Romanization, urbanization and transformation of urban centres of civil, military and residential character in Roman provinces on territory of Serbia

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Romanization, urbanization and transformation of urban centres of civil, military and residential character in Roman provinces on territory of Serbia (en)
Романизација, урбанизација и трансформација урбаних центара цивилног војног и резиденцијалног карактера у римским провинцијама на тлу Србије (sr)
Romanizacija, urbanizacija i transformacija urbanih centara civilnog vojnog i rezidencijalnog karaktera u rimskim provincijama na tlu Srbije (sr_RS)
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Publications

Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation

Pejović, Milić M.; Ciraj-Bjelac, Olivera; Kovačević, Milojko; Rajović, Zoran; Ilić, Gvozden

(2013) 

TY  - JOUR
AU  - Pejović, Milić M.
AU  - Ciraj-Bjelac, Olivera
AU  - Kovačević, Milojko
AU  - Rajović, Zoran
AU  - Ilić, Gvozden
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5602
AB  - Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of Co-60 in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper.
T2  - International Journal of Photoenergy
T1  - Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation
DO  - 10.1155/2013/158403
ER  - 
@article{
author = "Pejović, Milić M. and Ciraj-Bjelac, Olivera and Kovačević, Milojko and Rajović, Zoran and Ilić, Gvozden",
year = "2013",
abstract = "Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of Co-60 in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper.",
journal = "International Journal of Photoenergy",
title = "Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation",
doi = "10.1155/2013/158403"
}
Pejović, M. M., Ciraj-Bjelac, O., Kovačević, M., Rajović, Z.,& Ilić, G.. (2013). Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation. in International Journal of Photoenergy.
https://doi.org/10.1155/2013/158403
Pejović MM, Ciraj-Bjelac O, Kovačević M, Rajović Z, Ilić G. Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation. in International Journal of Photoenergy. 2013;.
doi:10.1155/2013/158403 .
Pejović, Milić M., Ciraj-Bjelac, Olivera, Kovačević, Milojko, Rajović, Zoran, Ilić, Gvozden, "Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation" in International Journal of Photoenergy (2013),
https://doi.org/10.1155/2013/158403 . .
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