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dc.creatorObrenović, Marija D.
dc.creatorLazarević, Đorđe R.
dc.creatorDolicanin, Edin C.
dc.creatorVujisic, Milos Lj.
dc.date.accessioned2018-03-01T23:21:28Z
dc.date.available2018-03-01T23:21:28Z
dc.date.issued2014
dc.identifier.issn1451-3994 (print)
dc.identifier.urihttp://vinar.vin.bg.ac.rs/handle/123456789/5450
dc.description.abstractThis paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation. The presented results are actual as a high degree of integrated components miniaturization affects the memory sensitivity, while the role of memories in the solar cells management system for space flights is increasing, so that the effects of ionizing radiation may cause changes in the stored data or the physical destruction of the flash memory components.en
dc.relationinfo:eu-repo/grantAgreement/MESTD/Basic Research (BR or ON)/171007/RS//
dc.rightsopenAccessen
dc.sourceNuclear technology and radiation protectionen
dc.subjectflash memoryen
dc.subjectradiation hardnessen
dc.subjectMonte-Carlo simulationen
dc.titleEffects of Ion Beams on Flash Memory Cellsen
dc.typearticleen
dcterms.abstractЛазаревиц, Дјордје Р.; Обреновиц, Марија Д.; Вујисиц, Милос Љ.; Долицанин, Един Ц.;
dc.citation.volume29
dc.citation.issue2
dc.citation.spage116
dc.citation.epage122
dc.identifier.wos000339368400004
dc.identifier.doi10.2298/NTRP1402116O
dc.citation.rankM23
dc.identifier.scopus2-s2.0-84905218494
dc.identifier.fulltexthttp://vinar.vin.bg.ac.rs//bitstream/id/13393/5446.pdf


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