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dc.creatorJevtic, MM
dc.creatorLazovic, MV
dc.date.accessioned2018-03-01T18:21:04Z
dc.date.available2018-03-01T18:21:04Z
dc.date.issued1997
dc.identifier.issn0038-1101 (print)
dc.identifier.urihttp://vinar.vin.bg.ac.rs/handle/123456789/2077
dc.description.abstractA method for analysis of defects close to a metallurgical junction in the space charge region of a reverse biased degraded p-n junction by low-frequency current noise and current-voltage measurements at room temperature is given. The current g-r noise spectrum (separated from the total low-frequency noise spectrum) and the current-voltage characteristics are used to calculate defect parameters like defect density, energy level, capture coefficients and defect region boundary by fitting the theoretical and experimental results in a self-consistent way. This procedure is used to analyse the defects in a silicon field plated PIN photodiode with a soft current-voltage characteristic. II is found that the defects which are responsible for the soft current-voltage characteristics and low-frequency excess g-r noise are distributed up to a distance of 3 mu m from the metallurgical junction. (C) 1997 Elsevier Science Ltd.en
dc.rightsrestrictedAccessen
dc.sourceSolid-state Electronicsen
dc.titleSelf consistent fitting method for defect analysis by low-frequency noise measurements in reverse biased p-n junctionsen
dc.typearticleen
dcterms.abstractЈевтиц, ММ; Лазовиц, МВ;
dc.citation.volume41
dc.citation.issue8
dc.citation.spage1127
dc.citation.epage1131
dc.identifier.wosA1997XM75200011
dc.identifier.doi10.1016/S0038-1101(97)00058-0
dc.identifier.scopus2-s2.0-0031210490


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