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dc.creatorPejović, Milić M.
dc.creatorCiraj-Bjelac, Olivera
dc.creatorKovačević, Milojko
dc.creatorRajovic, Zoran
dc.creatorIlic, Gvozden
dc.date.accessioned2018-03-01T23:34:37Z
dc.date.available2018-03-01T23:34:37Z
dc.date.issued2013
dc.identifier.issn1110-662X (print)
dc.identifier.issn1687-529X (electronic)
dc.identifier.urihttp://vinar.vin.bg.ac.rs/handle/123456789/5602
dc.description.abstractInvestigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of Co-60 in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper.en
dc.relationinfo:eu-repo/grantAgreement/MESTD/Basic Research (BR or ON)/177007/RS//
dc.rightsopenAccessen
dc.sourceInternational Journal of Photoenergyen
dc.titleSensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiationen
dc.typearticleen
dcterms.abstractКовацевић Милојко; Илиц, Гвозден; Рајовиц, Зоран; Пејовиц, Милиц; Цирај-Бјелац Оливера;
dc.identifier.wos000322343300001
dc.identifier.doi10.1155/2013/158403
dc.citation.otherArticle Number: 158403
dc.identifier.scopus2-s2.0-84880903878
dc.identifier.fulltexthttp://vinar.vin.bg.ac.rs//bitstream/id/13468/5598.pdf


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