Structural aspects of changes induced in PbTe by doping with Mn, In and Ga
Samo za registrovane korisnike
2013
Autori
Radisavljević, IvanaIvanović, Nenad
Novaković, Nikola
Romčević, Nebojša Ž.
Mitrić, Miodrag
Andrić, Velibor
Mahnke, Heinz-Eberhard
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
The paper presents the extended results of structural investigations of Pb0.9Mn0.1Te, and Pb0.9Mn0.1Te systems doped with In (2 at.%) and Ga (4 at.%) by means of EXAFS (extended X-ray absorption fine structure) technique. EXAFS measurements performed at Te-, Mn-, In- and Ga-K absorption edges at different temperatures are complemented with X-ray diffraction, flame absorption and X-ray fluorescence analysis. That way the complete information about elemental concentration; crystal structure; local environment around constitutive and impurity atoms (including their displacements from the regular lattice positions); local and long-range ordering; and the overall influence of doping on the host crystal structure is derived. The obtained results represent an important step towards understanding the structural aspects of doping of lead telluride-based semiconductors with Mn and group III elements and their connection to electronic and optical phenomena important for their applications.
Izvor:
Journal of Materials Science, 2013, 48, 23, 8084-8100Finansiranje / projekti:
- Optoelektronski nanodimenzioni sistemi - put ka primeni (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-45003)
DOI: 10.1007/s10853-013-7621-1
ISSN: 0022-2461
WoS: 000324111000006
Scopus: 2-s2.0-84884287303
Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Radisavljević, Ivana AU - Ivanović, Nenad AU - Novaković, Nikola AU - Romčević, Nebojša Ž. AU - Mitrić, Miodrag AU - Andrić, Velibor AU - Mahnke, Heinz-Eberhard PY - 2013 UR - https://vinar.vin.bg.ac.rs/handle/123456789/5671 AB - The paper presents the extended results of structural investigations of Pb0.9Mn0.1Te, and Pb0.9Mn0.1Te systems doped with In (2 at.%) and Ga (4 at.%) by means of EXAFS (extended X-ray absorption fine structure) technique. EXAFS measurements performed at Te-, Mn-, In- and Ga-K absorption edges at different temperatures are complemented with X-ray diffraction, flame absorption and X-ray fluorescence analysis. That way the complete information about elemental concentration; crystal structure; local environment around constitutive and impurity atoms (including their displacements from the regular lattice positions); local and long-range ordering; and the overall influence of doping on the host crystal structure is derived. The obtained results represent an important step towards understanding the structural aspects of doping of lead telluride-based semiconductors with Mn and group III elements and their connection to electronic and optical phenomena important for their applications. T2 - Journal of Materials Science T1 - Structural aspects of changes induced in PbTe by doping with Mn, In and Ga VL - 48 IS - 23 SP - 8084 EP - 8100 DO - 10.1007/s10853-013-7621-1 ER -
@article{ author = "Radisavljević, Ivana and Ivanović, Nenad and Novaković, Nikola and Romčević, Nebojša Ž. and Mitrić, Miodrag and Andrić, Velibor and Mahnke, Heinz-Eberhard", year = "2013", abstract = "The paper presents the extended results of structural investigations of Pb0.9Mn0.1Te, and Pb0.9Mn0.1Te systems doped with In (2 at.%) and Ga (4 at.%) by means of EXAFS (extended X-ray absorption fine structure) technique. EXAFS measurements performed at Te-, Mn-, In- and Ga-K absorption edges at different temperatures are complemented with X-ray diffraction, flame absorption and X-ray fluorescence analysis. That way the complete information about elemental concentration; crystal structure; local environment around constitutive and impurity atoms (including their displacements from the regular lattice positions); local and long-range ordering; and the overall influence of doping on the host crystal structure is derived. The obtained results represent an important step towards understanding the structural aspects of doping of lead telluride-based semiconductors with Mn and group III elements and their connection to electronic and optical phenomena important for their applications.", journal = "Journal of Materials Science", title = "Structural aspects of changes induced in PbTe by doping with Mn, In and Ga", volume = "48", number = "23", pages = "8084-8100", doi = "10.1007/s10853-013-7621-1" }
Radisavljević, I., Ivanović, N., Novaković, N., Romčević, N. Ž., Mitrić, M., Andrić, V.,& Mahnke, H.. (2013). Structural aspects of changes induced in PbTe by doping with Mn, In and Ga. in Journal of Materials Science, 48(23), 8084-8100. https://doi.org/10.1007/s10853-013-7621-1
Radisavljević I, Ivanović N, Novaković N, Romčević NŽ, Mitrić M, Andrić V, Mahnke H. Structural aspects of changes induced in PbTe by doping with Mn, In and Ga. in Journal of Materials Science. 2013;48(23):8084-8100. doi:10.1007/s10853-013-7621-1 .
Radisavljević, Ivana, Ivanović, Nenad, Novaković, Nikola, Romčević, Nebojša Ž., Mitrić, Miodrag, Andrić, Velibor, Mahnke, Heinz-Eberhard, "Structural aspects of changes induced in PbTe by doping with Mn, In and Ga" in Journal of Materials Science, 48, no. 23 (2013):8084-8100, https://doi.org/10.1007/s10853-013-7621-1 . .