TY  - CONF
AU  - Ilić, S.
AU  - Jevtić, A.
AU  - Stanković, Srboljub
AU  - Davidović, Vojkan S.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8657
AB  - In this paper we investigated the feasibility of using a commercial programmable floating-gate MOS transistor (EPAD) as a radiation dosimeter. The results show that EPAD with zero bias have the sensitivity of 9.2 mV/Gy and low fading. EPADs with a higher initial threshold voltage show very good linearity with the radiation dose. After its annealing at 70 °C there is a visible recovery of transfer characteristics due to a parasitic parallel resistive path that occurs during irradiation. Apart from that, the threshold voltage is slightly recovered. The programming time of an EPAD increases with the absorbed dose and depends on gate biasing during irradiation. © 2019 IEEE.
PB  - IEEE
C3  - 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
T1  - Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry
SP  - 67
EP  - 70
DO  - 10.1109/MIEL.2019.8889570
ER  - 

@conference{
author = "Ilić, S. and Jevtić, A. and Stanković, Srboljub and Davidović, Vojkan S.",
year = "2019",
abstract = "In this paper we investigated the feasibility of using a commercial programmable floating-gate MOS transistor (EPAD) as a radiation dosimeter. The results show that EPAD with zero bias have the sensitivity of 9.2 mV/Gy and low fading. EPADs with a higher initial threshold voltage show very good linearity with the radiation dose. After its annealing at 70 °C there is a visible recovery of transfer characteristics due to a parasitic parallel resistive path that occurs during irradiation. Apart from that, the threshold voltage is slightly recovered. The programming time of an EPAD increases with the absorbed dose and depends on gate biasing during irradiation. © 2019 IEEE.",
publisher = "IEEE",
journal = "2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings",
title = "Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry",
pages = "67-70",
doi = "10.1109/MIEL.2019.8889570"
}

Ilić, S., Jevtić, A., Stanković, S.,& Davidović, V. S.. (2019). Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry. in 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
IEEE., 67-70.
https://doi.org/10.1109/MIEL.2019.8889570

Ilić S, Jevtić A, Stanković S, Davidović VS. Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry. in 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings. 2019;:67-70.
doi:10.1109/MIEL.2019.8889570 .

Ilić, S., Jevtić, A., Stanković, Srboljub, Davidović, Vojkan S., "Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry" in 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings (2019):67-70,
https://doi.org/10.1109/MIEL.2019.8889570 . .

TY  - JOUR
AU  - Stojadinović, N.
AU  - Đorić-Veljković, S.
AU  - Davidović, V.
AU  - Golubović, S.
AU  - Stanković, Srboljub
AU  - Prijić, A.
AU  - Prijić, Z.
AU  - Manić, I.
AU  - Danković, D.
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12129
AB  - In this paper it is shown that NBT stress effects in previously irradiated devices are strongly dependent on the total dose received. Namely, in the case of low-dose irradiation the subsequent NBT stress seems to lead to further device degradation. On the other hand, in the case of devices previously irradiated to higher doses, NBT stress seems to have positive role as it practically anneals a part of radiation-induced degradation. The total dose received at which NBT stress almost completely anneals radiation-induced degradation is determined to be around 60 Gy.
T2  - Microelectronics Reliability
T1  - NBTI and irradiation related degradation mechanisms in power VDMOS transistors
VL  - 88-90
SP  - 135
EP  - 141
DO  - 10.1016/j.microrel.2018.07.138
ER  - 

@article{
author = "Stojadinović, N. and Đorić-Veljković, S. and Davidović, V. and Golubović, S. and Stanković, Srboljub and Prijić, A. and Prijić, Z. and Manić, I. and Danković, D.",
year = "2018",
abstract = "In this paper it is shown that NBT stress effects in previously irradiated devices are strongly dependent on the total dose received. Namely, in the case of low-dose irradiation the subsequent NBT stress seems to lead to further device degradation. On the other hand, in the case of devices previously irradiated to higher doses, NBT stress seems to have positive role as it practically anneals a part of radiation-induced degradation. The total dose received at which NBT stress almost completely anneals radiation-induced degradation is determined to be around 60 Gy.",
journal = "Microelectronics Reliability",
title = "NBTI and irradiation related degradation mechanisms in power VDMOS transistors",
volume = "88-90",
pages = "135-141",
doi = "10.1016/j.microrel.2018.07.138"
}

Stojadinović, N., Đorić-Veljković, S., Davidović, V., Golubović, S., Stanković, S., Prijić, A., Prijić, Z., Manić, I.,& Danković, D.. (2018). NBTI and irradiation related degradation mechanisms in power VDMOS transistors. in Microelectronics Reliability, 88-90, 135-141.
https://doi.org/10.1016/j.microrel.2018.07.138

Stojadinović N, Đorić-Veljković S, Davidović V, Golubović S, Stanković S, Prijić A, Prijić Z, Manić I, Danković D. NBTI and irradiation related degradation mechanisms in power VDMOS transistors. in Microelectronics Reliability. 2018;88-90:135-141.
doi:10.1016/j.microrel.2018.07.138 .

Stojadinović, N., Đorić-Veljković, S., Davidović, V., Golubović, S., Stanković, Srboljub, Prijić, A., Prijić, Z., Manić, I., Danković, D., "NBTI and irradiation related degradation mechanisms in power VDMOS transistors" in Microelectronics Reliability, 88-90 (2018):135-141,
https://doi.org/10.1016/j.microrel.2018.07.138 . .

TY  - JOUR
AU  - Davidović, Vojkan
AU  - Danković, Danijel
AU  - Golubović, Snežana
AU  - Đorić-Veljković, Snežana
AU  - Manić, Ivica
AU  - Prijić, Zoran
AU  - Prijić, Aneta
AU  - Stojadinović, Ninoslav
AU  - Stanković, Srboljub
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12131
AB  - In this paper we provide an overview of instabilities observed in commercial power VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The results have indicated that irradiation of previously NBT stressed devices leads to additional threshold voltage shift, while NBT stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. This points to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of exposure have to be considered. It has also been shown that changes in the densities of oxide trapped charge and interface traps during spontaneous recovery after each of applied stresses can be significant, thus leading to additional instability, even though the threshold voltage seems to remain stable, pointing to the need for clarifying the responsible mechanisms.
T2  - Facta universitatis - series: Electronics and Energetics
T1  - NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs
VL  - 31
IS  - 3
SP  - 367
EP  - 388
DO  - 10.2298/FUEE1803367D
ER  - 

@article{
author = "Davidović, Vojkan and Danković, Danijel and Golubović, Snežana and Đorić-Veljković, Snežana and Manić, Ivica and Prijić, Zoran and Prijić, Aneta and Stojadinović, Ninoslav and Stanković, Srboljub",
year = "2018",
abstract = "In this paper we provide an overview of instabilities observed in commercial power VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The results have indicated that irradiation of previously NBT stressed devices leads to additional threshold voltage shift, while NBT stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. This points to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of exposure have to be considered. It has also been shown that changes in the densities of oxide trapped charge and interface traps during spontaneous recovery after each of applied stresses can be significant, thus leading to additional instability, even though the threshold voltage seems to remain stable, pointing to the need for clarifying the responsible mechanisms.",
journal = "Facta universitatis - series: Electronics and Energetics",
title = "NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs",
volume = "31",
number = "3",
pages = "367-388",
doi = "10.2298/FUEE1803367D"
}

Davidović, V., Danković, D., Golubović, S., Đorić-Veljković, S., Manić, I., Prijić, Z., Prijić, A., Stojadinović, N.,& Stanković, S.. (2018). NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs. in Facta universitatis - series: Electronics and Energetics, 31(3), 367-388.
https://doi.org/10.2298/FUEE1803367D

Davidović V, Danković D, Golubović S, Đorić-Veljković S, Manić I, Prijić Z, Prijić A, Stojadinović N, Stanković S. NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs. in Facta universitatis - series: Electronics and Energetics. 2018;31(3):367-388.
doi:10.2298/FUEE1803367D .

Davidović, Vojkan, Danković, Danijel, Golubović, Snežana, Đorić-Veljković, Snežana, Manić, Ivica, Prijić, Zoran, Prijić, Aneta, Stojadinović, Ninoslav, Stanković, Srboljub, "NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs" in Facta universitatis - series: Electronics and Energetics, 31, no. 3 (2018):367-388,
https://doi.org/10.2298/FUEE1803367D . .