Influence of electromagnetic pollution of the electron beam generator and high-energy radioactive source on the memory components

Abstract

The study con sid ers the im pact of the en vi ron men tal con tam i na tion by the elec tro mag netic ra di a tion of elec tron beam gen er a tor and high-en ergy ra dio ac tive source on the mem ory com - po nents. Electron beam gen er a tor can be used for in jecting parti cle en ergy into the plasma of the fusion sys tem based on a Marx gener a tor, while ra dio ac tive source as a sim u la tor of high-en ergy ion iz ing ra di a tion that can be caused by the neu tron-in duced ac ti va tion of plasma sur round ing struc tures or re leased from deu te rium-tri tium fu sion re ac tion. The ef - fects of gamma ra di a tion of high-en ergy radio ac tive source and elec tric field of the electron beam gen er a tor on EPROM and EEPROM semi con ductor com puter mem ory, were in ves ti - gated. An older mem ory types were de lib er ately cho sen for the rea son that their more ro bust con struc tion will better pro tect them from the ef fects of ioniz ing and non-ion iz ing ra di a tion. The re sults ob tained un der well-con trolled condi tions show a high de gree of non-re sis tance of the semi con duc tor tech nol ogy to the ex pected elec tro mag netic pol lu tion of the elec tron beam gen er a tor and high-en ergy radio ac tive source. This con clu sion raises doubts on the pos - si bil ity of si mul ta neous ap pli ca tion of elec tron beam gen er a tor, con se quently fu sion sys tem and nanotechnologies with the in creas ing need for min ia turiza tion of electronic com po nents