TY  - JOUR
AU  - Obradović, Marko O.
AU  - Pjević, Dejan J.
AU  - Peruško, Davor
AU  - Grce, Ana
AU  - Milosavljević, Momir
AU  - Homewood, Kevin P.
AU  - Siketic, Z.
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7078
AB  - The effects of helium ion irradiation on immiscible AlN/TiN multilayered system were studied. The structure consisted of 30 alternate AlN (similar to 8 nm) and TiN (similar to 9.3 nm) layers of a total thickness around 260 nm, deposited on (100) Si substrates by reactive sputtering. The system was then implanted with 30 keV He+ to very high irradiation doses, 1-4 x 10(17) ions/cm(2). Evaluated projected ion range was 153.1 +/- 45.4 nm and maximum displacements per atom for the applied doses from 6 to 24. It was found that the multilayers remained well separated and stable after irradiation to 1 x 10(17) ions/cm(2), which introduces up to 10 at.% of He within the structure. The main effects were agglomeration of He bubbles around the projected ion range, mostly concentrated at the AlN edges of the interfaces, and a slight increase of the mean grain size within the affected zone. Increasing of the ion dose induced further agglomeration of bubbles, splitting of the layers at the interfaces, and final destruction of the structure. The evaluated He content was consistent with the implanted dose up to 2 x 10(17) ions/cm(2). For the highest dose the implanted gas is partially released from the structure. The results can be interesting towards the development of radiation tolerant materials. (C) 2015 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system
VL  - 591
SP  - 164
EP  - 168
DO  - 10.1016/j.tsf.2015.03.074
ER  - 

@article{
author = "Obradović, Marko O. and Pjević, Dejan J. and Peruško, Davor and Grce, Ana and Milosavljević, Momir and Homewood, Kevin P. and Siketic, Z.",
year = "2015",
abstract = "The effects of helium ion irradiation on immiscible AlN/TiN multilayered system were studied. The structure consisted of 30 alternate AlN (similar to 8 nm) and TiN (similar to 9.3 nm) layers of a total thickness around 260 nm, deposited on (100) Si substrates by reactive sputtering. The system was then implanted with 30 keV He+ to very high irradiation doses, 1-4 x 10(17) ions/cm(2). Evaluated projected ion range was 153.1 +/- 45.4 nm and maximum displacements per atom for the applied doses from 6 to 24. It was found that the multilayers remained well separated and stable after irradiation to 1 x 10(17) ions/cm(2), which introduces up to 10 at.% of He within the structure. The main effects were agglomeration of He bubbles around the projected ion range, mostly concentrated at the AlN edges of the interfaces, and a slight increase of the mean grain size within the affected zone. Increasing of the ion dose induced further agglomeration of bubbles, splitting of the layers at the interfaces, and final destruction of the structure. The evaluated He content was consistent with the implanted dose up to 2 x 10(17) ions/cm(2). For the highest dose the implanted gas is partially released from the structure. The results can be interesting towards the development of radiation tolerant materials. (C) 2015 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system",
volume = "591",
pages = "164-168",
doi = "10.1016/j.tsf.2015.03.074"
}

Obradović, M. O., Pjević, D. J., Peruško, D., Grce, A., Milosavljević, M., Homewood, K. P.,& Siketic, Z.. (2015). Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system. in Thin Solid Films, 591, 164-168.
https://doi.org/10.1016/j.tsf.2015.03.074

Obradović MO, Pjević DJ, Peruško D, Grce A, Milosavljević M, Homewood KP, Siketic Z. Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system. in Thin Solid Films. 2015;591:164-168.
doi:10.1016/j.tsf.2015.03.074 .

Obradović, Marko O., Pjević, Dejan J., Peruško, Davor, Grce, Ana, Milosavljević, Momir, Homewood, Kevin P., Siketic, Z., "Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system" in Thin Solid Films, 591 (2015):164-168,
https://doi.org/10.1016/j.tsf.2015.03.074 . .

TY  - JOUR
AU  - Kopsalis, Ioannis
AU  - Paneta, Valentina
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Erich, Marko
AU  - Petrović, Srđan M.
AU  - Fazinić, Stjepko
AU  - Tadić, Tonči
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/158
AB  - The effect of ion implantation (4MeV(12)C(2+), 5MeV(16)O(2+), and 8MeV(28)Si(2+)) on [110] silicon wafers in channeling and random orientation is investigated by micro-Raman spectroscopy. The profiles were measured using Scanning Electron Microscope (SEM) showing that the ions were penetrating deeper inside the wafer in the channeling case creating a 1-2 mu m wide strongly modified region and agreeing with the d-nuclear reaction analysis measurements. Micro-Raman spectroscopy was employed for the assessment of the lattice damage, probing the side surface of the cleaved wafers at submicron step. The phonon modifications show strong lattice distortions in zones parallel to the front surface of the wafers and at depths, which agree with the results of the characterization techniques. In these strongly damaged zones, there is a substantial reduction in the phonon intensity, a small shift in wavenumber position, and a large increase in the phonon width. On the basis of a modification of the phonon confinement model that takes under consideration the laser beam profile, the reduction in intensity of scattered light, and the nanocrystallite size distribution from the simulation of the lattice displacements, the main characteristics of the Raman spectra could be reproduced for the random C and O implantations. The results indicate that at a critical doping level, the induced defects and lattice distortions relax by breaking the silicon single crystal into nanocrystallites, thus creating the observed zones of strongly distorted lattice.
T2  - Journal of Raman Spectroscopy
T1  - Probing high-energy ion-implanted silicon by micro-Raman spectroscopy
VL  - 45
IS  - 8
SP  - 650
EP  - 656
DO  - 10.1002/jrs.4507
ER  - 

@article{
author = "Kopsalis, Ioannis and Paneta, Valentina and Kokkoris, Michael and Liarokapis, Efthymios and Erich, Marko and Petrović, Srđan M. and Fazinić, Stjepko and Tadić, Tonči",
year = "2014",
abstract = "The effect of ion implantation (4MeV(12)C(2+), 5MeV(16)O(2+), and 8MeV(28)Si(2+)) on [110] silicon wafers in channeling and random orientation is investigated by micro-Raman spectroscopy. The profiles were measured using Scanning Electron Microscope (SEM) showing that the ions were penetrating deeper inside the wafer in the channeling case creating a 1-2 mu m wide strongly modified region and agreeing with the d-nuclear reaction analysis measurements. Micro-Raman spectroscopy was employed for the assessment of the lattice damage, probing the side surface of the cleaved wafers at submicron step. The phonon modifications show strong lattice distortions in zones parallel to the front surface of the wafers and at depths, which agree with the results of the characterization techniques. In these strongly damaged zones, there is a substantial reduction in the phonon intensity, a small shift in wavenumber position, and a large increase in the phonon width. On the basis of a modification of the phonon confinement model that takes under consideration the laser beam profile, the reduction in intensity of scattered light, and the nanocrystallite size distribution from the simulation of the lattice displacements, the main characteristics of the Raman spectra could be reproduced for the random C and O implantations. The results indicate that at a critical doping level, the induced defects and lattice distortions relax by breaking the silicon single crystal into nanocrystallites, thus creating the observed zones of strongly distorted lattice.",
journal = "Journal of Raman Spectroscopy",
title = "Probing high-energy ion-implanted silicon by micro-Raman spectroscopy",
volume = "45",
number = "8",
pages = "650-656",
doi = "10.1002/jrs.4507"
}

Kopsalis, I., Paneta, V., Kokkoris, M., Liarokapis, E., Erich, M., Petrović, S. M., Fazinić, S.,& Tadić, T.. (2014). Probing high-energy ion-implanted silicon by micro-Raman spectroscopy. in Journal of Raman Spectroscopy, 45(8), 650-656.
https://doi.org/10.1002/jrs.4507

Kopsalis I, Paneta V, Kokkoris M, Liarokapis E, Erich M, Petrović SM, Fazinić S, Tadić T. Probing high-energy ion-implanted silicon by micro-Raman spectroscopy. in Journal of Raman Spectroscopy. 2014;45(8):650-656.
doi:10.1002/jrs.4507 .

Kopsalis, Ioannis, Paneta, Valentina, Kokkoris, Michael, Liarokapis, Efthymios, Erich, Marko, Petrović, Srđan M., Fazinić, Stjepko, Tadić, Tonči, "Probing high-energy ion-implanted silicon by micro-Raman spectroscopy" in Journal of Raman Spectroscopy, 45, no. 8 (2014):650-656,
https://doi.org/10.1002/jrs.4507 . .

TY  - JOUR
AU  - Paneta, Valentina
AU  - Erich, Marko
AU  - Fazinić, Stjepko
AU  - Kokkoris, Michael
AU  - Kopsalis, Ioannis
AU  - Petrović, Srđan M.
AU  - Tadić, Tonči
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5885
AB  - Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it is theoretically possible to implant ions deeper in the crystal, in comparison with the random ion beam-solid orientation, while - at the same time - minimizing the induced crystal lattice damage. In the present work, 4 MeV C-12(2+) and 5 MeV O-16(2+) ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of similar to 10(17) particles/cm(2), in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the C-12(d,p(0)) and O-16(d,p(0),alpha(0)) reactions respectively, at E-d,E-lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrometry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM
VL  - 320
SP  - 6
EP  - 11
DO  - 10.1016/j.nimb.2013.11.020
ER  - 

@article{
author = "Paneta, Valentina and Erich, Marko and Fazinić, Stjepko and Kokkoris, Michael and Kopsalis, Ioannis and Petrović, Srđan M. and Tadić, Tonči",
year = "2014",
abstract = "Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it is theoretically possible to implant ions deeper in the crystal, in comparison with the random ion beam-solid orientation, while - at the same time - minimizing the induced crystal lattice damage. In the present work, 4 MeV C-12(2+) and 5 MeV O-16(2+) ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of similar to 10(17) particles/cm(2), in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the C-12(d,p(0)) and O-16(d,p(0),alpha(0)) reactions respectively, at E-d,E-lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrometry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM",
volume = "320",
pages = "6-11",
doi = "10.1016/j.nimb.2013.11.020"
}

Paneta, V., Erich, M., Fazinić, S., Kokkoris, M., Kopsalis, I., Petrović, S. M.,& Tadić, T.. (2014). Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 320, 6-11.
https://doi.org/10.1016/j.nimb.2013.11.020

Paneta V, Erich M, Fazinić S, Kokkoris M, Kopsalis I, Petrović SM, Tadić T. Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2014;320:6-11.
doi:10.1016/j.nimb.2013.11.020 .

Paneta, Valentina, Erich, Marko, Fazinić, Stjepko, Kokkoris, Michael, Kopsalis, Ioannis, Petrović, Srđan M., Tadić, Tonči, "Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 320 (2014):6-11,
https://doi.org/10.1016/j.nimb.2013.11.020 . .

TY  - JOUR
AU  - Peruško, Davor
AU  - Cizmovic, M.
AU  - Petrović, Suzana
AU  - Siketic, Z.
AU  - Mitrić, Miodrag
AU  - Pelicon, P.
AU  - Dražić, Goran
AU  - Kovač, Janez
AU  - Milinović, Velimir
AU  - Milosavljević, Momir
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5457
AB  - Multilayered 5x(Al/Ti) structures, deposited on a Si substrate to a total thickness of 130 nm, were treated by unfocused Nd:YAG laser pulses (150 ps) with energies of 85 and 65 mJ. Irradiations were performed in air with 10, 50 and 100 successive laser pulses. Characterizations were done by using Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), x-ray diffraction (XRD) and transmission electron microscopy (TEM). The results obtained show that laser irradiation, at either energy, induced almost full intermixing of deposited layers and formation of intermetallic compounds, but this was more pronounced for the applied laser pulses with a higher energy. The intermixed layer-silicon interface remains intact for all numbers of applied laser pulses and for both energies. The formation of an oxide layer on the sample surfaces was also observed, the thickness of which is greater for the higher laser beam energy.
T2  - Laser Physics
T1  - Laser irradiation of nano-metric Al/Ti multilayers
VL  - 23
IS  - 3
DO  - 10.1088/1054-660X/23/3/036005
ER  - 

@article{
author = "Peruško, Davor and Cizmovic, M. and Petrović, Suzana and Siketic, Z. and Mitrić, Miodrag and Pelicon, P. and Dražić, Goran and Kovač, Janez and Milinović, Velimir and Milosavljević, Momir",
year = "2013",
abstract = "Multilayered 5x(Al/Ti) structures, deposited on a Si substrate to a total thickness of 130 nm, were treated by unfocused Nd:YAG laser pulses (150 ps) with energies of 85 and 65 mJ. Irradiations were performed in air with 10, 50 and 100 successive laser pulses. Characterizations were done by using Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), x-ray diffraction (XRD) and transmission electron microscopy (TEM). The results obtained show that laser irradiation, at either energy, induced almost full intermixing of deposited layers and formation of intermetallic compounds, but this was more pronounced for the applied laser pulses with a higher energy. The intermixed layer-silicon interface remains intact for all numbers of applied laser pulses and for both energies. The formation of an oxide layer on the sample surfaces was also observed, the thickness of which is greater for the higher laser beam energy.",
journal = "Laser Physics",
title = "Laser irradiation of nano-metric Al/Ti multilayers",
volume = "23",
number = "3",
doi = "10.1088/1054-660X/23/3/036005"
}

Peruško, D., Cizmovic, M., Petrović, S., Siketic, Z., Mitrić, M., Pelicon, P., Dražić, G., Kovač, J., Milinović, V.,& Milosavljević, M.. (2013). Laser irradiation of nano-metric Al/Ti multilayers. in Laser Physics, 23(3).
https://doi.org/10.1088/1054-660X/23/3/036005

Peruško D, Cizmovic M, Petrović S, Siketic Z, Mitrić M, Pelicon P, Dražić G, Kovač J, Milinović V, Milosavljević M. Laser irradiation of nano-metric Al/Ti multilayers. in Laser Physics. 2013;23(3).
doi:10.1088/1054-660X/23/3/036005 .

Peruško, Davor, Cizmovic, M., Petrović, Suzana, Siketic, Z., Mitrić, Miodrag, Pelicon, P., Dražić, Goran, Kovač, Janez, Milinović, Velimir, Milosavljević, Momir, "Laser irradiation of nano-metric Al/Ti multilayers" in Laser Physics, 23, no. 3 (2013),
https://doi.org/10.1088/1054-660X/23/3/036005 . .

TY  - JOUR
AU  - Erich, Marko
AU  - Petrović, Srđan M.
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Antonakos, Anastasios
AU  - Telečki, Igor N.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5393
AB  - In this work, we study the silicon amorphization dependence on the crystal depth induced by 6-MeV Al2+ ions implanted in the LT 110 GT and randomly oriented silicon crystal channels, which was not directly experimentally accessible in the previous similar high-energy ioncrystal implantation cases. Accordingly, the micro-Raman spectroscopy scanning measurements along the crystal transversal cross section of the ion implanted region were performed. The ion fluence was 10(17) particles/cm(2). The scanning steps were 0.2 and 0.3 mu m, for the channeling and random ion implantations, respectively. The obtained results are compared with the corresponding Rutherford backscattering spectra of 1.2-MeV protons in the random and channeling orientations measured during the channeling implantation. Additionally, scanning electron microscope picture was taken on the transversal cross section of the implanted region in the channeling implantation case. We show here that the obtained silicon amorphization maxima are in excellent agreement with the corresponding estimated maxima of the aluminum concentration in silicon. This clearly indicates that the used specific micro-Raman spectroscopy scanning technique can be successfully applied for the depth profiling of the crystal amorphization induced by high-energy ion implantation.
T2  - Journal of Raman Spectroscopy
T1  - Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation
VL  - 44
IS  - 3
SP  - 496
EP  - 500
DO  - 10.1002/jrs.4211
ER  - 

@article{
author = "Erich, Marko and Petrović, Srđan M. and Kokkoris, Michael and Liarokapis, Efthymios and Antonakos, Anastasios and Telečki, Igor N.",
year = "2013",
abstract = "In this work, we study the silicon amorphization dependence on the crystal depth induced by 6-MeV Al2+ ions implanted in the LT 110 GT and randomly oriented silicon crystal channels, which was not directly experimentally accessible in the previous similar high-energy ioncrystal implantation cases. Accordingly, the micro-Raman spectroscopy scanning measurements along the crystal transversal cross section of the ion implanted region were performed. The ion fluence was 10(17) particles/cm(2). The scanning steps were 0.2 and 0.3 mu m, for the channeling and random ion implantations, respectively. The obtained results are compared with the corresponding Rutherford backscattering spectra of 1.2-MeV protons in the random and channeling orientations measured during the channeling implantation. Additionally, scanning electron microscope picture was taken on the transversal cross section of the implanted region in the channeling implantation case. We show here that the obtained silicon amorphization maxima are in excellent agreement with the corresponding estimated maxima of the aluminum concentration in silicon. This clearly indicates that the used specific micro-Raman spectroscopy scanning technique can be successfully applied for the depth profiling of the crystal amorphization induced by high-energy ion implantation.",
journal = "Journal of Raman Spectroscopy",
title = "Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation",
volume = "44",
number = "3",
pages = "496-500",
doi = "10.1002/jrs.4211"
}

Erich, M., Petrović, S. M., Kokkoris, M., Liarokapis, E., Antonakos, A.,& Telečki, I. N.. (2013). Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation. in Journal of Raman Spectroscopy, 44(3), 496-500.
https://doi.org/10.1002/jrs.4211

Erich M, Petrović SM, Kokkoris M, Liarokapis E, Antonakos A, Telečki IN. Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation. in Journal of Raman Spectroscopy. 2013;44(3):496-500.
doi:10.1002/jrs.4211 .

Erich, Marko, Petrović, Srđan M., Kokkoris, Michael, Liarokapis, Efthymios, Antonakos, Anastasios, Telečki, Igor N., "Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation" in Journal of Raman Spectroscopy, 44, no. 3 (2013):496-500,
https://doi.org/10.1002/jrs.4211 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Obradović, Marko O.
AU  - Grce, Ana
AU  - Peruško, Davor
AU  - Pjević, Dejan J.
AU  - Kovač, Janez
AU  - Dražić, Goran
AU  - Jeynes, Chris
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7006
AB  - The effects of high dose Ar ion irradiation on immiscible AlN/TiN multilayered structures were studied. The structures with 30 alternate layers of a total thickness of similar to 260 nm were deposited by reactive sputtering on (100) Si wafers. Individual layer thickness was similar to 8 nm AlN and similar to 9.3 nm TiN. Irradiation was done with 180 keV Ar+ ions to 1x10(16)-8x10(16) ions/cm(2), with the projected range around mid-depth of the structures. It was found that the highest applied dose induced a considerable intermixing, where the growing TiN grains consume the adjacent AlN layers, transforming partly to (TiAl)N phase. Intermixing occurs due to a high contribution of collision cascades, which was not compensated in demixing by chemical driving forces. However, a multilayered structure with relatively flat surface and interfaces is still preserved, with measured nano-hardness value above the level for the as-deposited sample. The results are compared to other systems and discussed in the light of the existing ion beam mixing models. They can be interesting towards better understanding of the processes involved and to development of radiation tolerant coatings. (C) 2013 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers
VL  - 544
SP  - 562
EP  - 566
DO  - 10.1016/j.tsf.2012.12.068
ER  - 

@article{
author = "Milosavljević, Momir and Obradović, Marko O. and Grce, Ana and Peruško, Davor and Pjević, Dejan J. and Kovač, Janez and Dražić, Goran and Jeynes, Chris",
year = "2013",
abstract = "The effects of high dose Ar ion irradiation on immiscible AlN/TiN multilayered structures were studied. The structures with 30 alternate layers of a total thickness of similar to 260 nm were deposited by reactive sputtering on (100) Si wafers. Individual layer thickness was similar to 8 nm AlN and similar to 9.3 nm TiN. Irradiation was done with 180 keV Ar+ ions to 1x10(16)-8x10(16) ions/cm(2), with the projected range around mid-depth of the structures. It was found that the highest applied dose induced a considerable intermixing, where the growing TiN grains consume the adjacent AlN layers, transforming partly to (TiAl)N phase. Intermixing occurs due to a high contribution of collision cascades, which was not compensated in demixing by chemical driving forces. However, a multilayered structure with relatively flat surface and interfaces is still preserved, with measured nano-hardness value above the level for the as-deposited sample. The results are compared to other systems and discussed in the light of the existing ion beam mixing models. They can be interesting towards better understanding of the processes involved and to development of radiation tolerant coatings. (C) 2013 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers",
volume = "544",
pages = "562-566",
doi = "10.1016/j.tsf.2012.12.068"
}

Milosavljević, M., Obradović, M. O., Grce, A., Peruško, D., Pjević, D. J., Kovač, J., Dražić, G.,& Jeynes, C.. (2013). High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers. in Thin Solid Films, 544, 562-566.
https://doi.org/10.1016/j.tsf.2012.12.068

Milosavljević M, Obradović MO, Grce A, Peruško D, Pjević DJ, Kovač J, Dražić G, Jeynes C. High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers. in Thin Solid Films. 2013;544:562-566.
doi:10.1016/j.tsf.2012.12.068 .

Milosavljević, Momir, Obradović, Marko O., Grce, Ana, Peruško, Davor, Pjević, Dejan J., Kovač, Janez, Dražić, Goran, Jeynes, Chris, "High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers" in Thin Solid Films, 544 (2013):562-566,
https://doi.org/10.1016/j.tsf.2012.12.068 . .

TY  - JOUR
AU  - Petrović, Suzana
AU  - Radak, Bojan
AU  - Peruško, Davor
AU  - Pelicon, P.
AU  - Kovač, Janez
AU  - Mitrić, Miodrag
AU  - Gaković, Biljana M.
AU  - Trtica, Milan
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5187
AB  - Laser-induced alloying effects on the composition and structure of different Ni/Ti multilayer structures were studied. Thin films composed of one, five, and ten (Ni/Ti) bilayers were deposited by DC ion sputtering on (1 0 0) Si wafers. Laser irradiations were performed by 150 ps pulses of a Nd:YAG laser operating at 1064 nm. The samples were characterized by Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). At a laser fluence of 0.9 J cm(-2), interaction between Ni and Ti layers was initiated, and NiTi alloy formed in 5- and 10-bilayered samples. Progressed alloying was achieved at a laser fluence of 1.2 J cm(-2). The alloy was formed mostly within the heat affected zone (HAZ) of the sample. Surface segregation of titanium was followed by formation of a 25 nm thin TiO2 film on the surface of the multilayered structures. In addition, parallel periodic surface structures on the surfaces of the 5- and 10-bilayered samples were clearly recorded. Their period in the case of the 5-bilayered system (0.77 mu m) agrees very well with the predictions of the common theory, whereas, in the case of the 10-bilayered system, two periods of such structures are observed (1.43 mu m and 0.4 mu m), and none of them coincides with the prediction. (C) 2012 Elsevier B. V. All rights reserved.
T2  - Applied Surface Science
T1  - Laser-induced surface alloying in nanosized Ni/Ti multilayer structures
VL  - 264
SP  - 273
EP  - 279
DO  - 10.1016/j.apsusc.2012.10.012
ER  - 

@article{
author = "Petrović, Suzana and Radak, Bojan and Peruško, Davor and Pelicon, P. and Kovač, Janez and Mitrić, Miodrag and Gaković, Biljana M. and Trtica, Milan",
year = "2013",
abstract = "Laser-induced alloying effects on the composition and structure of different Ni/Ti multilayer structures were studied. Thin films composed of one, five, and ten (Ni/Ti) bilayers were deposited by DC ion sputtering on (1 0 0) Si wafers. Laser irradiations were performed by 150 ps pulses of a Nd:YAG laser operating at 1064 nm. The samples were characterized by Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). At a laser fluence of 0.9 J cm(-2), interaction between Ni and Ti layers was initiated, and NiTi alloy formed in 5- and 10-bilayered samples. Progressed alloying was achieved at a laser fluence of 1.2 J cm(-2). The alloy was formed mostly within the heat affected zone (HAZ) of the sample. Surface segregation of titanium was followed by formation of a 25 nm thin TiO2 film on the surface of the multilayered structures. In addition, parallel periodic surface structures on the surfaces of the 5- and 10-bilayered samples were clearly recorded. Their period in the case of the 5-bilayered system (0.77 mu m) agrees very well with the predictions of the common theory, whereas, in the case of the 10-bilayered system, two periods of such structures are observed (1.43 mu m and 0.4 mu m), and none of them coincides with the prediction. (C) 2012 Elsevier B. V. All rights reserved.",
journal = "Applied Surface Science",
title = "Laser-induced surface alloying in nanosized Ni/Ti multilayer structures",
volume = "264",
pages = "273-279",
doi = "10.1016/j.apsusc.2012.10.012"
}

Petrović, S., Radak, B., Peruško, D., Pelicon, P., Kovač, J., Mitrić, M., Gaković, B. M.,& Trtica, M.. (2013). Laser-induced surface alloying in nanosized Ni/Ti multilayer structures. in Applied Surface Science, 264, 273-279.
https://doi.org/10.1016/j.apsusc.2012.10.012

Petrović S, Radak B, Peruško D, Pelicon P, Kovač J, Mitrić M, Gaković BM, Trtica M. Laser-induced surface alloying in nanosized Ni/Ti multilayer structures. in Applied Surface Science. 2013;264:273-279.
doi:10.1016/j.apsusc.2012.10.012 .

Petrović, Suzana, Radak, Bojan, Peruško, Davor, Pelicon, P., Kovač, Janez, Mitrić, Miodrag, Gaković, Biljana M., Trtica, Milan, "Laser-induced surface alloying in nanosized Ni/Ti multilayer structures" in Applied Surface Science, 264 (2013):273-279,
https://doi.org/10.1016/j.apsusc.2012.10.012 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Toprek, Dragan
AU  - Obradović, Marko O.
AU  - Grce, Ana
AU  - Peruško, Davor
AU  - Dražić, Goran
AU  - Kovač, Janez
AU  - Homewood, Kevin P.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5335
AB  - The effects of Ar ion irradiation on interfacial reactions induced in Ni/Ti multilayers were investigated. Structures consisting of 10 alternate Ni (similar to 26 nm) and Ti (similar to 20 nm) layers of a total thickness similar to 230 nm were deposited by ion sputtering on Si (1 0 0) wafers. Argon irradiations were done at 180 keV, to the doses of 1-6 x 10(16) ions/cm(2), the samples being held at room temperature. The projected implanted ion range is 86 +/- 36 nm, maximum energy loss is closer to the surface, and maximum displacements per atom (dpa) from 47 to 284 for Ni and 26 to 156 for Ti. Characterizations of samples were performed by transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). It is shown that ion irradiation induced a progressed intermixing in the mostly affected zone already for the lowest dose, the thickness of the mix increasing linearly with the irradiation dose. The mixed phase is fully amorphous, starting with a higher concentration of Ni (which is the diffusing species) from the initial stages, and saturating at Ni: Ti similar to 66:34. A thick amorphous layer (similar to 127 nm) formed towards the surface region of the structure for the irradiation dose of 4 x 10(16) ions/cm(2) remains stable with increasing the dose to 6 x 10(16) ions/cm(2), which introduces up to 6-7 at.% of Ar within the mix. The results are discussed in light of the existing models. They can be interesting for introducing a selective and controlled solid-state reaction and towards further studies of ion irradiation stability of amorphous Ni-Ti phase. (C) 2013 Elsevier B.V. All rights reserved.
T2  - Applied Surface Science
T1  - Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers
VL  - 268
SP  - 516
EP  - 523
DO  - 10.1016/j.apsusc.2012.12.158
ER  - 

@article{
author = "Milosavljević, Momir and Toprek, Dragan and Obradović, Marko O. and Grce, Ana and Peruško, Davor and Dražić, Goran and Kovač, Janez and Homewood, Kevin P.",
year = "2013",
abstract = "The effects of Ar ion irradiation on interfacial reactions induced in Ni/Ti multilayers were investigated. Structures consisting of 10 alternate Ni (similar to 26 nm) and Ti (similar to 20 nm) layers of a total thickness similar to 230 nm were deposited by ion sputtering on Si (1 0 0) wafers. Argon irradiations were done at 180 keV, to the doses of 1-6 x 10(16) ions/cm(2), the samples being held at room temperature. The projected implanted ion range is 86 +/- 36 nm, maximum energy loss is closer to the surface, and maximum displacements per atom (dpa) from 47 to 284 for Ni and 26 to 156 for Ti. Characterizations of samples were performed by transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). It is shown that ion irradiation induced a progressed intermixing in the mostly affected zone already for the lowest dose, the thickness of the mix increasing linearly with the irradiation dose. The mixed phase is fully amorphous, starting with a higher concentration of Ni (which is the diffusing species) from the initial stages, and saturating at Ni: Ti similar to 66:34. A thick amorphous layer (similar to 127 nm) formed towards the surface region of the structure for the irradiation dose of 4 x 10(16) ions/cm(2) remains stable with increasing the dose to 6 x 10(16) ions/cm(2), which introduces up to 6-7 at.% of Ar within the mix. The results are discussed in light of the existing models. They can be interesting for introducing a selective and controlled solid-state reaction and towards further studies of ion irradiation stability of amorphous Ni-Ti phase. (C) 2013 Elsevier B.V. All rights reserved.",
journal = "Applied Surface Science",
title = "Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers",
volume = "268",
pages = "516-523",
doi = "10.1016/j.apsusc.2012.12.158"
}

Milosavljević, M., Toprek, D., Obradović, M. O., Grce, A., Peruško, D., Dražić, G., Kovač, J.,& Homewood, K. P.. (2013). Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers. in Applied Surface Science, 268, 516-523.
https://doi.org/10.1016/j.apsusc.2012.12.158

Milosavljević M, Toprek D, Obradović MO, Grce A, Peruško D, Dražić G, Kovač J, Homewood KP. Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers. in Applied Surface Science. 2013;268:516-523.
doi:10.1016/j.apsusc.2012.12.158 .

Milosavljević, Momir, Toprek, Dragan, Obradović, Marko O., Grce, Ana, Peruško, Davor, Dražić, Goran, Kovač, Janez, Homewood, Kevin P., "Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers" in Applied Surface Science, 268 (2013):516-523,
https://doi.org/10.1016/j.apsusc.2012.12.158 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Stojanovic, N.
AU  - Peruško, Davor
AU  - Timotijević, B.
AU  - Toprek, Dragan
AU  - Kovač, Janez
AU  - Dražić, Goran
AU  - Jeynes, C.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4631
AB  - Interactions induced in Al/Ti multilayers by implantation of Ar ions at room temperature were investgated. Initial structures consisted of (Al/Ti) x 5 multilayers deposited by d.c. ion sputtering on Si(1 0 0) wafers, to a total thickness of similar to 250 nm. They were irradiated with 200 keV Ar+ ions, to the fluences from 5 x 10(15) to 4 x 10(16) ions/cm(2). It was found that ion irradiation induced a progressed intermixing of the multilayer constituents and Al-Ti nanoalloying for the highest applied fluence. The resulting nanocrystalline structure had a graded composition with non-reacted or interdiffused Al and Ti, and gamma-AlTi and AlTi3 intermetallic phases. Most intense reactivity was observed around mid depth of the multilayers, where most energy was deposited by the impact ions. It is presumed that Al-Ti chemical reaction is triggered by thermal spikes and further enhanced by chemical driving forces. The applied processing can be interesting for fabrication of tightly bond multilayered structures with gradual changes of their composition and properties. (C) 2011 Elsevier B. V. All rights reserved.
T2  - Applied Surface Science
T1  - Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers
VL  - 258
IS  - 6
SP  - 2043
EP  - 2046
DO  - 10.1016/j.apsusc.2011.04.107
ER  - 

@article{
author = "Milosavljević, Momir and Stojanovic, N. and Peruško, Davor and Timotijević, B. and Toprek, Dragan and Kovač, Janez and Dražić, Goran and Jeynes, C.",
year = "2012",
abstract = "Interactions induced in Al/Ti multilayers by implantation of Ar ions at room temperature were investgated. Initial structures consisted of (Al/Ti) x 5 multilayers deposited by d.c. ion sputtering on Si(1 0 0) wafers, to a total thickness of similar to 250 nm. They were irradiated with 200 keV Ar+ ions, to the fluences from 5 x 10(15) to 4 x 10(16) ions/cm(2). It was found that ion irradiation induced a progressed intermixing of the multilayer constituents and Al-Ti nanoalloying for the highest applied fluence. The resulting nanocrystalline structure had a graded composition with non-reacted or interdiffused Al and Ti, and gamma-AlTi and AlTi3 intermetallic phases. Most intense reactivity was observed around mid depth of the multilayers, where most energy was deposited by the impact ions. It is presumed that Al-Ti chemical reaction is triggered by thermal spikes and further enhanced by chemical driving forces. The applied processing can be interesting for fabrication of tightly bond multilayered structures with gradual changes of their composition and properties. (C) 2011 Elsevier B. V. All rights reserved.",
journal = "Applied Surface Science",
title = "Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers",
volume = "258",
number = "6",
pages = "2043-2046",
doi = "10.1016/j.apsusc.2011.04.107"
}

Milosavljević, M., Stojanovic, N., Peruško, D., Timotijević, B., Toprek, D., Kovač, J., Dražić, G.,& Jeynes, C.. (2012). Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers. in Applied Surface Science, 258(6), 2043-2046.
https://doi.org/10.1016/j.apsusc.2011.04.107

Milosavljević M, Stojanovic N, Peruško D, Timotijević B, Toprek D, Kovač J, Dražić G, Jeynes C. Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers. in Applied Surface Science. 2012;258(6):2043-2046.
doi:10.1016/j.apsusc.2011.04.107 .

Milosavljević, Momir, Stojanovic, N., Peruško, Davor, Timotijević, B., Toprek, Dragan, Kovač, Janez, Dražić, Goran, Jeynes, C., "Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers" in Applied Surface Science, 258, no. 6 (2012):2043-2046,
https://doi.org/10.1016/j.apsusc.2011.04.107 . .

TY  - JOUR
AU  - Erich, Marko
AU  - Petrović, Srđan M.
AU  - Kokkoris, Michael
AU  - Lagoyannis, Anastasios
AU  - Paneta, Valentina
AU  - Harissopulos, S.
AU  - Telečki, Igor N.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4749
AB  - This work reports on the experimentally obtained depth profiles of 4 MeV N-14(2+) ions implanted in the (100), (110) and randomly oriented silicon crystals. The ion fluence was 10(17) particles/cm(2), The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of N-14(d,alpha(0))C-12 and N-14(d,alpha(1))C-12 nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen bubble formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals
VL  - 274
SP  - 87
EP  - 92
DO  - 10.1016/j.nimb.2011.12.008
ER  - 

@article{
author = "Erich, Marko and Petrović, Srđan M. and Kokkoris, Michael and Lagoyannis, Anastasios and Paneta, Valentina and Harissopulos, S. and Telečki, Igor N.",
year = "2012",
abstract = "This work reports on the experimentally obtained depth profiles of 4 MeV N-14(2+) ions implanted in the (100), (110) and randomly oriented silicon crystals. The ion fluence was 10(17) particles/cm(2), The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of N-14(d,alpha(0))C-12 and N-14(d,alpha(1))C-12 nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen bubble formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals",
volume = "274",
pages = "87-92",
doi = "10.1016/j.nimb.2011.12.008"
}

Erich, M., Petrović, S. M., Kokkoris, M., Lagoyannis, A., Paneta, V., Harissopulos, S.,& Telečki, I. N.. (2012). Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 274, 87-92.
https://doi.org/10.1016/j.nimb.2011.12.008

Erich M, Petrović SM, Kokkoris M, Lagoyannis A, Paneta V, Harissopulos S, Telečki IN. Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2012;274:87-92.
doi:10.1016/j.nimb.2011.12.008 .

Erich, Marko, Petrović, Srđan M., Kokkoris, Michael, Lagoyannis, Anastasios, Paneta, Valentina, Harissopulos, S., Telečki, Igor N., "Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 274 (2012):87-92,
https://doi.org/10.1016/j.nimb.2011.12.008 . .

TY  - JOUR
AU  - Peruško, Davor
AU  - Petrović, Suzana
AU  - Stojanović, Mirjana
AU  - Mitrić, Miodrag
AU  - Cizmovic, M.
AU  - Panjan, Matjaž
AU  - Milosavljević, Momir
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4913
AB  - The effects of Ar+ ion irradiation on Al/Ti multilayers at room temperature were investigated. Eight (Al/Ti) bilayers were deposited by d.c. ion sputtering on (100) Si wafers to a total thickness of similar to 300 nm. Ion irradiations were performed by 180 keV Ar+ ions with doses 1-6 x 10(16) ions cm(-2). After implantation the samples were vacuum annealed at 400 degrees C for 30 min. Ion irradiations induced intermixing of layer constituents. and for the highest fluence formation of AlTi and AlTi3 intermetallic phases in the vicinity of the mid projected range of the impact ions. Subsequent vacuum annealing of sample implanted to 6 x 10(16) ions cm(-2) lead to transformation of all deposited layers into AlTi3 and gamma-AlTi intermetallic phases, except for 3-4 layers close to the substrate which were out of range of the effects induced by ion implantation. It is assumed that Al-Ti reaction was initiated by thermal spikes and further enhanced by chemical driving forces, but only in the intermixed region. This procedure may be interesting for fabrication of Al-Ti intermetallic compounds tightly adhered on different substrates. (C) 2011 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Formation of intermetallics by ion implantation of multilatered Al/Ti nano-structures
VL  - 282
SP  - 4
EP  - 7
DO  - 10.1016/j.nimb.2011.08.038
ER  - 

@article{
author = "Peruško, Davor and Petrović, Suzana and Stojanović, Mirjana and Mitrić, Miodrag and Cizmovic, M. and Panjan, Matjaž and Milosavljević, Momir",
year = "2012",
abstract = "The effects of Ar+ ion irradiation on Al/Ti multilayers at room temperature were investigated. Eight (Al/Ti) bilayers were deposited by d.c. ion sputtering on (100) Si wafers to a total thickness of similar to 300 nm. Ion irradiations were performed by 180 keV Ar+ ions with doses 1-6 x 10(16) ions cm(-2). After implantation the samples were vacuum annealed at 400 degrees C for 30 min. Ion irradiations induced intermixing of layer constituents. and for the highest fluence formation of AlTi and AlTi3 intermetallic phases in the vicinity of the mid projected range of the impact ions. Subsequent vacuum annealing of sample implanted to 6 x 10(16) ions cm(-2) lead to transformation of all deposited layers into AlTi3 and gamma-AlTi intermetallic phases, except for 3-4 layers close to the substrate which were out of range of the effects induced by ion implantation. It is assumed that Al-Ti reaction was initiated by thermal spikes and further enhanced by chemical driving forces, but only in the intermixed region. This procedure may be interesting for fabrication of Al-Ti intermetallic compounds tightly adhered on different substrates. (C) 2011 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Formation of intermetallics by ion implantation of multilatered Al/Ti nano-structures",
volume = "282",
pages = "4-7",
doi = "10.1016/j.nimb.2011.08.038"
}

Peruško, D., Petrović, S., Stojanović, M., Mitrić, M., Cizmovic, M., Panjan, M.,& Milosavljević, M.. (2012). Formation of intermetallics by ion implantation of multilatered Al/Ti nano-structures. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 282, 4-7.
https://doi.org/10.1016/j.nimb.2011.08.038

Peruško D, Petrović S, Stojanović M, Mitrić M, Cizmovic M, Panjan M, Milosavljević M. Formation of intermetallics by ion implantation of multilatered Al/Ti nano-structures. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2012;282:4-7.
doi:10.1016/j.nimb.2011.08.038 .

Peruško, Davor, Petrović, Suzana, Stojanović, Mirjana, Mitrić, Miodrag, Cizmovic, M., Panjan, Matjaž, Milosavljević, Momir, "Formation of intermetallics by ion implantation of multilatered Al/Ti nano-structures" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 282 (2012):4-7,
https://doi.org/10.1016/j.nimb.2011.08.038 . .

TY  - JOUR
AU  - Petrović, Suzana
AU  - Peruško, Davor
AU  - Mitrić, Miodrag
AU  - Kovač, Janez
AU  - Dražić, Goran
AU  - Gaković, Biljana M.
AU  - Homewood, Kevin P.
AU  - Milosavljević, Momir
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4839
AB  - Ion implantation and thermal annealing effects on composition and structure of Ni/Ti multilayer have been studied and reported in this paper. The thin films composed of five (Ni/Ti) bilayers were deposited by d.c. ion sputtering on (100) Si wafers to a total thickness of similar to 180 nm. Ion irradiations were performed by 180 keV Ar+ ions with fluence of 6 x 10(16) ions cm(-2). After deposition and implantation, the samples were annealed at 400 degrees C for 30 min in an inert ambient. Composition and structural characterizations were performed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Annealing of as-deposited samples at 400 degrees C induces a progressed interaction between Ni and Ti layers with the initial formation of NiTi alloy phase. Progressed alloying was achieved for the ion fluence of 6 x 10(16) ions cm(-2) and the formed structure is composed of NiTi compound, only at depth around the projected ion range. In the deeper layers, beyond the projected range of implanted ions, the diffusion of Ni atoms can lead to solid state amorphization. Subsequent annealing at 400 degrees C for 30 min enabled enhanced interaction between intermixed Ni and Ti layers, and in the layers close to the Si substrate the conditions for the formation of intermetallic compound are created. (c) 2012 Elsevier Ltd. All rights reserved.
T2  - Intermetallics
T1  - Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing
VL  - 25
SP  - 27
EP  - 33
DO  - 10.1016/j.intermet.2012.02.007
ER  - 

@article{
author = "Petrović, Suzana and Peruško, Davor and Mitrić, Miodrag and Kovač, Janez and Dražić, Goran and Gaković, Biljana M. and Homewood, Kevin P. and Milosavljević, Momir",
year = "2012",
abstract = "Ion implantation and thermal annealing effects on composition and structure of Ni/Ti multilayer have been studied and reported in this paper. The thin films composed of five (Ni/Ti) bilayers were deposited by d.c. ion sputtering on (100) Si wafers to a total thickness of similar to 180 nm. Ion irradiations were performed by 180 keV Ar+ ions with fluence of 6 x 10(16) ions cm(-2). After deposition and implantation, the samples were annealed at 400 degrees C for 30 min in an inert ambient. Composition and structural characterizations were performed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Annealing of as-deposited samples at 400 degrees C induces a progressed interaction between Ni and Ti layers with the initial formation of NiTi alloy phase. Progressed alloying was achieved for the ion fluence of 6 x 10(16) ions cm(-2) and the formed structure is composed of NiTi compound, only at depth around the projected ion range. In the deeper layers, beyond the projected range of implanted ions, the diffusion of Ni atoms can lead to solid state amorphization. Subsequent annealing at 400 degrees C for 30 min enabled enhanced interaction between intermixed Ni and Ti layers, and in the layers close to the Si substrate the conditions for the formation of intermetallic compound are created. (c) 2012 Elsevier Ltd. All rights reserved.",
journal = "Intermetallics",
title = "Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing",
volume = "25",
pages = "27-33",
doi = "10.1016/j.intermet.2012.02.007"
}

Petrović, S., Peruško, D., Mitrić, M., Kovač, J., Dražić, G., Gaković, B. M., Homewood, K. P.,& Milosavljević, M.. (2012). Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing. in Intermetallics, 25, 27-33.
https://doi.org/10.1016/j.intermet.2012.02.007

Petrović S, Peruško D, Mitrić M, Kovač J, Dražić G, Gaković BM, Homewood KP, Milosavljević M. Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing. in Intermetallics. 2012;25:27-33.
doi:10.1016/j.intermet.2012.02.007 .

Petrović, Suzana, Peruško, Davor, Mitrić, Miodrag, Kovač, Janez, Dražić, Goran, Gaković, Biljana M., Homewood, Kevin P., Milosavljević, Momir, "Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing" in Intermetallics, 25 (2012):27-33,
https://doi.org/10.1016/j.intermet.2012.02.007 . .

TY  - JOUR
AU  - Shtereva, K. S.
AU  - Novotny, I.
AU  - Tvarozek, V.
AU  - Vojs, Marian
AU  - Flickyngerova, S.
AU  - Sutta, P.
AU  - Vincze, A.
AU  - Milosavljević, Momir
AU  - Jeynes, C.
AU  - Peng, N.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5518
AB  - The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode sputtering were altered via nitrogen implantation by performing two implants at 40 keV and 80 keV with doses of 1 x 10(15) and 1 x 10(16) cm(-2) to achieve a p-type semiconductor. An implantation of 1 x 10(15) cm(-2) N+-ions yielded a p-type with hole concentrations 10(17)-10(18) cm(-3) in some as-implanted samples. The films annealed at temperatures above 200 degrees C in O-2 and above 400 degrees C in N-2 were n-type with electron concentrations 10(17)-10(20) cm(-3). The higher nitrogen concentration (confirmed by SRIM and SIMS), in the films implanted with a 1 x 10(16) cm(-2) dose, resulted in lower electron concentrations, respectively, higher resistivity, due to compensation of donors by nitrogen acceptors. The electron concentrations ratio n((1) (x) (1015))/ n((1 x 1016)) decreases with increasing annealing temperature. Hall measurements showed that 1 x 10(16) cm(-2) N-implanted films became p-type after low temperature annealing in O-2 at 200 degrees C and in N-2 at 400 degrees C with hole concentrations of 3.2 x 10(17) cm(-3) and 1.6 x 10(19) cm(-3), respectively. Nitrogen-implanted ZnO:Ga films showed a c-axes preferred orientation of the crystallites. Annealing is shown to increase the average transmittance ( GT 80%) of the films and to cause bandgap widening (3.19-3.3 eV). (C) 2012 The Electrochemical Society. All rights reserved.
T2  - ECS Journal of Solid State Science and Technology
T1  - Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation
VL  - 1
IS  - 5
SP  - P237
EP  - P240
DO  - 10.1149/2.003206jss
ER  - 

@article{
author = "Shtereva, K. S. and Novotny, I. and Tvarozek, V. and Vojs, Marian and Flickyngerova, S. and Sutta, P. and Vincze, A. and Milosavljević, Momir and Jeynes, C. and Peng, N.",
year = "2012",
abstract = "The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin films prepared by rf diode sputtering were altered via nitrogen implantation by performing two implants at 40 keV and 80 keV with doses of 1 x 10(15) and 1 x 10(16) cm(-2) to achieve a p-type semiconductor. An implantation of 1 x 10(15) cm(-2) N+-ions yielded a p-type with hole concentrations 10(17)-10(18) cm(-3) in some as-implanted samples. The films annealed at temperatures above 200 degrees C in O-2 and above 400 degrees C in N-2 were n-type with electron concentrations 10(17)-10(20) cm(-3). The higher nitrogen concentration (confirmed by SRIM and SIMS), in the films implanted with a 1 x 10(16) cm(-2) dose, resulted in lower electron concentrations, respectively, higher resistivity, due to compensation of donors by nitrogen acceptors. The electron concentrations ratio n((1) (x) (1015))/ n((1 x 1016)) decreases with increasing annealing temperature. Hall measurements showed that 1 x 10(16) cm(-2) N-implanted films became p-type after low temperature annealing in O-2 at 200 degrees C and in N-2 at 400 degrees C with hole concentrations of 3.2 x 10(17) cm(-3) and 1.6 x 10(19) cm(-3), respectively. Nitrogen-implanted ZnO:Ga films showed a c-axes preferred orientation of the crystallites. Annealing is shown to increase the average transmittance ( GT 80%) of the films and to cause bandgap widening (3.19-3.3 eV). (C) 2012 The Electrochemical Society. All rights reserved.",
journal = "ECS Journal of Solid State Science and Technology",
title = "Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation",
volume = "1",
number = "5",
pages = "P237-P240",
doi = "10.1149/2.003206jss"
}

Shtereva, K. S., Novotny, I., Tvarozek, V., Vojs, M., Flickyngerova, S., Sutta, P., Vincze, A., Milosavljević, M., Jeynes, C.,& Peng, N.. (2012). Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation. in ECS Journal of Solid State Science and Technology, 1(5), P237-P240.
https://doi.org/10.1149/2.003206jss

Shtereva KS, Novotny I, Tvarozek V, Vojs M, Flickyngerova S, Sutta P, Vincze A, Milosavljević M, Jeynes C, Peng N. Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation. in ECS Journal of Solid State Science and Technology. 2012;1(5):P237-P240.
doi:10.1149/2.003206jss .

Shtereva, K. S., Novotny, I., Tvarozek, V., Vojs, Marian, Flickyngerova, S., Sutta, P., Vincze, A., Milosavljević, Momir, Jeynes, C., Peng, N., "Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation" in ECS Journal of Solid State Science and Technology, 1, no. 5 (2012):P237-P240,
https://doi.org/10.1149/2.003206jss . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Milinović, Velimir
AU  - Peruško, Davor
AU  - Grce, Ana
AU  - Stojanović, Mirjana
AU  - Pjević, Dejan J.
AU  - Mitrić, Miodrag
AU  - Kovač, Janez
AU  - Homewood, Kevin P.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4487
AB  - The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (similar to 23 nm) and Ti (similar to 17 nm) layers of a total thickness similar to 200 nm. They were irradiated at room temperature with 200 key Ar(+), to the fluences from 5 x 10(15) to 2 x 10(16) ions/cm(2). The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom similar to 130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy Delta H(f) = +2 kJ/mol). It is estimated that up to similar to 5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures. (C) 2011 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation
VL  - 269
IS  - 19
SP  - 2090
EP  - 2097
DO  - 10.1016/j.nimb.2011.06.017
ER  - 

@article{
author = "Milosavljević, Momir and Milinović, Velimir and Peruško, Davor and Grce, Ana and Stojanović, Mirjana and Pjević, Dejan J. and Mitrić, Miodrag and Kovač, Janez and Homewood, Kevin P.",
year = "2011",
abstract = "The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (similar to 23 nm) and Ti (similar to 17 nm) layers of a total thickness similar to 200 nm. They were irradiated at room temperature with 200 key Ar(+), to the fluences from 5 x 10(15) to 2 x 10(16) ions/cm(2). The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom similar to 130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy Delta H(f) = +2 kJ/mol). It is estimated that up to similar to 5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures. (C) 2011 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation",
volume = "269",
number = "19",
pages = "2090-2097",
doi = "10.1016/j.nimb.2011.06.017"
}

Milosavljević, M., Milinović, V., Peruško, D., Grce, A., Stojanović, M., Pjević, D. J., Mitrić, M., Kovač, J.,& Homewood, K. P.. (2011). Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269(19), 2090-2097.
https://doi.org/10.1016/j.nimb.2011.06.017

Milosavljević M, Milinović V, Peruško D, Grce A, Stojanović M, Pjević DJ, Mitrić M, Kovač J, Homewood KP. Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2011;269(19):2090-2097.
doi:10.1016/j.nimb.2011.06.017 .

Milosavljević, Momir, Milinović, Velimir, Peruško, Davor, Grce, Ana, Stojanović, Mirjana, Pjević, Dejan J., Mitrić, Miodrag, Kovač, Janez, Homewood, Kevin P., "Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269, no. 19 (2011):2090-2097,
https://doi.org/10.1016/j.nimb.2011.06.017 . .