Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates

dc.creator	Bibić, Nataša M.
dc.creator	Milinović, Velimir
dc.creator	Lieb, K. P.
dc.creator	Milosavljević, Momir
dc.creator	Schrempel, F.
dc.date.accessioned	2018-03-01T20:00:20Z
dc.date.available	2018-03-01T20:00:20Z
dc.date.issued	2007
dc.identifier.issn	0003-6951
dc.identifier.uri	https://vinar.vin.bg.ac.rs/handle/123456789/3150
dc.description.abstract	Ion-beam mixing of Fe/Si bilayers, induced at room temperature by 100 keV Ar-40(+), 180 keV Kr-86(+), and 250 keV Xe-132(+) ions, was investigated. The study focuses on the influence of the preamorphization of the Si(100) substrates by 1.0 keV Ar-ion irradiation. Rutherford backscattering spectroscopy as well as scanning and transmission electron microscopies were applied for structural characterization. The mixing rate across the preamorphized Fe/Si interface was, on average, by 76% higher than that of crystalline Si. (c) 2007 American Institute of Physics.	en
dc.rights	restrictedAccess	en
dc.source	Applied Physics Letters	en
dc.title	Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates	en
dc.type	article	en
dcterms.abstract	Бибиц, Н.; Милиновиц, В.; Лиеб, К. П.; Милосављевић Момир; Сцхремпел, Ф.;
dc.citation.volume	90
dc.citation.issue	5
dc.identifier.wos	000243977300021
dc.identifier.doi	10.1063/1.2432952
dc.citation.other	Article Number: 051901
dc.citation.rank	M21a
dc.identifier.scopus	2-s2.0-33846949688

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