Transmission pulse photoacoustic response of thin semiconductor plate

Abstract

In modern high-speed semiconductor electronics, there is a high-rate heating of components that is affected by very fast relaxation processes. The relaxation times of these processes should be known for thermal management of these devices. For almost half a century, photoacoustic techniques have been successfully developed and used to investigate physical semiconductor properties. In order to enable observation of fast relaxation processes, the model of pulse photoacoustic signal is proposed that includes influence of thermal relaxations. It is shown that these processes can be observed in a thin semiconductor layer by choosing the frequency of short pulse train and their duty cycle.