New manufacturing process for nanometric SiC
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Babić, Biljana M.Bučevac, Dušan
Radosavljević-Mihajlović, Ana S.
Došen, Anja M.
Zagorac, Jelena B.
Pantić, Jelena R.
Matović, Branko
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Nanometric beta-SiC powder was prepared by carbothermal reduction of freeze-dried gel. Initially, the gel was obtained by polycondensation of sol consisting of resorcinol and formaldehyde as a source of C and tetraethoxysilane as a source of silicon. The effect of temperature and time of heat treatment (carbothermal reduction) as well as the effect of C/Si ratio on SiC powder properties was studied. It was possible to obtain nanosized (similar to 20 nm) beta-sic powder after one-hour heat treatment at relatively low temperature of 1200 degrees C. The powder was successfully synthesised without the need for excess carbon which is typical for conventional carbotherrnal reduction using some other sources of graphite. The increase in temperature of heat treatment to 1400 degrees C caused considerable growth of SiC particles up to 400 nm. It was found that prolonged heat treatment at 1200 degrees C is an effective way to obtain well crystallized SiC and keep the size of SiC particles below ...50 nm at the same time. (C) 2011 Elsevier Ltd. All rights reserved.
Keywords:
Sol-gel processes / X-ray methods / SiCSource:
Journal of the European Ceramic Society, 2012, 32, 9, 1901-1906Funding / projects:
- Synthesis, processing and characterization of nanostructured materials for application in the field of energy, mechanical engineering, environmental protection and biomedicine (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-45012)
DOI: 10.1016/j.jeurceramsoc.2011.08.023
ISSN: 0955-2219
WoS: 000303626200007
Scopus: 2-s2.0-84859480278
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VinčaTY - JOUR AU - Babić, Biljana M. AU - Bučevac, Dušan AU - Radosavljević-Mihajlović, Ana S. AU - Došen, Anja M. AU - Zagorac, Jelena B. AU - Pantić, Jelena R. AU - Matović, Branko PY - 2012 UR - https://vinar.vin.bg.ac.rs/handle/123456789/4830 AB - Nanometric beta-SiC powder was prepared by carbothermal reduction of freeze-dried gel. Initially, the gel was obtained by polycondensation of sol consisting of resorcinol and formaldehyde as a source of C and tetraethoxysilane as a source of silicon. The effect of temperature and time of heat treatment (carbothermal reduction) as well as the effect of C/Si ratio on SiC powder properties was studied. It was possible to obtain nanosized (similar to 20 nm) beta-sic powder after one-hour heat treatment at relatively low temperature of 1200 degrees C. The powder was successfully synthesised without the need for excess carbon which is typical for conventional carbotherrnal reduction using some other sources of graphite. The increase in temperature of heat treatment to 1400 degrees C caused considerable growth of SiC particles up to 400 nm. It was found that prolonged heat treatment at 1200 degrees C is an effective way to obtain well crystallized SiC and keep the size of SiC particles below 50 nm at the same time. (C) 2011 Elsevier Ltd. All rights reserved. T2 - Journal of the European Ceramic Society T1 - New manufacturing process for nanometric SiC VL - 32 IS - 9 SP - 1901 EP - 1906 DO - 10.1016/j.jeurceramsoc.2011.08.023 ER -
@article{ author = "Babić, Biljana M. and Bučevac, Dušan and Radosavljević-Mihajlović, Ana S. and Došen, Anja M. and Zagorac, Jelena B. and Pantić, Jelena R. and Matović, Branko", year = "2012", abstract = "Nanometric beta-SiC powder was prepared by carbothermal reduction of freeze-dried gel. Initially, the gel was obtained by polycondensation of sol consisting of resorcinol and formaldehyde as a source of C and tetraethoxysilane as a source of silicon. The effect of temperature and time of heat treatment (carbothermal reduction) as well as the effect of C/Si ratio on SiC powder properties was studied. It was possible to obtain nanosized (similar to 20 nm) beta-sic powder after one-hour heat treatment at relatively low temperature of 1200 degrees C. The powder was successfully synthesised without the need for excess carbon which is typical for conventional carbotherrnal reduction using some other sources of graphite. The increase in temperature of heat treatment to 1400 degrees C caused considerable growth of SiC particles up to 400 nm. It was found that prolonged heat treatment at 1200 degrees C is an effective way to obtain well crystallized SiC and keep the size of SiC particles below 50 nm at the same time. (C) 2011 Elsevier Ltd. All rights reserved.", journal = "Journal of the European Ceramic Society", title = "New manufacturing process for nanometric SiC", volume = "32", number = "9", pages = "1901-1906", doi = "10.1016/j.jeurceramsoc.2011.08.023" }
Babić, B. M., Bučevac, D., Radosavljević-Mihajlović, A. S., Došen, A. M., Zagorac, J. B., Pantić, J. R.,& Matović, B.. (2012). New manufacturing process for nanometric SiC. in Journal of the European Ceramic Society, 32(9), 1901-1906. https://doi.org/10.1016/j.jeurceramsoc.2011.08.023
Babić BM, Bučevac D, Radosavljević-Mihajlović AS, Došen AM, Zagorac JB, Pantić JR, Matović B. New manufacturing process for nanometric SiC. in Journal of the European Ceramic Society. 2012;32(9):1901-1906. doi:10.1016/j.jeurceramsoc.2011.08.023 .
Babić, Biljana M., Bučevac, Dušan, Radosavljević-Mihajlović, Ana S., Došen, Anja M., Zagorac, Jelena B., Pantić, Jelena R., Matović, Branko, "New manufacturing process for nanometric SiC" in Journal of the European Ceramic Society, 32, no. 9 (2012):1901-1906, https://doi.org/10.1016/j.jeurceramsoc.2011.08.023 . .