Recharging process of commercial floating-gate MOS transistor in dosimetry application
Authors
Ilić, Stefan
Anđelković, Marko S.

Duane, Russell
Palma, Alberto J.

Sarajlić, Milija
Stanković, Srboljub J.

Ristić, Goran S.

Article (Published version)
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We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.
Keywords:
Floating gate / Radiation sensor / EPAD / Recharging / Programming cell / Non-volatile memorySource:
Microelectronics Reliability, 2021, 126, 114322-Funding / projects:
- WIDESPREAD-2018-3-TWINNING
- Joint research of measurements and effects of ionizing and UV radiation in medicine and environmental protection (RS-43011)
- Ministry of Education, Science and Technological Development, Republic of Serbia, Grant no. 200026 (University of Belgrade, Institute of Chemistry, Technology and Metallurgy - IChTM) (RS-200026)
- ELICSIR - Enhancement of Sceintific Excellence and Innovation Potential in Electronic Instrumentation for Ionising Radiation Environments (EU-857558)
DOI: 10.1016/j.microrel.2021.114322
ISSN: 0026-2714
WoS: 000733412800004
Scopus: 2-s2.0-85120850474
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VinčaTY - JOUR AU - Ilić, Stefan AU - Anđelković, Marko S. AU - Duane, Russell AU - Palma, Alberto J. AU - Sarajlić, Milija AU - Stanković, Srboljub J. AU - Ristić, Goran S. PY - 2021 UR - https://vinar.vin.bg.ac.rs/handle/123456789/10081 AB - We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes. T2 - Microelectronics Reliability T1 - Recharging process of commercial floating-gate MOS transistor in dosimetry application VL - 126 SP - 114322 DO - 10.1016/j.microrel.2021.114322 ER -
@article{ author = "Ilić, Stefan and Anđelković, Marko S. and Duane, Russell and Palma, Alberto J. and Sarajlić, Milija and Stanković, Srboljub J. and Ristić, Goran S.", year = "2021", abstract = "We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.", journal = "Microelectronics Reliability", title = "Recharging process of commercial floating-gate MOS transistor in dosimetry application", volume = "126", pages = "114322", doi = "10.1016/j.microrel.2021.114322" }
Ilić, S., Anđelković, M. S., Duane, R., Palma, A. J., Sarajlić, M., Stanković, S. J.,& Ristić, G. S.. (2021). Recharging process of commercial floating-gate MOS transistor in dosimetry application. in Microelectronics Reliability, 126, 114322. https://doi.org/10.1016/j.microrel.2021.114322
Ilić S, Anđelković MS, Duane R, Palma AJ, Sarajlić M, Stanković SJ, Ristić GS. Recharging process of commercial floating-gate MOS transistor in dosimetry application. in Microelectronics Reliability. 2021;126:114322. doi:10.1016/j.microrel.2021.114322 .
Ilić, Stefan, Anđelković, Marko S., Duane, Russell, Palma, Alberto J., Sarajlić, Milija, Stanković, Srboljub J., Ristić, Goran S., "Recharging process of commercial floating-gate MOS transistor in dosimetry application" in Microelectronics Reliability, 126 (2021):114322, https://doi.org/10.1016/j.microrel.2021.114322 . .