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dc.creatorLalić, Milan V.
dc.creatorPopović, Zoran S.
dc.creatorVukajlović, Filip R.
dc.date.accessioned2018-03-01T18:35:50Z
dc.date.available2018-03-01T18:35:50Z
dc.date.issued1998
dc.identifier.issn1012-0394
dc.identifier.urihttps://vinar.vin.bg.ac.rs/handle/123456789/2173
dc.description.abstractIn this paper we suggest a new scheme for obtaining the electronic contribution to the electric field gradient (EFG) at the nucleus. The EFG for all hcp metals from Be to Cd is obtained from band structure calculations using the recently developed scheme of full-potential (FP) linear-muffin-tin-orbital (LMTO) formalism in the atomic-sphere approximation (ASA). A comparison with the most accurate full-potential (FP) linear augmented plane wave (LAPW) calculations and experimental values shows very good agreement. According to the investigations presented in this paper, the FP-LMTO-ASA method is probably the best choice presently for the calculation of the EFG in more complicated compounds.en
dc.rightsrestrictedAccessen
dc.sourceSolid State Phenomenaen
dc.subjectelectronic structureen
dc.subjecthyperfine interactionsen
dc.titleCalculations of the electric field gradient in hcp metals using the full-potential linear-muffin-tin orbital methoden
dc.typearticleen
dc.rights.licenseARR
dcterms.abstractПоповиц, ЗС; Вукајловиц, ФР; Лалић Милан В.;
dc.citation.volume61-2
dc.citation.spage143
dc.citation.epage146
dc.identifier.wos000075589100024
dc.identifier.doi10.4028/www.scientific.net/SSP.61-62.143
dc.type.versionpublishedVersion
dc.identifier.scopus2-s2.0-0031639283


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Приказ основних података о документу