Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers
Apstrakt
A detailed study of the formation of beta -FeSi2 films by ion-beam mixing of Fe/Si bilayers with noble gas ions is presented. Fe films of 35-50 nm deposited on Si (100) were irradiated with 80-700 keV Ar, Kr, or Xe ions in a wide temperature interval, from room temperature to 600 degreesC. The structures were analyzed by Rutherford backscattering spectroscopy, x-ray diffraction, conversion electron Mossbauer spectroscopy, elastic recoil detection analysis, cross-section high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. Already after Xe irradiation at 300 degreesC the whole Fe layer is transformed to a mixture of Fe3Si, epsilon -FeSi, and beta -FeSi2 phases. At 400-450 degreesC, a unique, layer by layer growth of beta -FeSi2 starting from the surface was found. A full transformation of 35 nm Fe on Si to a 105 nm beta -FeSi2 layer was achieved by irradiation with 205 keV Xe to 2x10(16) ions/cm(2), at a temperature of 600 degreesC. The fully ion-b...eam grown layers exhibit a pronounced surface roughness, but a sharp interface to Si. This structure is assigned to a growth of beta -FeSi2 grains in a local surrounding of interdiffused silicon. Rapid diffusion of silicon to the surface was observed during all ion irradiations. Single-phase beta -FeSi2 layers were also synthesized by vacuum annealing for 2 h at 600 degreesC of 35 nm Fe/Si bilayers premixed with Xe at 450 degreesC. In this case, the layers form with a smoother surface topography. It is concluded that ion-beam mixing can be used successfully for growth of beta -FeSi2 layers at moderate temperatures, either directly or combined with postirradiation annealing. (C) 2001 American Institute of Physics.
Izvor:
Journal of Applied Physics, 2001, 90, 9, 4474-4484
DOI: 10.1063/1.1405818
ISSN: 0021-8979
WoS: 000171594800024
Scopus: 2-s2.0-0035504393
Kolekcije
Institucija/grupa
VinčaTY - JOUR AU - Milosavljević, Momir AU - Dhar, S AU - Schaaf, P AU - Bibić, Nataša M. AU - Huang, YL AU - Seibt, M AU - Lieb, KP PY - 2001 UR - https://vinar.vin.bg.ac.rs/handle/123456789/2470 AB - A detailed study of the formation of beta -FeSi2 films by ion-beam mixing of Fe/Si bilayers with noble gas ions is presented. Fe films of 35-50 nm deposited on Si (100) were irradiated with 80-700 keV Ar, Kr, or Xe ions in a wide temperature interval, from room temperature to 600 degreesC. The structures were analyzed by Rutherford backscattering spectroscopy, x-ray diffraction, conversion electron Mossbauer spectroscopy, elastic recoil detection analysis, cross-section high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. Already after Xe irradiation at 300 degreesC the whole Fe layer is transformed to a mixture of Fe3Si, epsilon -FeSi, and beta -FeSi2 phases. At 400-450 degreesC, a unique, layer by layer growth of beta -FeSi2 starting from the surface was found. A full transformation of 35 nm Fe on Si to a 105 nm beta -FeSi2 layer was achieved by irradiation with 205 keV Xe to 2x10(16) ions/cm(2), at a temperature of 600 degreesC. The fully ion-beam grown layers exhibit a pronounced surface roughness, but a sharp interface to Si. This structure is assigned to a growth of beta -FeSi2 grains in a local surrounding of interdiffused silicon. Rapid diffusion of silicon to the surface was observed during all ion irradiations. Single-phase beta -FeSi2 layers were also synthesized by vacuum annealing for 2 h at 600 degreesC of 35 nm Fe/Si bilayers premixed with Xe at 450 degreesC. In this case, the layers form with a smoother surface topography. It is concluded that ion-beam mixing can be used successfully for growth of beta -FeSi2 layers at moderate temperatures, either directly or combined with postirradiation annealing. (C) 2001 American Institute of Physics. T2 - Journal of Applied Physics T1 - Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers VL - 90 IS - 9 SP - 4474 EP - 4484 DO - 10.1063/1.1405818 ER -
@article{ author = "Milosavljević, Momir and Dhar, S and Schaaf, P and Bibić, Nataša M. and Huang, YL and Seibt, M and Lieb, KP", year = "2001", abstract = "A detailed study of the formation of beta -FeSi2 films by ion-beam mixing of Fe/Si bilayers with noble gas ions is presented. Fe films of 35-50 nm deposited on Si (100) were irradiated with 80-700 keV Ar, Kr, or Xe ions in a wide temperature interval, from room temperature to 600 degreesC. The structures were analyzed by Rutherford backscattering spectroscopy, x-ray diffraction, conversion electron Mossbauer spectroscopy, elastic recoil detection analysis, cross-section high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. Already after Xe irradiation at 300 degreesC the whole Fe layer is transformed to a mixture of Fe3Si, epsilon -FeSi, and beta -FeSi2 phases. At 400-450 degreesC, a unique, layer by layer growth of beta -FeSi2 starting from the surface was found. A full transformation of 35 nm Fe on Si to a 105 nm beta -FeSi2 layer was achieved by irradiation with 205 keV Xe to 2x10(16) ions/cm(2), at a temperature of 600 degreesC. The fully ion-beam grown layers exhibit a pronounced surface roughness, but a sharp interface to Si. This structure is assigned to a growth of beta -FeSi2 grains in a local surrounding of interdiffused silicon. Rapid diffusion of silicon to the surface was observed during all ion irradiations. Single-phase beta -FeSi2 layers were also synthesized by vacuum annealing for 2 h at 600 degreesC of 35 nm Fe/Si bilayers premixed with Xe at 450 degreesC. In this case, the layers form with a smoother surface topography. It is concluded that ion-beam mixing can be used successfully for growth of beta -FeSi2 layers at moderate temperatures, either directly or combined with postirradiation annealing. (C) 2001 American Institute of Physics.", journal = "Journal of Applied Physics", title = "Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers", volume = "90", number = "9", pages = "4474-4484", doi = "10.1063/1.1405818" }
Milosavljević, M., Dhar, S., Schaaf, P., Bibić, N. M., Huang, Y., Seibt, M.,& Lieb, K.. (2001). Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers. in Journal of Applied Physics, 90(9), 4474-4484. https://doi.org/10.1063/1.1405818
Milosavljević M, Dhar S, Schaaf P, Bibić NM, Huang Y, Seibt M, Lieb K. Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers. in Journal of Applied Physics. 2001;90(9):4474-4484. doi:10.1063/1.1405818 .
Milosavljević, Momir, Dhar, S, Schaaf, P, Bibić, Nataša M., Huang, YL, Seibt, M, Lieb, KP, "Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers" in Journal of Applied Physics, 90, no. 9 (2001):4474-4484, https://doi.org/10.1063/1.1405818 . .