

Scopus: 2-s2.0-0036609034
[ Google Scholar ]
19
20
URI
https://vinar.vin.bg.ac.rs/handle/123456789/6334
Колекције
  • 010 - Laboratorija za fiziku
  • Radovi istraživača
Институција/група
Vinča
TY  - JOUR
AU  - Petrović, Srđan M.
AU  - Korica, Sanja
AU  - Kokkoris, Michael
AU  - Nešković, Nebojša B.
PY  - 2002
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6334
AB  - In this study we analyze the angular distributions of Ne10+ ions channeled in the LT 100 GT Si crystals. The ion energy is 60 MeV and the crystal thickness is varied from 286 to 3435 nm. This thickness range corresponds to the reduced crystal thickness range from 0.5 to 6, i.e. from the second to the twelfth rainbow cycle. The angular distributions were obtained via the numerical solution of the ion equations of motion and the computer simulation method. The analysis shows that the angular distribution has a periodic behavior. We also analyze the transmission patterns corresponding to the angular distributions. These patterns should be compared to the experimental patterns obtainable by a two-dimensional position sensitive detector. We demonstrate that, when the ion beam divergence is sufficiently large, i.e. much larger than the critical angle for channeling, the channeling star effect occurs in the transmission patterns.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Angular distributions of ions channeled in the 〈1 0 0〉 Si crystals
VL  - 193
SP  - 152
EP  - 159
DO  - 10.1016/S0168-583X(02)00742-5
ER  - 
@article{
author = "Petrović, Srđan M. and Korica, Sanja and Kokkoris, Michael and Nešković, Nebojša B.",
year = "2002",
abstract = "In this study we analyze the angular distributions of Ne10+ ions channeled in the LT 100 GT Si crystals. The ion energy is 60 MeV and the crystal thickness is varied from 286 to 3435 nm. This thickness range corresponds to the reduced crystal thickness range from 0.5 to 6, i.e. from the second to the twelfth rainbow cycle. The angular distributions were obtained via the numerical solution of the ion equations of motion and the computer simulation method. The analysis shows that the angular distribution has a periodic behavior. We also analyze the transmission patterns corresponding to the angular distributions. These patterns should be compared to the experimental patterns obtainable by a two-dimensional position sensitive detector. We demonstrate that, when the ion beam divergence is sufficiently large, i.e. much larger than the critical angle for channeling, the channeling star effect occurs in the transmission patterns.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Angular distributions of ions channeled in the 〈1 0 0〉 Si crystals",
volume = "193",
pages = "152-159",
doi = "10.1016/S0168-583X(02)00742-5"
}
Petrović, S. M., Korica, S., Kokkoris, M.,& Nešković, N. B.. (2002). Angular distributions of ions channeled in the 〈1 0 0〉 Si crystals. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 193, 152-159.
https://doi.org/10.1016/S0168-583X(02)00742-5
Petrović SM, Korica S, Kokkoris M, Nešković NB. Angular distributions of ions channeled in the 〈1 0 0〉 Si crystals. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2002;193:152-159.
doi:10.1016/S0168-583X(02)00742-5 .
Petrović, Srđan M., Korica, Sanja, Kokkoris, Michael, Nešković, Nebojša B., "Angular distributions of ions channeled in the 〈1 0 0〉 Si crystals" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 193 (2002):152-159,
https://doi.org/10.1016/S0168-583X(02)00742-5 . .

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