Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe+ ions to fluences of (0.5-2) x 10(16) ions/cm(2) at temperatures between room temperature and 400 degreesC. By means of Rutherford Backscattering Spectrometry, the interface mixing and tantalum silicide formation were monitored as function of the ion fluence. TaSi2 phase formation was verified using X-ray diffraction. The interface broadening variance was found to depend linearly on the ion fluence and was explained with the help of a compound formation model involving global thermal spikes.
Source:
Physica Status Solidi. B: Basic Research, 2000, 222, 1, 295-302
TY - JOUR
AU - Dhar, S
AU - Milosavljević, Momir
AU - Bibić, Nataša M.
AU - Lieb, KP
PY - 2000
UR - https://vinar.vin.bg.ac.rs/handle/123456789/2396
AB - Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe+ ions to fluences of (0.5-2) x 10(16) ions/cm(2) at temperatures between room temperature and 400 degreesC. By means of Rutherford Backscattering Spectrometry, the interface mixing and tantalum silicide formation were monitored as function of the ion fluence. TaSi2 phase formation was verified using X-ray diffraction. The interface broadening variance was found to depend linearly on the ion fluence and was explained with the help of a compound formation model involving global thermal spikes.
T2 - Physica Status Solidi. B: Basic Research
T1 - Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers
VL - 222
IS - 1
SP - 295
EP - 302
DO - 10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5
ER -
@article{
author = "Dhar, S and Milosavljević, Momir and Bibić, Nataša M. and Lieb, KP",
year = "2000",
abstract = "Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe+ ions to fluences of (0.5-2) x 10(16) ions/cm(2) at temperatures between room temperature and 400 degreesC. By means of Rutherford Backscattering Spectrometry, the interface mixing and tantalum silicide formation were monitored as function of the ion fluence. TaSi2 phase formation was verified using X-ray diffraction. The interface broadening variance was found to depend linearly on the ion fluence and was explained with the help of a compound formation model involving global thermal spikes.",
journal = "Physica Status Solidi. B: Basic Research",
title = "Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers",
volume = "222",
number = "1",
pages = "295-302",
doi = "10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5"
}
Dhar, S., Milosavljević, M., Bibić, N. M.,& Lieb, K.. (2000). Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers. in Physica Status Solidi. B: Basic Research, 222(1), 295-302.
https://doi.org/10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5
Dhar S, Milosavljević M, Bibić NM, Lieb K. Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers. in Physica Status Solidi. B: Basic Research. 2000;222(1):295-302.
doi:10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5 .
Dhar, S, Milosavljević, Momir, Bibić, Nataša M., Lieb, KP, "Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers" in Physica Status Solidi. B: Basic Research, 222, no. 1 (2000):295-302,
https://doi.org/10.1002/1521-3951(200011)222:1 LT 295::AID-PSSB295 GT 3.3.CO;2-5 . .
