Interface mixing in Ta/Si bilayers with Ar ions

Abstract

We report on the room-temperature synthesis of the low-resistivity TaSi2 phase using ion-beam mixing of Ta/Si bilayers with Ar ions. The formation of the silicide phase is observed for different damage energies deposited at the Tal Si interface. The variance Delta sigma(2) of the reacted (TaSi2) layer thickness varies linearly with the ion fluence Phi and the reaction rate Delta sigma(2)/Phi, is proportional to the deposited damage energy density F-D. The measured mixing/reaction efficiency, Delta sigma(2)/Phi F-D = 10 +/- 1 nm(5)/keV, is in agreement with the value calculated by the model of compound formation under local thermal spikes. (C) 2000 Elsevier Science B.V. All rights reserved.