Commercial P-Channel Power VDMOSFET as X-ray Dosimeter
Authors
Ristić, Goran S.
Ilić, Stefan

Veljković, Sandra
Jevtić, Aleksandar S.
Dimitrijević, Strahinja
Palma, Alberto J.

Stanković, Srboljub J.

Anđelković, Marko S.

Article (Published version)
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The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.
Keywords:
fading / irradiation / sensitivity / VDMOSFETs / X-raySource:
Electronics, 2022, 11, 6, 918-Funding / projects:
- ELICSIR - Enhancement of Sceintific Excellence and Innovation Potential in Electronic Instrumentation for Ionising Radiation Environments (EU-857558)
- Joint research of measurements and effects of ionizing and UV radiation in medicine and environmental protection (RS-43011)
DOI: 10.3390/electronics11060918
ISSN: 2079-9292
WoS: 000776823800001
Scopus: 2-s2.0-85128460877
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VinčaTY - JOUR AU - Ristić, Goran S. AU - Ilić, Stefan AU - Veljković, Sandra AU - Jevtić, Aleksandar S. AU - Dimitrijević, Strahinja AU - Palma, Alberto J. AU - Stanković, Srboljub J. AU - Anđelković, Marko S. PY - 2022 UR - https://vinar.vin.bg.ac.rs/handle/123456789/10240 AB - The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered. T2 - Electronics T1 - Commercial P-Channel Power VDMOSFET as X-ray Dosimeter VL - 11 IS - 6 SP - 918 DO - 10.3390/electronics11060918 ER -
@article{ author = "Ristić, Goran S. and Ilić, Stefan and Veljković, Sandra and Jevtić, Aleksandar S. and Dimitrijević, Strahinja and Palma, Alberto J. and Stanković, Srboljub J. and Anđelković, Marko S.", year = "2022", abstract = "The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.", journal = "Electronics", title = "Commercial P-Channel Power VDMOSFET as X-ray Dosimeter", volume = "11", number = "6", pages = "918", doi = "10.3390/electronics11060918" }
Ristić, G. S., Ilić, S., Veljković, S., Jevtić, A. S., Dimitrijević, S., Palma, A. J., Stanković, S. J.,& Anđelković, M. S.. (2022). Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. in Electronics, 11(6), 918. https://doi.org/10.3390/electronics11060918
Ristić GS, Ilić S, Veljković S, Jevtić AS, Dimitrijević S, Palma AJ, Stanković SJ, Anđelković MS. Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. in Electronics. 2022;11(6):918. doi:10.3390/electronics11060918 .
Ristić, Goran S., Ilić, Stefan, Veljković, Sandra, Jevtić, Aleksandar S., Dimitrijević, Strahinja, Palma, Alberto J., Stanković, Srboljub J., Anđelković, Marko S., "Commercial P-Channel Power VDMOSFET as X-ray Dosimeter" in Electronics, 11, no. 6 (2022):918, https://doi.org/10.3390/electronics11060918 . .