TY  - JOUR
AU  - Milosavljević, Momir
AU  - Wong, Lewis
AU  - Lourenco, Manon
AU  - Valizadeh, Reza
AU  - Colligon, John
AU  - Shao, Guosheng
AU  - Homewood, Kevin P.
PY  - 2010
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4097
AB  - Iron-disilicide films were sputter deposited on Si(100) wafers to 300-400 nm, at substrate temperatures ranging from room temperature to 700 degrees C As-deposited films were amorphous at deposition temperatures up to 200 degrees C, and crystalline beta-FeSi2 at 300-700 degrees C Amorphous films were heat-treated after deposition at 300-700 degrees C They remained amorphous up to 400 degrees C, and transformed to crystalline beta-FeSi2 at 500-700 degrees C Optical absorption measurements showed that the band gap of all films is direct in nature, ranging from 0 88 to 0 93 eV The deposition temperature was seen to affect the crystallinity of the as-deposited films and to vary their optical properties significantly The photoabsorption coefficient, measured at 1 eV, increased from 5 6 x 10(4) cm(-1) for amorphous films to 1.2 x 10(5) cm(-1) for the samples deposited at 700 degrees C The films crystallized by heat-treatment had a markedly different and irregular structure, resulting in their lower optical absorption (C) 2010 The Japan Society of Applied Physics
T2  - Japanese Journal of Applied Physics
T1  - Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films
VL  - 49
IS  - 8
DO  - 10.1143/JJAP.49.081401
ER  - 

@article{
author = "Milosavljević, Momir and Wong, Lewis and Lourenco, Manon and Valizadeh, Reza and Colligon, John and Shao, Guosheng and Homewood, Kevin P.",
year = "2010",
abstract = "Iron-disilicide films were sputter deposited on Si(100) wafers to 300-400 nm, at substrate temperatures ranging from room temperature to 700 degrees C As-deposited films were amorphous at deposition temperatures up to 200 degrees C, and crystalline beta-FeSi2 at 300-700 degrees C Amorphous films were heat-treated after deposition at 300-700 degrees C They remained amorphous up to 400 degrees C, and transformed to crystalline beta-FeSi2 at 500-700 degrees C Optical absorption measurements showed that the band gap of all films is direct in nature, ranging from 0 88 to 0 93 eV The deposition temperature was seen to affect the crystallinity of the as-deposited films and to vary their optical properties significantly The photoabsorption coefficient, measured at 1 eV, increased from 5 6 x 10(4) cm(-1) for amorphous films to 1.2 x 10(5) cm(-1) for the samples deposited at 700 degrees C The films crystallized by heat-treatment had a markedly different and irregular structure, resulting in their lower optical absorption (C) 2010 The Japan Society of Applied Physics",
journal = "Japanese Journal of Applied Physics",
title = "Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films",
volume = "49",
number = "8",
doi = "10.1143/JJAP.49.081401"
}

Milosavljević, M., Wong, L., Lourenco, M., Valizadeh, R., Colligon, J., Shao, G.,& Homewood, K. P.. (2010). Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films. in Japanese Journal of Applied Physics, 49(8).
https://doi.org/10.1143/JJAP.49.081401

Milosavljević M, Wong L, Lourenco M, Valizadeh R, Colligon J, Shao G, Homewood KP. Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films. in Japanese Journal of Applied Physics. 2010;49(8).
doi:10.1143/JJAP.49.081401 .

Milosavljević, Momir, Wong, Lewis, Lourenco, Manon, Valizadeh, Reza, Colligon, John, Shao, Guosheng, Homewood, Kevin P., "Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films" in Japanese Journal of Applied Physics, 49, no. 8 (2010),
https://doi.org/10.1143/JJAP.49.081401 . .