Energy loss of ions channeled in a thin crystal
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The energy loss distributions of Ne10+ ions channeled in a  Si thin crystal are considered. The thickness of the crystal is 500 nm (921 atomic layers), while the ion energy is varied from 1 to 35 MeV per nucleon. The energy loss distributions were obtained by the computer simulation method using the numerical solution of the equations of motion of the ion. We used Lindhards continuum interaction potential of the ion and the crystal, and the Bethe formula for the stopping power of the electron gas of the crystal. The results of the calculations are explained via the effect of zero-degree focusing of the channeled ions and the crystal rainbow effect.
Keywords:channeling / energy loss
Source:Radiation Effects and Defects in Solids, 1997, 141, 1-4, 223-234
- 3rd International Conference on Computer Simulation of Radiation Effects in Solids (COSIRES), Jul 22-26, 1996, Univ Surrey, Guildford, England