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dc.creatorStankovic, Koviljka
dc.creatorVujisic, Milos
dc.creatorDolicanin, Edin
dc.date.accessioned2018-03-01T20:09:00Z
dc.date.available2018-03-01T20:09:00Z
dc.date.issued2009
dc.identifier.issn1451-3994 (print)
dc.identifier.urihttp://vinar.vin.bg.ac.rs/handle/123456789/3251
dc.description.abstractThe wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.en
dc.relationMinistry of Science and Technological Development of the Republic of Serbia [141046]
dc.rightsopenAccessen
dc.sourceNuclear technology and radiation protectionen
dc.subjectdiodesen
dc.subjectnuclear radiation effectsen
dc.subjectover-voltage protectionen
dc.titleReliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiationen
dc.typearticleen
dcterms.abstractСтанковиц, Ковиљка; Вујисиц, Милос; Долицанин, Един;
dc.citation.volume24
dc.citation.issue2
dc.citation.spage132
dc.citation.epage137
dc.identifier.wos000270413200010
dc.identifier.doi10.2298/NTRP0902132S
dc.citation.rankM23
dc.identifier.scopus2-s2.0-70649096063
dc.identifier.fulltexthttp://vinar.vin.bg.ac.rs//bitstream/id/12419/3247.pdf


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