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COST Actions [CM1101, MP1106]

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Influence of sulphide precursor on crystal phase of ternary I-III-VI2 semiconductors

Beloš, Milica V.; Abazović, Nadica; Kuljanin-Jakovljević, Jadranka Ž.; Janković, Ivana A.; Ahrenkiel, Scott Phillip; Mitrić, Miodrag; Čomor, Mirjana

(2013)

TY  - JOUR
AU  - Beloš, Milica V.
AU  - Abazović, Nadica
AU  - Kuljanin-Jakovljević, Jadranka Ž.
AU  - Janković, Ivana A.
AU  - Ahrenkiel, Scott Phillip
AU  - Mitrić, Miodrag
AU  - Čomor, Mirjana
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5767
AB  - Samples of AgInS2 and CuInS2 nanoparticles were synthesized by hot-injection method at 270 degrees C using 1-dodecanethiol (DT) and elemental sulphur (S) as sulphide precursors, and oleylamine as reaction medium and surfactant. Composition, crystal structure, and particle size of obtained materials were tracked by XRD and TEM/HRTEM measurements. It was shown that, due to its dual role as sulphur source and surfactant, DT drastically slows formation of desired material. Samples obtained with DT even after 4 h of reaction have traces of intermediary compound (beta-In2S3), whereas in samples synthesized with elemental S these traces are less pronounced. The growth mechanism and influence of each reaction step are discussed in detail.
T2  - Journal of Nanoparticle Research
T1  - Influence of sulphide precursor on crystal phase of ternary I-III-VI2 semiconductors
VL  - 15
IS  - 12
DO  - 10.1007/s11051-013-2148-6
ER  - 
@article{
author = "Beloš, Milica V. and Abazović, Nadica and Kuljanin-Jakovljević, Jadranka Ž. and Janković, Ivana A. and Ahrenkiel, Scott Phillip and Mitrić, Miodrag and Čomor, Mirjana",
year = "2013",
abstract = "Samples of AgInS2 and CuInS2 nanoparticles were synthesized by hot-injection method at 270 degrees C using 1-dodecanethiol (DT) and elemental sulphur (S) as sulphide precursors, and oleylamine as reaction medium and surfactant. Composition, crystal structure, and particle size of obtained materials were tracked by XRD and TEM/HRTEM measurements. It was shown that, due to its dual role as sulphur source and surfactant, DT drastically slows formation of desired material. Samples obtained with DT even after 4 h of reaction have traces of intermediary compound (beta-In2S3), whereas in samples synthesized with elemental S these traces are less pronounced. The growth mechanism and influence of each reaction step are discussed in detail.",
journal = "Journal of Nanoparticle Research",
title = "Influence of sulphide precursor on crystal phase of ternary I-III-VI2 semiconductors",
volume = "15",
number = "12",
doi = "10.1007/s11051-013-2148-6"
}
Beloš, M. V., Abazović, N., Kuljanin-Jakovljević, J. Ž., Janković, I. A., Ahrenkiel, S. P., Mitrić, M.,& Čomor, M.. (2013). Influence of sulphide precursor on crystal phase of ternary I-III-VI2 semiconductors. in Journal of Nanoparticle Research, 15(12).
https://doi.org/10.1007/s11051-013-2148-6
Beloš MV, Abazović N, Kuljanin-Jakovljević JŽ, Janković IA, Ahrenkiel SP, Mitrić M, Čomor M. Influence of sulphide precursor on crystal phase of ternary I-III-VI2 semiconductors. in Journal of Nanoparticle Research. 2013;15(12).
doi:10.1007/s11051-013-2148-6 .
Beloš, Milica V., Abazović, Nadica, Kuljanin-Jakovljević, Jadranka Ž., Janković, Ivana A., Ahrenkiel, Scott Phillip, Mitrić, Miodrag, Čomor, Mirjana, "Influence of sulphide precursor on crystal phase of ternary I-III-VI2 semiconductors" in Journal of Nanoparticle Research, 15, no. 12 (2013),
https://doi.org/10.1007/s11051-013-2148-6 . .
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