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Wake effect in interactions of fast ions with supported two-dimensional electron gas
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2010)
We study the interactions of fast charged particles with a two-dimensional electron gas supported by an insulating substrate, describing its high-frequency plasmon excitations by a two-fluid hydrodynamic model with the ...
Investigation of the projectile atomic number influence to the total sputtering yield in the keV energy region
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2008)
The non-monotonous dependence of the total sputtering yield on the projectile atomic number, which is unexpected in the frame of the Sigmund linear cascade theory, is investigated using Monte Carlo simulations (program ...
Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2001)
Energy spectra of protons channeling along the (0001) axis of several SiC polytype crystals (namely 4H, 6H, 15R, 21R) in the energy region E-p = 1.7-2.5 MeV, in the backscattering geometry, were taken and analyzed. Computer ...
Angular distributions of 7 TeV protons axially channeled through the thin bent (100) Si crystal
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2006)
We have studied theoretically angular distributions of relativistic protons axially channeled through the thin bent LT 100 GT Si crystal. The proton energy is 7 TeV, the thickness of the crystal is 1 mm, which corresponds ...
Ultrafast band-structure variations induced by fast Au ions in BeO
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2011)
Auger-electron spectra associated with Be atoms in the pure metal lattice and in an oxide have been investigated for 1.8 MeV/u Au-129(41+) ions and 2.7 keV primary electrons. The excitation and local energy transfer by ...
RBS/simulated annealing analysis of silicide formation in Fe/Si systems
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 1998)
Thin Fe films were deposited by de sputtering onto Si to thicknesses between 50 and 120 nm. This was followed by implantation of 350 keV As to doses between 5 x 10(15) and 2.5 x 10(16) cm(-2), or 300 keV Xe to doses between ...
The effect of He and swift heavy ions on nanocrystalline zirconium nitride
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2014)
Recent studies have shown that swift heavy ion irradiation may significantly modulate hydrogen and helium behaviour in some materials. This phenomenon is of considerable practical interest for ceramics in general and also ...
A novel procedure for elimination of the peak deviations in LEIS spectra influenced by the primary ion beam profile
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2006)
Quantitative surface composition analysis using low energy ion scattering (LEIS) can be obstructed by the deviations introduced by the primary beam profile and the analyzer optics. A novel procedure is presented for excluding ...
Influence of the primary ion beam profile and the energy analyzer optics to the LEIS spectra: the analytical study
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2005)
The quantitative surface composition analysis with low energy ion scattering (LEIS), which is the experimental technique with the information depth that can be restricted to the first atomic layer, is often obstructed by ...
The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)
(Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 2011)
The RADFETs (pMOS dosimeters) were irradiated by ionizing radiation from Co-60 gamma-ray source to dose of 230 Gy(Si) without gate bias, and their reproducibility and sensitivity to radiation were investigated. The completely ...