Characteristics of a pMOSFET suitable for use in radiotherapy
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The paper describes dose response and signal fading of Al-gate p-channel (metal oxide semiconductor field effect transistors) MOSFETs in the range of gamma radiation doses used in radiation therapy. MOSFETs with thicknesses of the gate oxide layer of 1 mu m and 400 nm were used. The response was characterized by the threshold voltage shift and was studied as a function of the absorbed dose and time after irradiation. The dosimeters with the 1-mu m-thick oxide layer can be effectively used for measuring doses in the 0.1-5 Gy range. The dosimeters with 400-nm-thick oxide layer are suitable for measuring doses above 5 Gy. Both types of the dosimeters retain dosimetric information for long periods of time. (C) 2013 Elsevier Ltd. All rights reserved.