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The magnetic behavior of Li2MO3 (M = Mn, Ru and Ir) and Li-2(Mn1-xRux)O-3
(Physica B: Condensed Matter, 2002)
The present study summarizes magnetic and Mossbauer measurements on ceramic Li2MO3 M = Mn. Ru and Ir and the mixed Li-2(Mn1-xRux)O-3 materials which show many of the features reflecting to antiferromagnetic ordering or to ...
Non-Fermi-liquid behavior in the layered NaxCoO2
(Low Temperature Physics, 2007)
The specific heat in the temperature region from 100 mK to 360 K and in magnetic fields of 0 and 9 T and the susceptibility from 2 to 360 K and in a magnetic field of I T are measured in the layered NaxCoO2 (x=0.65, 0.70, ...
Surface modifications of TiN coatings by a pulsed TEA CO2 laser: Coating thickness effects
(Russian Journal of Physical Chemistry A, 2007)
Interactions of a transversely excited atmospheric (TEA) CO2 laser, pulse duration similar to 2 mu s (initial spike FWHM similar to 120 ns), with polycrystalline titanium nitride (TiN) coatings deposited on high-quality ...
Local structures in Pb1-xMnxTe systems
(X-Ray Spectrometry, 2007)
The semimagnetic semiconductor Pb1-xMnxTe is a good representative of IV-VI narrow-gap semiconductors, the class of materials in which phenomena like variation of the band gap with composition, negative magnetoresistance, ...
XAFS studies of nickel-doped lead telluride
(Physica B: Condensed Matter, 2009)
The problem of impurities and defect states in lead telluride-based semiconductors is of crucial importance for their practical applications. X-ray absorption fine structure (XAFS) techniques are capable to address some ...
Cd1-xMnxS nanoparticles: Far-infrared phonon spectroscopy
(Materials Science Forum, 2005)
Phonon spectra of Cd1-xMnxS (x = 0; 0.01; 0.05; 0.1; 0.15; 0.3) nanoparticles (d similar to 4.5 rim) have been investigated by far-infrared reflection (FIR) (spectral range 40 - 600 cm(-1), temperature range 80-300 K) and ...
Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates
(Materials Science Forum, 2007)
We present a study of the micro-structural changes induced in Cr-N layers by irradiation with argon ions. The layers were deposited by reactive ion sputtering on (100) Si wafers, to a thickness of 240-280 nm, at different ...
Ion beam assisted deposition of TiN thin films on Si substrate
(Materials Science Forum, 2006)
In this paper we present a study of the formation of TiN thin films during the IBAD process. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incident angle, Ti evaporation rates and partial ...
Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers
(Journal of Microscopy, Oxford, 2008)
Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Arions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and ...
Nd : YAG laser interaction with titanium implant surfaces for medical applications
(Radiation Effects and Defects in Solids, 2008)
Interaction of Nd:YAG laser, operating at 1064 or 532 nm wavelengths and pulse duration of 40 picoseconds, with titanium implant has been studied. Surface damage threshold were estimated to be 0.9 and 0.6 J/cm(2) at ...