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Far-infrared study of impurity local modes in gallium-doped PbTe

dc.creatorRomčević, Nebojša Ž.
dc.creatorRomčević, Maja J.
dc.creatorKhokhlov, DR
dc.creatorBelogorokhov, AI
dc.creatorIvanchik, II
dc.creatorKonig, W
dc.date.accessioned2018-03-01T18:46:44Z
dc.date.available2018-03-01T18:46:44Z
dc.date.issued1999
dc.identifier.issn1350-4495
dc.identifier.urihttps://vinar.vin.bg.ac.rs/handle/123456789/2296
dc.description.abstractWe present far-infrared reflection spectra and results of galvanomagnetic measurements of PbTe single crystals doped with gallium between 10 and 300 K. The analysis of the far-infrared reflection spectra was made by a fitting procedure based on the model of coupled oscillators. Together with the strong plasmon-phonon coupling we obtain three local modes of gallium at about 122, 166 and 192 cm(-1). The position of these modes depends of impurity center charge, and their intensity depends of temperature and of gallium concentration. Persistent photoconductivity effect was registered in the sample with 0.4 at.% Ga by galvanomagnetic and far-infrared measurements. (C) 1999 Elsevier Science B.V. All rights reserved.en
dc.rightsrestrictedAccessen
dc.sourceInfrared Physics and Technologyen
dc.subjectphotoconductivityen
dc.subjectimpurityen
dc.subjectPbTeen
dc.titleFar-infrared study of impurity local modes in gallium-doped PbTeen
dc.typearticleen
dcterms.abstractРомцевиц, Н; Ромевиц, М; Кхокхлов, ДР; Белогорокхов, AИ; Иванцхик, ИИ; Кониг, W;
dc.citation.volume40
dc.citation.issue6
dc.citation.spage453
dc.citation.epage462
dc.identifier.wos000083868600003
dc.identifier.doi10.1016/S1350-4495(99)00035-3
dc.citation.rankM21
dc.identifier.scopus2-s2.0-0343526427


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