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Amorphous-iron disilicide: A promising semiconductor
dc.creator | Milosavljević, Momir | |
dc.creator | Shao, G | |
dc.creator | Bibić, Nataša M. | |
dc.creator | McKinty, CN | |
dc.creator | Jeynes, C | |
dc.creator | Homewood, Kevin P. | |
dc.date.accessioned | 2018-03-01T19:00:24Z | |
dc.date.available | 2018-03-01T19:00:24Z | |
dc.date.issued | 2001 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | https://vinar.vin.bg.ac.rs/handle/123456789/2453 | |
dc.description.abstract | We report here the synthesis and the measurements of the microstructural and optical properties of a promising semiconductor, amorphous-iron disilicide. The material was obtained by ion-beam mixing of Fe layers on Si, with Ar8+ ions, at 300 degreesC. Optical absorption measurements indicate a semiconductor with a direct band gap of 0.88 eV. The significance of this discovery is that it demonstrates the existence of such a material. It should be possible to synthesize by other techniques and could be applied in large-area electronics. (C) 2001 American Institute of Physics. | en |
dc.rights | restrictedAccess | en |
dc.source | Applied Physics Letters | en |
dc.title | Amorphous-iron disilicide: A promising semiconductor | en |
dc.type | article | en |
dcterms.abstract | МцКинтy, ЦН; Јеyнес, Ц; Хомеwоод, КП; Милосављевић Момир; Бибиц, Н; Схао, Г; | |
dc.citation.volume | 79 | |
dc.citation.issue | 10 | |
dc.citation.spage | 1438 | |
dc.citation.epage | 1440 | |
dc.identifier.wos | 000170647200010 | |
dc.identifier.doi | 10.1063/1.1400760 | |
dc.citation.rank | M21a | |
dc.identifier.scopus | 2-s2.0-0346606835 |
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