Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine
Abstract
In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-oxide-semiconductor field effect transistors) sensitivity to gamma and X-ray irradiation are presented. Radiation fields were created using Co-60 source for three dose ranges (0-1 Gy, 0-5 Gy, and 0-50 Gy), as well as X-ray unit of 280 kVp spectrum for a single dose range from 0 to 5 Gy. The sensitivity was characterized by the threshold voltage shift, determined from reader circuit measurements, as a function of absorbed radiation dose. It was shown that for the three dose ranges of gamma radiation, as well as for the X-ray range from 0 Gy to 5 Gy there is approximately a linear dependence between threshold voltage shift Delta V-T and radiation dose D. The application of positive bias of +5 Vat the RADFET gate during irradiation, for these ranges of gamma radiation, also for X-ray dose range, leads to the increase in Delta V-T and also, approximately a linear dependence between Delta V-T... and D, is established. Moreover, it was shown that the sensitivity of RADFET is much higher in the case of X-ray irradiation then in the case of gamma-ray irradiation for the same dose range.
Keywords:
RADFET / gamma-ray irradiation / X-ray irradiation / threshold voltage shift / radiation doseSource:
Nuclear technology and radiation protection, 2014, 29, 3, 179-185Funding / projects:
- Physical and functional effects of radiation interaction with electrotechnical and biological systems (RS-MESTD-Basic Research (BR or ON)-171007)
DOI: 10.2298/NTRP1403179P
ISSN: 1451-3994
WoS: 000343688300002
Scopus: 2-s2.0-84926677420
Collections
Institution/Community
VinčaTY - JOUR AU - Pejović, Milić M. AU - Pejović, Svetlana M. AU - Stojanov, Dragan AU - Ciraj-Bjelac, Olivera PY - 2014 UR - https://vinar.vin.bg.ac.rs/handle/123456789/252 AB - In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-oxide-semiconductor field effect transistors) sensitivity to gamma and X-ray irradiation are presented. Radiation fields were created using Co-60 source for three dose ranges (0-1 Gy, 0-5 Gy, and 0-50 Gy), as well as X-ray unit of 280 kVp spectrum for a single dose range from 0 to 5 Gy. The sensitivity was characterized by the threshold voltage shift, determined from reader circuit measurements, as a function of absorbed radiation dose. It was shown that for the three dose ranges of gamma radiation, as well as for the X-ray range from 0 Gy to 5 Gy there is approximately a linear dependence between threshold voltage shift Delta V-T and radiation dose D. The application of positive bias of +5 Vat the RADFET gate during irradiation, for these ranges of gamma radiation, also for X-ray dose range, leads to the increase in Delta V-T and also, approximately a linear dependence between Delta V-T and D, is established. Moreover, it was shown that the sensitivity of RADFET is much higher in the case of X-ray irradiation then in the case of gamma-ray irradiation for the same dose range. T2 - Nuclear technology and radiation protection T1 - Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine VL - 29 IS - 3 SP - 179 EP - 185 DO - 10.2298/NTRP1403179P ER -
@article{ author = "Pejović, Milić M. and Pejović, Svetlana M. and Stojanov, Dragan and Ciraj-Bjelac, Olivera", year = "2014", abstract = "In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-oxide-semiconductor field effect transistors) sensitivity to gamma and X-ray irradiation are presented. Radiation fields were created using Co-60 source for three dose ranges (0-1 Gy, 0-5 Gy, and 0-50 Gy), as well as X-ray unit of 280 kVp spectrum for a single dose range from 0 to 5 Gy. The sensitivity was characterized by the threshold voltage shift, determined from reader circuit measurements, as a function of absorbed radiation dose. It was shown that for the three dose ranges of gamma radiation, as well as for the X-ray range from 0 Gy to 5 Gy there is approximately a linear dependence between threshold voltage shift Delta V-T and radiation dose D. The application of positive bias of +5 Vat the RADFET gate during irradiation, for these ranges of gamma radiation, also for X-ray dose range, leads to the increase in Delta V-T and also, approximately a linear dependence between Delta V-T and D, is established. Moreover, it was shown that the sensitivity of RADFET is much higher in the case of X-ray irradiation then in the case of gamma-ray irradiation for the same dose range.", journal = "Nuclear technology and radiation protection", title = "Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine", volume = "29", number = "3", pages = "179-185", doi = "10.2298/NTRP1403179P" }
Pejović, M. M., Pejović, S. M., Stojanov, D.,& Ciraj-Bjelac, O.. (2014). Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine. in Nuclear technology and radiation protection, 29(3), 179-185. https://doi.org/10.2298/NTRP1403179P
Pejović MM, Pejović SM, Stojanov D, Ciraj-Bjelac O. Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine. in Nuclear technology and radiation protection. 2014;29(3):179-185. doi:10.2298/NTRP1403179P .
Pejović, Milić M., Pejović, Svetlana M., Stojanov, Dragan, Ciraj-Bjelac, Olivera, "Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine" in Nuclear technology and radiation protection, 29, no. 3 (2014):179-185, https://doi.org/10.2298/NTRP1403179P . .