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Deposition on thin SiO2 layer by reactive sputtering
(Optoelectronics and Advanced Materials - Rapid Communications, 2007)
We investigate the experimental possibilities for producing high purity stoichiometric SiO2 thin films by reactive ion beam sputtering. The layers were deposited in a UHV chamber ( base pressure 4 x 10(-9) mbar) by 1 keV ...