Preparation of TiO2 and ZnO thin films by dip-coating method
Апстракт
TiO2 and ZnO thin films were prepared by dip-coating method from TiCl4, and Zn(NO3)(2) precursor solutions, respectively. Basic parameters of the process such as temperature of thermal treatment, heating and cooling regimes, and number of cycles required for obtaining uniformly coated substrates were defined. Microstructural analysis showed that at least 20 cycles must be repeated to obtain a completely covered substrate and continual film of TiO2 at 823 K. In the case of TiO2 film thermally treated at 723 K even n=30 was not enough to produce a continual film. Preparation of continual film of ZnO requires at least n=22, at 773 K. Microstructure and roughness of the prepared films were investigated by AFM method.
Кључне речи:
dip-coating / thin film / ZnO / TiO2 / AFMИзвор:
Materials Science Forum, 1998, 282-2, 147-152Напомена:
- Advanced Materials and Processes, 2nd Yugoslav Conference on Advanced Materials (YUGOMAT II), Sep 15-19, 1997, Herceg Novi, Yugoslavia
DOI: 10.4028/www.scientific.net/MSF.282-283.147
ISSN: 0255-5476
WoS: 000075079900020
[ Google Scholar ]Колекције
Институција/група
VinčaTY - JOUR AU - Ignjatović, Nenad L. AU - Brankovic, Z AU - Dramićanin, Miroslav AU - Nedeljković, Jovan AU - Uskoković, Dragan PY - 1998 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6246 AB - TiO2 and ZnO thin films were prepared by dip-coating method from TiCl4, and Zn(NO3)(2) precursor solutions, respectively. Basic parameters of the process such as temperature of thermal treatment, heating and cooling regimes, and number of cycles required for obtaining uniformly coated substrates were defined. Microstructural analysis showed that at least 20 cycles must be repeated to obtain a completely covered substrate and continual film of TiO2 at 823 K. In the case of TiO2 film thermally treated at 723 K even n=30 was not enough to produce a continual film. Preparation of continual film of ZnO requires at least n=22, at 773 K. Microstructure and roughness of the prepared films were investigated by AFM method. T2 - Materials Science Forum T1 - Preparation of TiO2 and ZnO thin films by dip-coating method VL - 282-2 SP - 147 EP - 152 DO - 10.4028/www.scientific.net/MSF.282-283.147 ER -
@article{ author = "Ignjatović, Nenad L. and Brankovic, Z and Dramićanin, Miroslav and Nedeljković, Jovan and Uskoković, Dragan", year = "1998", abstract = "TiO2 and ZnO thin films were prepared by dip-coating method from TiCl4, and Zn(NO3)(2) precursor solutions, respectively. Basic parameters of the process such as temperature of thermal treatment, heating and cooling regimes, and number of cycles required for obtaining uniformly coated substrates were defined. Microstructural analysis showed that at least 20 cycles must be repeated to obtain a completely covered substrate and continual film of TiO2 at 823 K. In the case of TiO2 film thermally treated at 723 K even n=30 was not enough to produce a continual film. Preparation of continual film of ZnO requires at least n=22, at 773 K. Microstructure and roughness of the prepared films were investigated by AFM method.", journal = "Materials Science Forum", title = "Preparation of TiO2 and ZnO thin films by dip-coating method", volume = "282-2", pages = "147-152", doi = "10.4028/www.scientific.net/MSF.282-283.147" }
Ignjatović, N. L., Brankovic, Z., Dramićanin, M., Nedeljković, J.,& Uskoković, D.. (1998). Preparation of TiO2 and ZnO thin films by dip-coating method. in Materials Science Forum, 282-2, 147-152. https://doi.org/10.4028/www.scientific.net/MSF.282-283.147
Ignjatović NL, Brankovic Z, Dramićanin M, Nedeljković J, Uskoković D. Preparation of TiO2 and ZnO thin films by dip-coating method. in Materials Science Forum. 1998;282-2:147-152. doi:10.4028/www.scientific.net/MSF.282-283.147 .
Ignjatović, Nenad L., Brankovic, Z, Dramićanin, Miroslav, Nedeljković, Jovan, Uskoković, Dragan, "Preparation of TiO2 and ZnO thin films by dip-coating method" in Materials Science Forum, 282-2 (1998):147-152, https://doi.org/10.4028/www.scientific.net/MSF.282-283.147 . .