Synthesis of amorphous boron carbide by single and multiple charged boron ions bombardment of fullerene thin films
Romčević, Nebojša Ž.
Romčević, Maja J.
Marković, Zoran M.
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In this paper, results of structural modification of fullerene thin films by single and multiple charged boron ions (B+, B3+) are presented. The applied ion energies were in the range of 15-45 keV. The characterization of as-deposited and irradiated specimens has been performed by atomic force microscopy, Raman and Fourier transform infrared spectroscopy and UV/vis spectrophotometry. The results of Raman analysis have shown the formation of amorphous layer after irradiation of fullerene thin films. Fourier transform infrared spectroscopy has confirmed the formation of new B-C bonds in irradiated films at higher fluences (2 x 10(16) cm(-2)). The morphology of bombarded films has been changed significantly. The optical band gap was found to be reduced from 1.7 to 1.06 eV for irradiated films by B3+ ions and 0.7 eV for irradiated films by B+ ions. (c) 2006 Elsevier B.V. All rights reserved.