Bandgap opening in graphene induced by patterned hydrogen adsorption
Nema prikaza
Autori
Balog, RichardJorgensen, Bjarke
Nilsson, Louis
Andersen, Mie
Rienks, Emile
Bianchi, Marco
Fanetti, Mattia
Laegsgaard, Erik
Baraldi, Alessandro
Lizzit, Silvano
Šljivančanin, Željko
Besenbacher, Flemming
Hammer, Bjork
Pedersen, Thomas G.
Hofmann, Philip
Hornekaer, Liv
Članak u časopisu
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
Graphene, a single layer of graphite, has recently attracted considerable attention owing to its remarkable electronic and structural properties and its possible applications in many emerging areas such as graphene-based electronic devices(1). The charge carriers in graphene behave like massless Dirac fermions, and graphene shows ballistic charge transport, turning it into an ideal material for circuit fabrication(2,3). However, graphene lacks a bandgap around the Fermi level, which is the defining concept for semiconductor materials and essential for controlling the conductivity by electronic means. Theory predicts that a tunable bandgap may be engineered by periodic modulations of the graphene lattice(4-6), but experimental evidence for this is so far lacking. Here, we demonstrate the existence of a bandgap opening in graphene, induced by the patterned adsorption of atomic hydrogen onto the Moire superlattice positions of graphene grown on an Ir(111) substrate.
Izvor:
Nature Materials, 2010, 9, 4, 315-319Finansiranje / projekti:
- ELISA - European Light Sources Activities - Synchrotrons and Free Electron Lasers (EU-FP7-226716)
- HPAH - Hydrogen interaction with polycyclic aromatic hydrocarbons – from interstellar catalysis to hydrogen storage (EU-FP7-208344)
- The Danish Council for Independent Research, Lundbeck Foundation
DOI: 10.1038/NMAT2710
ISSN: 1476-1122
PubMed: 20228819
WoS: 000275901000019
Scopus: 2-s2.0-77949958392
Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Balog, Richard AU - Jorgensen, Bjarke AU - Nilsson, Louis AU - Andersen, Mie AU - Rienks, Emile AU - Bianchi, Marco AU - Fanetti, Mattia AU - Laegsgaard, Erik AU - Baraldi, Alessandro AU - Lizzit, Silvano AU - Šljivančanin, Željko AU - Besenbacher, Flemming AU - Hammer, Bjork AU - Pedersen, Thomas G. AU - Hofmann, Philip AU - Hornekaer, Liv PY - 2010 UR - https://vinar.vin.bg.ac.rs/handle/123456789/3937 AB - Graphene, a single layer of graphite, has recently attracted considerable attention owing to its remarkable electronic and structural properties and its possible applications in many emerging areas such as graphene-based electronic devices(1). The charge carriers in graphene behave like massless Dirac fermions, and graphene shows ballistic charge transport, turning it into an ideal material for circuit fabrication(2,3). However, graphene lacks a bandgap around the Fermi level, which is the defining concept for semiconductor materials and essential for controlling the conductivity by electronic means. Theory predicts that a tunable bandgap may be engineered by periodic modulations of the graphene lattice(4-6), but experimental evidence for this is so far lacking. Here, we demonstrate the existence of a bandgap opening in graphene, induced by the patterned adsorption of atomic hydrogen onto the Moire superlattice positions of graphene grown on an Ir(111) substrate. T2 - Nature Materials T1 - Bandgap opening in graphene induced by patterned hydrogen adsorption VL - 9 IS - 4 SP - 315 EP - 319 DO - 10.1038/NMAT2710 ER -
@article{ author = "Balog, Richard and Jorgensen, Bjarke and Nilsson, Louis and Andersen, Mie and Rienks, Emile and Bianchi, Marco and Fanetti, Mattia and Laegsgaard, Erik and Baraldi, Alessandro and Lizzit, Silvano and Šljivančanin, Željko and Besenbacher, Flemming and Hammer, Bjork and Pedersen, Thomas G. and Hofmann, Philip and Hornekaer, Liv", year = "2010", abstract = "Graphene, a single layer of graphite, has recently attracted considerable attention owing to its remarkable electronic and structural properties and its possible applications in many emerging areas such as graphene-based electronic devices(1). The charge carriers in graphene behave like massless Dirac fermions, and graphene shows ballistic charge transport, turning it into an ideal material for circuit fabrication(2,3). However, graphene lacks a bandgap around the Fermi level, which is the defining concept for semiconductor materials and essential for controlling the conductivity by electronic means. Theory predicts that a tunable bandgap may be engineered by periodic modulations of the graphene lattice(4-6), but experimental evidence for this is so far lacking. Here, we demonstrate the existence of a bandgap opening in graphene, induced by the patterned adsorption of atomic hydrogen onto the Moire superlattice positions of graphene grown on an Ir(111) substrate.", journal = "Nature Materials", title = "Bandgap opening in graphene induced by patterned hydrogen adsorption", volume = "9", number = "4", pages = "315-319", doi = "10.1038/NMAT2710" }
Balog, R., Jorgensen, B., Nilsson, L., Andersen, M., Rienks, E., Bianchi, M., Fanetti, M., Laegsgaard, E., Baraldi, A., Lizzit, S., Šljivančanin, Ž., Besenbacher, F., Hammer, B., Pedersen, T. G., Hofmann, P.,& Hornekaer, L.. (2010). Bandgap opening in graphene induced by patterned hydrogen adsorption. in Nature Materials, 9(4), 315-319. https://doi.org/10.1038/NMAT2710
Balog R, Jorgensen B, Nilsson L, Andersen M, Rienks E, Bianchi M, Fanetti M, Laegsgaard E, Baraldi A, Lizzit S, Šljivančanin Ž, Besenbacher F, Hammer B, Pedersen TG, Hofmann P, Hornekaer L. Bandgap opening in graphene induced by patterned hydrogen adsorption. in Nature Materials. 2010;9(4):315-319. doi:10.1038/NMAT2710 .
Balog, Richard, Jorgensen, Bjarke, Nilsson, Louis, Andersen, Mie, Rienks, Emile, Bianchi, Marco, Fanetti, Mattia, Laegsgaard, Erik, Baraldi, Alessandro, Lizzit, Silvano, Šljivančanin, Željko, Besenbacher, Flemming, Hammer, Bjork, Pedersen, Thomas G., Hofmann, Philip, Hornekaer, Liv, "Bandgap opening in graphene induced by patterned hydrogen adsorption" in Nature Materials, 9, no. 4 (2010):315-319, https://doi.org/10.1038/NMAT2710 . .