A study of silicon modification induced by a high intensity picosecond Nd:YAG laser, emitting at 1064 nm, is presented. It is shown that laser intensities in the range of 5 x 10(10)-0.7 x 10(12) W cm(-2) drastically modified the silicon surface. The main modifications and effects can be considered as the appearance of a crater, hydrodynamic/deposition features, plasma, etc. The highest intensity of similar to 0.7 x 10(12) W cm(-2) leads to the burning through a 500 mu m thick sample. At these intensities, the surface morphology exhibits the transpiring of the explosive boiling/phase explosion (EB) in the interaction area. The picosecond Nd:YAG laser-silicon interaction was typically accompanied by massive ejection of target material in the surrounding environment. The threshold for the explosive boiling/phase explosion (TEB) was estimated to be in the interval 1.0 x 10(10) W cm(-2) LT TEB LT = 3.8 x 10(10) W cm(-2). (C) 2007 Elsevier B.V. All rights reserved.
TY - JOUR
AU - Trtica, Milan
AU - Gaković, Biljana M.
AU - Maravić, Dubravka S.
AU - Batani, Dimitri
AU - Desai, T.
AU - Redaelli, R.
PY - 2007
UR - https://vinar.vin.bg.ac.rs/handle/123456789/3305
AB - A study of silicon modification induced by a high intensity picosecond Nd:YAG laser, emitting at 1064 nm, is presented. It is shown that laser intensities in the range of 5 x 10(10)-0.7 x 10(12) W cm(-2) drastically modified the silicon surface. The main modifications and effects can be considered as the appearance of a crater, hydrodynamic/deposition features, plasma, etc. The highest intensity of similar to 0.7 x 10(12) W cm(-2) leads to the burning through a 500 mu m thick sample. At these intensities, the surface morphology exhibits the transpiring of the explosive boiling/phase explosion (EB) in the interaction area. The picosecond Nd:YAG laser-silicon interaction was typically accompanied by massive ejection of target material in the surrounding environment. The threshold for the explosive boiling/phase explosion (TEB) was estimated to be in the interval 1.0 x 10(10) W cm(-2) LT TEB LT = 3.8 x 10(10) W cm(-2). (C) 2007 Elsevier B.V. All rights reserved.
T2 - Applied Surface Science
T1 - Surface modifications of crystalline silicon created by high intensity 1064 nm picosecond Nd : YAG laser pulses
VL - 253
IS - 24
SP - 9315
EP - 9318
DO - 10.1016/j.apsusc.2007.05.080
ER -
@article{
author = "Trtica, Milan and Gaković, Biljana M. and Maravić, Dubravka S. and Batani, Dimitri and Desai, T. and Redaelli, R.",
year = "2007",
abstract = "A study of silicon modification induced by a high intensity picosecond Nd:YAG laser, emitting at 1064 nm, is presented. It is shown that laser intensities in the range of 5 x 10(10)-0.7 x 10(12) W cm(-2) drastically modified the silicon surface. The main modifications and effects can be considered as the appearance of a crater, hydrodynamic/deposition features, plasma, etc. The highest intensity of similar to 0.7 x 10(12) W cm(-2) leads to the burning through a 500 mu m thick sample. At these intensities, the surface morphology exhibits the transpiring of the explosive boiling/phase explosion (EB) in the interaction area. The picosecond Nd:YAG laser-silicon interaction was typically accompanied by massive ejection of target material in the surrounding environment. The threshold for the explosive boiling/phase explosion (TEB) was estimated to be in the interval 1.0 x 10(10) W cm(-2) LT TEB LT = 3.8 x 10(10) W cm(-2). (C) 2007 Elsevier B.V. All rights reserved.",
journal = "Applied Surface Science",
title = "Surface modifications of crystalline silicon created by high intensity 1064 nm picosecond Nd : YAG laser pulses",
volume = "253",
number = "24",
pages = "9315-9318",
doi = "10.1016/j.apsusc.2007.05.080"
}
Trtica, M., Gaković, B. M., Maravić, D. S., Batani, D., Desai, T.,& Redaelli, R.. (2007). Surface modifications of crystalline silicon created by high intensity 1064 nm picosecond Nd : YAG laser pulses. in Applied Surface Science, 253(24), 9315-9318.
https://doi.org/10.1016/j.apsusc.2007.05.080
Trtica M, Gaković BM, Maravić DS, Batani D, Desai T, Redaelli R. Surface modifications of crystalline silicon created by high intensity 1064 nm picosecond Nd : YAG laser pulses. in Applied Surface Science. 2007;253(24):9315-9318.
doi:10.1016/j.apsusc.2007.05.080 .
Trtica, Milan, Gaković, Biljana M., Maravić, Dubravka S., Batani, Dimitri, Desai, T., Redaelli, R., "Surface modifications of crystalline silicon created by high intensity 1064 nm picosecond Nd : YAG laser pulses" in Applied Surface Science, 253, no. 24 (2007):9315-9318,
https://doi.org/10.1016/j.apsusc.2007.05.080 . .
