TY  - CONF
AU  - Ilić, Stefan
AU  - Anđelković, Marko S.
AU  - Carvajal, Miguel A.
AU  - Lallena, Antonio M.
AU  - Krstić, Miloš
AU  - Stanković, Srboljub
AU  - Ristić, Goran S.
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10020
AB  - In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode γ-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate.
C3  - MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings
T1  - Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors
SP  - 337
EP  - 340
DO  - 10.1109/MIEL52794.2021.9569076
ER  - 

@conference{
author = "Ilić, Stefan and Anđelković, Marko S. and Carvajal, Miguel A. and Lallena, Antonio M. and Krstić, Miloš and Stanković, Srboljub and Ristić, Goran S.",
year = "2021",
abstract = "In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode γ-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate.",
journal = "MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings",
title = "Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors",
pages = "337-340",
doi = "10.1109/MIEL52794.2021.9569076"
}

Ilić, S., Anđelković, M. S., Carvajal, M. A., Lallena, A. M., Krstić, M., Stanković, S.,& Ristić, G. S.. (2021). Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors. in MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings, 337-340.
https://doi.org/10.1109/MIEL52794.2021.9569076

Ilić S, Anđelković MS, Carvajal MA, Lallena AM, Krstić M, Stanković S, Ristić GS. Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors. in MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings. 2021;:337-340.
doi:10.1109/MIEL52794.2021.9569076 .

Ilić, Stefan, Anđelković, Marko S., Carvajal, Miguel A., Lallena, Antonio M., Krstić, Miloš, Stanković, Srboljub, Ristić, Goran S., "Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors" in MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings (2021):337-340,
https://doi.org/10.1109/MIEL52794.2021.9569076 . .