TY  - JOUR
AU  - Kasiuk, Julia
AU  - Fedotova, Julia
AU  - Przewoznik, Janusz
AU  - Kapusta, Czeslaw
AU  - Sikora, Marcin
AU  - Zukrowski, Jan
AU  - Grce, Ana
AU  - Milosavljević, Momir
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/962
AB  - Results of the study of oxidised (FeCoZr)(x)(CaF2)(100) (- x) films in a wide composition range (30 LT = x LT = 74 at.%) sintered at oxygen pressures P-O = 43 and 9.8 mPa with X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray absorption spectroscopy (XAS), Fe-57 Mossbauer spectroscopy (MS), and vibrating sample magnetometry (VSM) are reported. A crystalline metallic core-amorphous oxide shell structure of nanoparticles (NPs) in films oxidised at lower P-O = 43 mPa is observed in TEM images. A combined use of XRD, MS and XAS techniques provides identification of NP phase composition evidencing alpha-FeCo(Zr) core of the variable content depending on x and a complex oxide shell including amorphous alpha-Fe23+O3 together with Co1 - y2+Fey2+O at low x (30-36 at%). Full oxidation of NPs at higher P-O = 9.8 mPa is indicated by TEM, XRD, MS and XAS patterns evidencing the formation of crystalline Co1 - y2+Fey2+O core-amorphous alpha-Fe23+O3 shell structure. Progressive oxidation of NPs with decreasing x at P-O = 4.3 mPa as well as with Po increase is followed by variation of average centre shifts LT delta GT obtained from deconvoluted Fe-57 Mossbauer spectra. Magnetometry measurements of films sintered at P-O = 43 mPa reveal an effect of exchange bias confirming ferromagnetic metallic core-antiferromagnetic oxide shell structure of NPs. The results show that phase composition of oxide shells is governed both by concentration of oxygen available during synthesis and on the x. Schemes of progressive NP oxidation with identified phase composition as a function of P-o and x values are proposed. (C) 2016 Elsevier Inc. All rights reserved.
PB  - Elsevier
T2  - Materials Characterization
T1  - Oxidation controlled phase composition of FeCo(Zr) nanoparticles in CaF2 matrix
VL  - 113
SP  - 71
EP  - 81
DO  - 10.1016/j.matchar.2016.01.010
ER  - 

@article{
author = "Kasiuk, Julia and Fedotova, Julia and Przewoznik, Janusz and Kapusta, Czeslaw and Sikora, Marcin and Zukrowski, Jan and Grce, Ana and Milosavljević, Momir",
year = "2016",
abstract = "Results of the study of oxidised (FeCoZr)(x)(CaF2)(100) (- x) films in a wide composition range (30 LT = x LT = 74 at.%) sintered at oxygen pressures P-O = 43 and 9.8 mPa with X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray absorption spectroscopy (XAS), Fe-57 Mossbauer spectroscopy (MS), and vibrating sample magnetometry (VSM) are reported. A crystalline metallic core-amorphous oxide shell structure of nanoparticles (NPs) in films oxidised at lower P-O = 43 mPa is observed in TEM images. A combined use of XRD, MS and XAS techniques provides identification of NP phase composition evidencing alpha-FeCo(Zr) core of the variable content depending on x and a complex oxide shell including amorphous alpha-Fe23+O3 together with Co1 - y2+Fey2+O at low x (30-36 at%). Full oxidation of NPs at higher P-O = 9.8 mPa is indicated by TEM, XRD, MS and XAS patterns evidencing the formation of crystalline Co1 - y2+Fey2+O core-amorphous alpha-Fe23+O3 shell structure. Progressive oxidation of NPs with decreasing x at P-O = 4.3 mPa as well as with Po increase is followed by variation of average centre shifts LT delta GT obtained from deconvoluted Fe-57 Mossbauer spectra. Magnetometry measurements of films sintered at P-O = 43 mPa reveal an effect of exchange bias confirming ferromagnetic metallic core-antiferromagnetic oxide shell structure of NPs. The results show that phase composition of oxide shells is governed both by concentration of oxygen available during synthesis and on the x. Schemes of progressive NP oxidation with identified phase composition as a function of P-o and x values are proposed. (C) 2016 Elsevier Inc. All rights reserved.",
publisher = "Elsevier",
journal = "Materials Characterization",
title = "Oxidation controlled phase composition of FeCo(Zr) nanoparticles in CaF2 matrix",
volume = "113",
pages = "71-81",
doi = "10.1016/j.matchar.2016.01.010"
}

Kasiuk, J., Fedotova, J., Przewoznik, J., Kapusta, C., Sikora, M., Zukrowski, J., Grce, A.,& Milosavljević, M.. (2016). Oxidation controlled phase composition of FeCo(Zr) nanoparticles in CaF2 matrix. in Materials Characterization
Elsevier., 113, 71-81.
https://doi.org/10.1016/j.matchar.2016.01.010

Kasiuk J, Fedotova J, Przewoznik J, Kapusta C, Sikora M, Zukrowski J, Grce A, Milosavljević M. Oxidation controlled phase composition of FeCo(Zr) nanoparticles in CaF2 matrix. in Materials Characterization. 2016;113:71-81.
doi:10.1016/j.matchar.2016.01.010 .

Kasiuk, Julia, Fedotova, Julia, Przewoznik, Janusz, Kapusta, Czeslaw, Sikora, Marcin, Zukrowski, Jan, Grce, Ana, Milosavljević, Momir, "Oxidation controlled phase composition of FeCo(Zr) nanoparticles in CaF2 matrix" in Materials Characterization, 113 (2016):71-81,
https://doi.org/10.1016/j.matchar.2016.01.010 . .

TY  - JOUR
AU  - Obradović, Marko O.
AU  - Pjević, Dejan J.
AU  - Peruško, Davor
AU  - Grce, Ana
AU  - Milosavljević, Momir
AU  - Homewood, Kevin P.
AU  - Siketic, Z.
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7078
AB  - The effects of helium ion irradiation on immiscible AlN/TiN multilayered system were studied. The structure consisted of 30 alternate AlN (similar to 8 nm) and TiN (similar to 9.3 nm) layers of a total thickness around 260 nm, deposited on (100) Si substrates by reactive sputtering. The system was then implanted with 30 keV He+ to very high irradiation doses, 1-4 x 10(17) ions/cm(2). Evaluated projected ion range was 153.1 +/- 45.4 nm and maximum displacements per atom for the applied doses from 6 to 24. It was found that the multilayers remained well separated and stable after irradiation to 1 x 10(17) ions/cm(2), which introduces up to 10 at.% of He within the structure. The main effects were agglomeration of He bubbles around the projected ion range, mostly concentrated at the AlN edges of the interfaces, and a slight increase of the mean grain size within the affected zone. Increasing of the ion dose induced further agglomeration of bubbles, splitting of the layers at the interfaces, and final destruction of the structure. The evaluated He content was consistent with the implanted dose up to 2 x 10(17) ions/cm(2). For the highest dose the implanted gas is partially released from the structure. The results can be interesting towards the development of radiation tolerant materials. (C) 2015 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system
VL  - 591
SP  - 164
EP  - 168
DO  - 10.1016/j.tsf.2015.03.074
ER  - 

@article{
author = "Obradović, Marko O. and Pjević, Dejan J. and Peruško, Davor and Grce, Ana and Milosavljević, Momir and Homewood, Kevin P. and Siketic, Z.",
year = "2015",
abstract = "The effects of helium ion irradiation on immiscible AlN/TiN multilayered system were studied. The structure consisted of 30 alternate AlN (similar to 8 nm) and TiN (similar to 9.3 nm) layers of a total thickness around 260 nm, deposited on (100) Si substrates by reactive sputtering. The system was then implanted with 30 keV He+ to very high irradiation doses, 1-4 x 10(17) ions/cm(2). Evaluated projected ion range was 153.1 +/- 45.4 nm and maximum displacements per atom for the applied doses from 6 to 24. It was found that the multilayers remained well separated and stable after irradiation to 1 x 10(17) ions/cm(2), which introduces up to 10 at.% of He within the structure. The main effects were agglomeration of He bubbles around the projected ion range, mostly concentrated at the AlN edges of the interfaces, and a slight increase of the mean grain size within the affected zone. Increasing of the ion dose induced further agglomeration of bubbles, splitting of the layers at the interfaces, and final destruction of the structure. The evaluated He content was consistent with the implanted dose up to 2 x 10(17) ions/cm(2). For the highest dose the implanted gas is partially released from the structure. The results can be interesting towards the development of radiation tolerant materials. (C) 2015 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system",
volume = "591",
pages = "164-168",
doi = "10.1016/j.tsf.2015.03.074"
}

Obradović, M. O., Pjević, D. J., Peruško, D., Grce, A., Milosavljević, M., Homewood, K. P.,& Siketic, Z.. (2015). Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system. in Thin Solid Films, 591, 164-168.
https://doi.org/10.1016/j.tsf.2015.03.074

Obradović MO, Pjević DJ, Peruško D, Grce A, Milosavljević M, Homewood KP, Siketic Z. Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system. in Thin Solid Films. 2015;591:164-168.
doi:10.1016/j.tsf.2015.03.074 .

Obradović, Marko O., Pjević, Dejan J., Peruško, Davor, Grce, Ana, Milosavljević, Momir, Homewood, Kevin P., Siketic, Z., "Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system" in Thin Solid Films, 591 (2015):164-168,
https://doi.org/10.1016/j.tsf.2015.03.074 . .

TY  - JOUR
AU  - Kasiuk, J. V.
AU  - Fedotova, J. A.
AU  - Przewoznik, J.
AU  - Zukrowski, J.
AU  - Sikora, M.
AU  - Kapusta, Cz
AU  - Grce, Ana
AU  - Milosavljević, Momir
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/77
AB  - The relation between nanoscale structure, local atomic order and magnetic properties of (FeCoZr)(x)(CaF2)(100-x) (29 LT = x LT = 73 at. %) granular films is studied as a function of metal/insulator fraction ratio. The films of a thickness of 1-6 mu m were deposited on Al-foils and glass-ceramic substrates, by ion sputtering of targets of different metal/insulator contents. Structural characterization with X-ray and electron diffraction as well as transmission electron microscopy revealed that the films are composed of isolated nanocrystalline bcc alpha-FeCo(Zr) alloy and insulating fcc CaF2 matrix. They grow in a columnar structure, where elongated metallic nanograins are arranged on top of each other within the columns almost normal to the substrate surface. Mossbauer spectroscopy and magnetometry results indicate that their easy magnetization axes are oriented at an angle of 65 degrees-74 degrees to the surface in films with x between 46 and 74, above the electrical percolation threshold, which is attributed to the growth-induced shape anisotropy. Interatomic distances characteristic for metallic state of alpha-FeCo(Zr) nanograins were revealed by X-ray Absorption Spectroscopy. The results show a lack of surface oxidation of the alloy nanograins, so the growth-induced orientation of nanograins in the films cannot be attributed to this effect. The study is among the first to report a growth-induced non-planar magnetic anisotropy in metal/insulator granular films above the percolation threshold and to reveal the origin of it. (C) 2014 AIP Publishing LLC.
T2  - Journal of Applied Physics
T1  - Growth-induced non-planar magnetic anisotropy in FeCoZr-CaF2 nanogranular films: Structural and magnetic characterization
VL  - 116
IS  - 4
DO  - 10.1063/1.4891016
ER  - 

@article{
author = "Kasiuk, J. V. and Fedotova, J. A. and Przewoznik, J. and Zukrowski, J. and Sikora, M. and Kapusta, Cz and Grce, Ana and Milosavljević, Momir",
year = "2014",
abstract = "The relation between nanoscale structure, local atomic order and magnetic properties of (FeCoZr)(x)(CaF2)(100-x) (29 LT = x LT = 73 at. %) granular films is studied as a function of metal/insulator fraction ratio. The films of a thickness of 1-6 mu m were deposited on Al-foils and glass-ceramic substrates, by ion sputtering of targets of different metal/insulator contents. Structural characterization with X-ray and electron diffraction as well as transmission electron microscopy revealed that the films are composed of isolated nanocrystalline bcc alpha-FeCo(Zr) alloy and insulating fcc CaF2 matrix. They grow in a columnar structure, where elongated metallic nanograins are arranged on top of each other within the columns almost normal to the substrate surface. Mossbauer spectroscopy and magnetometry results indicate that their easy magnetization axes are oriented at an angle of 65 degrees-74 degrees to the surface in films with x between 46 and 74, above the electrical percolation threshold, which is attributed to the growth-induced shape anisotropy. Interatomic distances characteristic for metallic state of alpha-FeCo(Zr) nanograins were revealed by X-ray Absorption Spectroscopy. The results show a lack of surface oxidation of the alloy nanograins, so the growth-induced orientation of nanograins in the films cannot be attributed to this effect. The study is among the first to report a growth-induced non-planar magnetic anisotropy in metal/insulator granular films above the percolation threshold and to reveal the origin of it. (C) 2014 AIP Publishing LLC.",
journal = "Journal of Applied Physics",
title = "Growth-induced non-planar magnetic anisotropy in FeCoZr-CaF2 nanogranular films: Structural and magnetic characterization",
volume = "116",
number = "4",
doi = "10.1063/1.4891016"
}

Kasiuk, J. V., Fedotova, J. A., Przewoznik, J., Zukrowski, J., Sikora, M., Kapusta, C., Grce, A.,& Milosavljević, M.. (2014). Growth-induced non-planar magnetic anisotropy in FeCoZr-CaF2 nanogranular films: Structural and magnetic characterization. in Journal of Applied Physics, 116(4).
https://doi.org/10.1063/1.4891016

Kasiuk JV, Fedotova JA, Przewoznik J, Zukrowski J, Sikora M, Kapusta C, Grce A, Milosavljević M. Growth-induced non-planar magnetic anisotropy in FeCoZr-CaF2 nanogranular films: Structural and magnetic characterization. in Journal of Applied Physics. 2014;116(4).
doi:10.1063/1.4891016 .

Kasiuk, J. V., Fedotova, J. A., Przewoznik, J., Zukrowski, J., Sikora, M., Kapusta, Cz, Grce, Ana, Milosavljević, Momir, "Growth-induced non-planar magnetic anisotropy in FeCoZr-CaF2 nanogranular films: Structural and magnetic characterization" in Journal of Applied Physics, 116, no. 4 (2014),
https://doi.org/10.1063/1.4891016 . .

TY  - CONF
AU  - Fedotova, J.
AU  - Kasiuk, J.
AU  - Milosavljević, Momir
AU  - Przewoznik, J.
AU  - Kapusta, Cz.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7031
AB  - The paper summarizes features in magnetic states of nanocomposite films like superparamagnetic relaxation, exchange interactions, enhanced magnetic anisotropy, originating from their granular nanostructure and related to various combinations of metallic (FeCo(Zr) alloy) nanoparticles and insulating (Al2O3, PbZrTiO3, CaF2) matrix as well as films deposition regimes.
C3  - Physics, Chemistry and Applications of Nanostructures: Reviews and Short Notes
T1  - Nanoscale Characterization of Self-Ordered Metal-Insulator Nanostructured Magnetic Films
SP  - 50
EP  - 53
UR  - https://hdl.handle.net/21.15107/rcub_vinar_7031
ER  - 

@conference{
author = "Fedotova, J. and Kasiuk, J. and Milosavljević, Momir and Przewoznik, J. and Kapusta, Cz.",
year = "2013",
abstract = "The paper summarizes features in magnetic states of nanocomposite films like superparamagnetic relaxation, exchange interactions, enhanced magnetic anisotropy, originating from their granular nanostructure and related to various combinations of metallic (FeCo(Zr) alloy) nanoparticles and insulating (Al2O3, PbZrTiO3, CaF2) matrix as well as films deposition regimes.",
journal = "Physics, Chemistry and Applications of Nanostructures: Reviews and Short Notes",
title = "Nanoscale Characterization of Self-Ordered Metal-Insulator Nanostructured Magnetic Films",
pages = "50-53",
url = "https://hdl.handle.net/21.15107/rcub_vinar_7031"
}

Fedotova, J., Kasiuk, J., Milosavljević, M., Przewoznik, J.,& Kapusta, Cz.. (2013). Nanoscale Characterization of Self-Ordered Metal-Insulator Nanostructured Magnetic Films. in Physics, Chemistry and Applications of Nanostructures: Reviews and Short Notes, 50-53.
https://hdl.handle.net/21.15107/rcub_vinar_7031

Fedotova J, Kasiuk J, Milosavljević M, Przewoznik J, Kapusta C. Nanoscale Characterization of Self-Ordered Metal-Insulator Nanostructured Magnetic Films. in Physics, Chemistry and Applications of Nanostructures: Reviews and Short Notes. 2013;:50-53.
https://hdl.handle.net/21.15107/rcub_vinar_7031 .

Fedotova, J., Kasiuk, J., Milosavljević, Momir, Przewoznik, J., Kapusta, Cz., "Nanoscale Characterization of Self-Ordered Metal-Insulator Nanostructured Magnetic Films" in Physics, Chemistry and Applications of Nanostructures: Reviews and Short Notes (2013):50-53,
https://hdl.handle.net/21.15107/rcub_vinar_7031 .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Toprek, Dragan
AU  - Obradović, Marko O.
AU  - Grce, Ana
AU  - Peruško, Davor
AU  - Dražić, Goran
AU  - Kovač, Janez
AU  - Homewood, Kevin P.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5335
AB  - The effects of Ar ion irradiation on interfacial reactions induced in Ni/Ti multilayers were investigated. Structures consisting of 10 alternate Ni (similar to 26 nm) and Ti (similar to 20 nm) layers of a total thickness similar to 230 nm were deposited by ion sputtering on Si (1 0 0) wafers. Argon irradiations were done at 180 keV, to the doses of 1-6 x 10(16) ions/cm(2), the samples being held at room temperature. The projected implanted ion range is 86 +/- 36 nm, maximum energy loss is closer to the surface, and maximum displacements per atom (dpa) from 47 to 284 for Ni and 26 to 156 for Ti. Characterizations of samples were performed by transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). It is shown that ion irradiation induced a progressed intermixing in the mostly affected zone already for the lowest dose, the thickness of the mix increasing linearly with the irradiation dose. The mixed phase is fully amorphous, starting with a higher concentration of Ni (which is the diffusing species) from the initial stages, and saturating at Ni: Ti similar to 66:34. A thick amorphous layer (similar to 127 nm) formed towards the surface region of the structure for the irradiation dose of 4 x 10(16) ions/cm(2) remains stable with increasing the dose to 6 x 10(16) ions/cm(2), which introduces up to 6-7 at.% of Ar within the mix. The results are discussed in light of the existing models. They can be interesting for introducing a selective and controlled solid-state reaction and towards further studies of ion irradiation stability of amorphous Ni-Ti phase. (C) 2013 Elsevier B.V. All rights reserved.
T2  - Applied Surface Science
T1  - Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers
VL  - 268
SP  - 516
EP  - 523
DO  - 10.1016/j.apsusc.2012.12.158
ER  - 

@article{
author = "Milosavljević, Momir and Toprek, Dragan and Obradović, Marko O. and Grce, Ana and Peruško, Davor and Dražić, Goran and Kovač, Janez and Homewood, Kevin P.",
year = "2013",
abstract = "The effects of Ar ion irradiation on interfacial reactions induced in Ni/Ti multilayers were investigated. Structures consisting of 10 alternate Ni (similar to 26 nm) and Ti (similar to 20 nm) layers of a total thickness similar to 230 nm were deposited by ion sputtering on Si (1 0 0) wafers. Argon irradiations were done at 180 keV, to the doses of 1-6 x 10(16) ions/cm(2), the samples being held at room temperature. The projected implanted ion range is 86 +/- 36 nm, maximum energy loss is closer to the surface, and maximum displacements per atom (dpa) from 47 to 284 for Ni and 26 to 156 for Ti. Characterizations of samples were performed by transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). It is shown that ion irradiation induced a progressed intermixing in the mostly affected zone already for the lowest dose, the thickness of the mix increasing linearly with the irradiation dose. The mixed phase is fully amorphous, starting with a higher concentration of Ni (which is the diffusing species) from the initial stages, and saturating at Ni: Ti similar to 66:34. A thick amorphous layer (similar to 127 nm) formed towards the surface region of the structure for the irradiation dose of 4 x 10(16) ions/cm(2) remains stable with increasing the dose to 6 x 10(16) ions/cm(2), which introduces up to 6-7 at.% of Ar within the mix. The results are discussed in light of the existing models. They can be interesting for introducing a selective and controlled solid-state reaction and towards further studies of ion irradiation stability of amorphous Ni-Ti phase. (C) 2013 Elsevier B.V. All rights reserved.",
journal = "Applied Surface Science",
title = "Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers",
volume = "268",
pages = "516-523",
doi = "10.1016/j.apsusc.2012.12.158"
}

Milosavljević, M., Toprek, D., Obradović, M. O., Grce, A., Peruško, D., Dražić, G., Kovač, J.,& Homewood, K. P.. (2013). Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers. in Applied Surface Science, 268, 516-523.
https://doi.org/10.1016/j.apsusc.2012.12.158

Milosavljević M, Toprek D, Obradović MO, Grce A, Peruško D, Dražić G, Kovač J, Homewood KP. Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers. in Applied Surface Science. 2013;268:516-523.
doi:10.1016/j.apsusc.2012.12.158 .

Milosavljević, Momir, Toprek, Dragan, Obradović, Marko O., Grce, Ana, Peruško, Davor, Dražić, Goran, Kovač, Janez, Homewood, Kevin P., "Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers" in Applied Surface Science, 268 (2013):516-523,
https://doi.org/10.1016/j.apsusc.2012.12.158 . .

TY  - JOUR
AU  - Petrović, Suzana
AU  - Peruško, Davor
AU  - Mitrić, Miodrag
AU  - Kovač, Janez
AU  - Dražić, Goran
AU  - Gaković, Biljana M.
AU  - Homewood, Kevin P.
AU  - Milosavljević, Momir
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4839
AB  - Ion implantation and thermal annealing effects on composition and structure of Ni/Ti multilayer have been studied and reported in this paper. The thin films composed of five (Ni/Ti) bilayers were deposited by d.c. ion sputtering on (100) Si wafers to a total thickness of similar to 180 nm. Ion irradiations were performed by 180 keV Ar+ ions with fluence of 6 x 10(16) ions cm(-2). After deposition and implantation, the samples were annealed at 400 degrees C for 30 min in an inert ambient. Composition and structural characterizations were performed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Annealing of as-deposited samples at 400 degrees C induces a progressed interaction between Ni and Ti layers with the initial formation of NiTi alloy phase. Progressed alloying was achieved for the ion fluence of 6 x 10(16) ions cm(-2) and the formed structure is composed of NiTi compound, only at depth around the projected ion range. In the deeper layers, beyond the projected range of implanted ions, the diffusion of Ni atoms can lead to solid state amorphization. Subsequent annealing at 400 degrees C for 30 min enabled enhanced interaction between intermixed Ni and Ti layers, and in the layers close to the Si substrate the conditions for the formation of intermetallic compound are created. (c) 2012 Elsevier Ltd. All rights reserved.
T2  - Intermetallics
T1  - Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing
VL  - 25
SP  - 27
EP  - 33
DO  - 10.1016/j.intermet.2012.02.007
ER  - 

@article{
author = "Petrović, Suzana and Peruško, Davor and Mitrić, Miodrag and Kovač, Janez and Dražić, Goran and Gaković, Biljana M. and Homewood, Kevin P. and Milosavljević, Momir",
year = "2012",
abstract = "Ion implantation and thermal annealing effects on composition and structure of Ni/Ti multilayer have been studied and reported in this paper. The thin films composed of five (Ni/Ti) bilayers were deposited by d.c. ion sputtering on (100) Si wafers to a total thickness of similar to 180 nm. Ion irradiations were performed by 180 keV Ar+ ions with fluence of 6 x 10(16) ions cm(-2). After deposition and implantation, the samples were annealed at 400 degrees C for 30 min in an inert ambient. Composition and structural characterizations were performed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Annealing of as-deposited samples at 400 degrees C induces a progressed interaction between Ni and Ti layers with the initial formation of NiTi alloy phase. Progressed alloying was achieved for the ion fluence of 6 x 10(16) ions cm(-2) and the formed structure is composed of NiTi compound, only at depth around the projected ion range. In the deeper layers, beyond the projected range of implanted ions, the diffusion of Ni atoms can lead to solid state amorphization. Subsequent annealing at 400 degrees C for 30 min enabled enhanced interaction between intermixed Ni and Ti layers, and in the layers close to the Si substrate the conditions for the formation of intermetallic compound are created. (c) 2012 Elsevier Ltd. All rights reserved.",
journal = "Intermetallics",
title = "Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing",
volume = "25",
pages = "27-33",
doi = "10.1016/j.intermet.2012.02.007"
}

Petrović, S., Peruško, D., Mitrić, M., Kovač, J., Dražić, G., Gaković, B. M., Homewood, K. P.,& Milosavljević, M.. (2012). Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing. in Intermetallics, 25, 27-33.
https://doi.org/10.1016/j.intermet.2012.02.007

Petrović S, Peruško D, Mitrić M, Kovač J, Dražić G, Gaković BM, Homewood KP, Milosavljević M. Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing. in Intermetallics. 2012;25:27-33.
doi:10.1016/j.intermet.2012.02.007 .

Petrović, Suzana, Peruško, Davor, Mitrić, Miodrag, Kovač, Janez, Dražić, Goran, Gaković, Biljana M., Homewood, Kevin P., Milosavljević, Momir, "Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing" in Intermetallics, 25 (2012):27-33,
https://doi.org/10.1016/j.intermet.2012.02.007 . .

TY  - JOUR
AU  - Peruško, Davor
AU  - Petrović, Suzana
AU  - Kovač, Janez
AU  - Stojanović, Zoran A.
AU  - Panjan, Matjaž
AU  - Obradović, Marko O.
AU  - Milosavljević, Momir
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4769
AB  - In this study, multilayered structures consisting of eight (Al/Ti) bilayers deposited by d.c. ion sputtering onto Si (100) wafers, to a total thickness of similar to 300 nm were treated in air with a picosecond-pulsed Nd:YAG laser in a defocused regime. Irradiation was done with 200 successive pulses, at 1,064-nm wavelength, energy per pulse 15 mJ, the incidence angle of similar to 45 degrees, covering an area of 2-mm in diameter. The samples were analyzed by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. It was found that laser irradiation-induced melting and a progressed Al-Ti nanoalloying within the top four bilayers (up to a depth of similar to 150 nm), while the underlying part of the multilayered structure remained intact. Another interesting result is that of a regularly rippled surface topography (similar to 1.4-mu m period and 100-nm amplitude) developed throughout the zone of the melted and reacted material.
T2  - Journal of Materials Science
T1  - Laser-induced formation of intermetallics in multilayered Al/Ti nano-structures
VL  - 47
IS  - 10
SP  - 4488
EP  - 4495
DO  - 10.1007/s10853-012-6311-8
ER  - 

@article{
author = "Peruško, Davor and Petrović, Suzana and Kovač, Janez and Stojanović, Zoran A. and Panjan, Matjaž and Obradović, Marko O. and Milosavljević, Momir",
year = "2012",
abstract = "In this study, multilayered structures consisting of eight (Al/Ti) bilayers deposited by d.c. ion sputtering onto Si (100) wafers, to a total thickness of similar to 300 nm were treated in air with a picosecond-pulsed Nd:YAG laser in a defocused regime. Irradiation was done with 200 successive pulses, at 1,064-nm wavelength, energy per pulse 15 mJ, the incidence angle of similar to 45 degrees, covering an area of 2-mm in diameter. The samples were analyzed by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. It was found that laser irradiation-induced melting and a progressed Al-Ti nanoalloying within the top four bilayers (up to a depth of similar to 150 nm), while the underlying part of the multilayered structure remained intact. Another interesting result is that of a regularly rippled surface topography (similar to 1.4-mu m period and 100-nm amplitude) developed throughout the zone of the melted and reacted material.",
journal = "Journal of Materials Science",
title = "Laser-induced formation of intermetallics in multilayered Al/Ti nano-structures",
volume = "47",
number = "10",
pages = "4488-4495",
doi = "10.1007/s10853-012-6311-8"
}

Peruško, D., Petrović, S., Kovač, J., Stojanović, Z. A., Panjan, M., Obradović, M. O.,& Milosavljević, M.. (2012). Laser-induced formation of intermetallics in multilayered Al/Ti nano-structures. in Journal of Materials Science, 47(10), 4488-4495.
https://doi.org/10.1007/s10853-012-6311-8

Peruško D, Petrović S, Kovač J, Stojanović ZA, Panjan M, Obradović MO, Milosavljević M. Laser-induced formation of intermetallics in multilayered Al/Ti nano-structures. in Journal of Materials Science. 2012;47(10):4488-4495.
doi:10.1007/s10853-012-6311-8 .

Peruško, Davor, Petrović, Suzana, Kovač, Janez, Stojanović, Zoran A., Panjan, Matjaž, Obradović, Marko O., Milosavljević, Momir, "Laser-induced formation of intermetallics in multilayered Al/Ti nano-structures" in Journal of Materials Science, 47, no. 10 (2012):4488-4495,
https://doi.org/10.1007/s10853-012-6311-8 . .

TY  - JOUR
AU  - Berhanuddin, D. D.
AU  - Lourenco, M. A.
AU  - Jeynes, C.
AU  - Milosavljević, Momir
AU  - Gwilliam, R. M.
AU  - Homewood, Kevin P.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5185
AB  - We investigate a new approach for efficient generation of the lasing G-centre (carbon substitutional-silicon self-interstitial complex) which crucially is fully compatible with standard silicon ultra-large-scale integration technology. Silicon wafers were implanted with carbon and irradiated with high energy protons to produce self-interstitials that are crucial in the formation of the G-centre. Rutherford backscattering spectrometry (RBS) and transmission electron microscopy were used to study the structure of the post-implanted silicon samples and to investigate the behaviour of the self-interstitials and damage introduced by the carbon and proton implantation. The effect of substrate pre-amorphisation on the G-centre luminescence intensity and formation properties was also investigated by implanting Ge prior to the carbon and proton irradiation. Photoluminescence measurements and RBS results show a significantly higher G-centre peak intensity and silicon yield, respectively, in samples without pre-amorphisation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766390]
T2  - Journal of Applied Physics
T1  - Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre
VL  - 112
IS  - 10
DO  - 10.1063/1.4766390
ER  - 

@article{
author = "Berhanuddin, D. D. and Lourenco, M. A. and Jeynes, C. and Milosavljević, Momir and Gwilliam, R. M. and Homewood, Kevin P.",
year = "2012",
abstract = "We investigate a new approach for efficient generation of the lasing G-centre (carbon substitutional-silicon self-interstitial complex) which crucially is fully compatible with standard silicon ultra-large-scale integration technology. Silicon wafers were implanted with carbon and irradiated with high energy protons to produce self-interstitials that are crucial in the formation of the G-centre. Rutherford backscattering spectrometry (RBS) and transmission electron microscopy were used to study the structure of the post-implanted silicon samples and to investigate the behaviour of the self-interstitials and damage introduced by the carbon and proton implantation. The effect of substrate pre-amorphisation on the G-centre luminescence intensity and formation properties was also investigated by implanting Ge prior to the carbon and proton irradiation. Photoluminescence measurements and RBS results show a significantly higher G-centre peak intensity and silicon yield, respectively, in samples without pre-amorphisation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766390]",
journal = "Journal of Applied Physics",
title = "Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre",
volume = "112",
number = "10",
doi = "10.1063/1.4766390"
}

Berhanuddin, D. D., Lourenco, M. A., Jeynes, C., Milosavljević, M., Gwilliam, R. M.,& Homewood, K. P.. (2012). Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre. in Journal of Applied Physics, 112(10).
https://doi.org/10.1063/1.4766390

Berhanuddin DD, Lourenco MA, Jeynes C, Milosavljević M, Gwilliam RM, Homewood KP. Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre. in Journal of Applied Physics. 2012;112(10).
doi:10.1063/1.4766390 .

Berhanuddin, D. D., Lourenco, M. A., Jeynes, C., Milosavljević, Momir, Gwilliam, R. M., Homewood, Kevin P., "Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre" in Journal of Applied Physics, 112, no. 10 (2012),
https://doi.org/10.1063/1.4766390 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Milinović, Velimir
AU  - Peruško, Davor
AU  - Grce, Ana
AU  - Stojanović, Mirjana
AU  - Pjević, Dejan J.
AU  - Mitrić, Miodrag
AU  - Kovač, Janez
AU  - Homewood, Kevin P.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4487
AB  - The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (similar to 23 nm) and Ti (similar to 17 nm) layers of a total thickness similar to 200 nm. They were irradiated at room temperature with 200 key Ar(+), to the fluences from 5 x 10(15) to 2 x 10(16) ions/cm(2). The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom similar to 130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy Delta H(f) = +2 kJ/mol). It is estimated that up to similar to 5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures. (C) 2011 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation
VL  - 269
IS  - 19
SP  - 2090
EP  - 2097
DO  - 10.1016/j.nimb.2011.06.017
ER  - 

@article{
author = "Milosavljević, Momir and Milinović, Velimir and Peruško, Davor and Grce, Ana and Stojanović, Mirjana and Pjević, Dejan J. and Mitrić, Miodrag and Kovač, Janez and Homewood, Kevin P.",
year = "2011",
abstract = "The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (similar to 23 nm) and Ti (similar to 17 nm) layers of a total thickness similar to 200 nm. They were irradiated at room temperature with 200 key Ar(+), to the fluences from 5 x 10(15) to 2 x 10(16) ions/cm(2). The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom similar to 130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy Delta H(f) = +2 kJ/mol). It is estimated that up to similar to 5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures. (C) 2011 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation",
volume = "269",
number = "19",
pages = "2090-2097",
doi = "10.1016/j.nimb.2011.06.017"
}

Milosavljević, M., Milinović, V., Peruško, D., Grce, A., Stojanović, M., Pjević, D. J., Mitrić, M., Kovač, J.,& Homewood, K. P.. (2011). Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269(19), 2090-2097.
https://doi.org/10.1016/j.nimb.2011.06.017

Milosavljević M, Milinović V, Peruško D, Grce A, Stojanović M, Pjević DJ, Mitrić M, Kovač J, Homewood KP. Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2011;269(19):2090-2097.
doi:10.1016/j.nimb.2011.06.017 .

Milosavljević, Momir, Milinović, Velimir, Peruško, Davor, Grce, Ana, Stojanović, Mirjana, Pjević, Dejan J., Mitrić, Miodrag, Kovač, Janez, Homewood, Kevin P., "Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269, no. 19 (2011):2090-2097,
https://doi.org/10.1016/j.nimb.2011.06.017 . .

TY  - JOUR
AU  - Fedotova, J. A.
AU  - Przewoznik, J.
AU  - Kapusta, Cz
AU  - Milosavljević, Momir
AU  - Kasiuk, J. V.
AU  - Zukrowski, J.
AU  - Sikora, M.
AU  - Maximenko, A. A.
AU  - Szepietowska, D.
AU  - Homewood, Kevin P.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4609
AB  - Temperature and magnetic field dependences of electrical conductivity are systematically studied in granular films (Fe45Co45Zr10)(x)(Al2O3)(100-x) (28 LT = x LT = 64) containing crystalline metallic alpha-FeCo-based nanoalloy cores encapsulated in an amorphous oxide shell embedded in an amorphous Al2O3 matrix. Formation of metallic core-oxide shell nanogranules is confirmed by transmission electron microscopy (TEM) and HRTEM. The structure of core and shell is governed with the difference in the oxidation states of Fe and Co ions investigated with EXAFS, XANES and Mossbauer spectroscopy. A considerable negative magnetoresistance (MR) effect of spin-dependent nature is observed in the whole range of x values. Its increase with decreasing temperature is correlated with the magnetic saturation of superparamagnetic metallic nanogranules. The enhanced MR effect in core-shell granular films is related to the percolation of oxide shells and their influence through spin filtering processes. A considerable high field MR at low temperatures and the resulting deviation of MR and squared magnetization are attributed to a magnetic randomness and/or strong magnetic anisotropy of the magnetic oxide shell.
T2  - Journal of Physics. D: Applied Physics
T1  - Magnetoresistance in FeCoZr-Al2O3 nanocomposite films containing metal core-oxide shell nanogranules
VL  - 44
IS  - 49
DO  - 10.1088/0022-3727/44/49/495001
ER  - 

@article{
author = "Fedotova, J. A. and Przewoznik, J. and Kapusta, Cz and Milosavljević, Momir and Kasiuk, J. V. and Zukrowski, J. and Sikora, M. and Maximenko, A. A. and Szepietowska, D. and Homewood, Kevin P.",
year = "2011",
abstract = "Temperature and magnetic field dependences of electrical conductivity are systematically studied in granular films (Fe45Co45Zr10)(x)(Al2O3)(100-x) (28 LT = x LT = 64) containing crystalline metallic alpha-FeCo-based nanoalloy cores encapsulated in an amorphous oxide shell embedded in an amorphous Al2O3 matrix. Formation of metallic core-oxide shell nanogranules is confirmed by transmission electron microscopy (TEM) and HRTEM. The structure of core and shell is governed with the difference in the oxidation states of Fe and Co ions investigated with EXAFS, XANES and Mossbauer spectroscopy. A considerable negative magnetoresistance (MR) effect of spin-dependent nature is observed in the whole range of x values. Its increase with decreasing temperature is correlated with the magnetic saturation of superparamagnetic metallic nanogranules. The enhanced MR effect in core-shell granular films is related to the percolation of oxide shells and their influence through spin filtering processes. A considerable high field MR at low temperatures and the resulting deviation of MR and squared magnetization are attributed to a magnetic randomness and/or strong magnetic anisotropy of the magnetic oxide shell.",
journal = "Journal of Physics. D: Applied Physics",
title = "Magnetoresistance in FeCoZr-Al2O3 nanocomposite films containing metal core-oxide shell nanogranules",
volume = "44",
number = "49",
doi = "10.1088/0022-3727/44/49/495001"
}

Fedotova, J. A., Przewoznik, J., Kapusta, C., Milosavljević, M., Kasiuk, J. V., Zukrowski, J., Sikora, M., Maximenko, A. A., Szepietowska, D.,& Homewood, K. P.. (2011). Magnetoresistance in FeCoZr-Al2O3 nanocomposite films containing metal core-oxide shell nanogranules. in Journal of Physics. D: Applied Physics, 44(49).
https://doi.org/10.1088/0022-3727/44/49/495001

Fedotova JA, Przewoznik J, Kapusta C, Milosavljević M, Kasiuk JV, Zukrowski J, Sikora M, Maximenko AA, Szepietowska D, Homewood KP. Magnetoresistance in FeCoZr-Al2O3 nanocomposite films containing metal core-oxide shell nanogranules. in Journal of Physics. D: Applied Physics. 2011;44(49).
doi:10.1088/0022-3727/44/49/495001 .

Fedotova, J. A., Przewoznik, J., Kapusta, Cz, Milosavljević, Momir, Kasiuk, J. V., Zukrowski, J., Sikora, M., Maximenko, A. A., Szepietowska, D., Homewood, Kevin P., "Magnetoresistance in FeCoZr-Al2O3 nanocomposite films containing metal core-oxide shell nanogranules" in Journal of Physics. D: Applied Physics, 44, no. 49 (2011),
https://doi.org/10.1088/0022-3727/44/49/495001 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Lourenco, M. A.
AU  - Gwilliam, R. M.
AU  - Homewood, Kevin P.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4454
AB  - Microstructural and electroluminescence measurements are carried out on boron implanted dislocation engineered silicon light emitting diodes (LEDs) co-implanted with the rare earth thulium to provide wavelength tuning in the infra-red. Silicon LEDs operating in the range from 1.1-1.35 mu m are fabricated by co-implantation of boron and thulium into n-type Si (100) wafers and subsequently rapid thermally annealed to activate the implants and to engineer the dislocation loop array that is crucial in allowing light emission. Ohmic contacts are applied to the p and n regions to form conventional p-n junction LEDs. Electroluminescence is obtained under normal forward biasing of the devices. The influence of implantation sequence (B or Tm first), ion dose, and the post-implantation annealing on the microstructure and electroluminescence from the devices is studied. A clear role of the heavy-ion Tm co-implant in significantly modifying the boron induced dislocation loop array distribution is demonstrated. We also identify the development of dislocation loops under thermal spikes upon heavy ion (Tm) implantation into Si. The results contribute to a better understanding of the basic processes involved in fabrication and functioning of co-implanted devices, toward achieving higher light emission efficiency. VC 2011 American Institute of Physics. [doi:10.1063/1.3614036]
T2  - Journal of Applied Physics
T1  - Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes
VL  - 110
IS  - 3
DO  - 10.1063/1.3614036
ER  - 

@article{
author = "Milosavljević, Momir and Lourenco, M. A. and Gwilliam, R. M. and Homewood, Kevin P.",
year = "2011",
abstract = "Microstructural and electroluminescence measurements are carried out on boron implanted dislocation engineered silicon light emitting diodes (LEDs) co-implanted with the rare earth thulium to provide wavelength tuning in the infra-red. Silicon LEDs operating in the range from 1.1-1.35 mu m are fabricated by co-implantation of boron and thulium into n-type Si (100) wafers and subsequently rapid thermally annealed to activate the implants and to engineer the dislocation loop array that is crucial in allowing light emission. Ohmic contacts are applied to the p and n regions to form conventional p-n junction LEDs. Electroluminescence is obtained under normal forward biasing of the devices. The influence of implantation sequence (B or Tm first), ion dose, and the post-implantation annealing on the microstructure and electroluminescence from the devices is studied. A clear role of the heavy-ion Tm co-implant in significantly modifying the boron induced dislocation loop array distribution is demonstrated. We also identify the development of dislocation loops under thermal spikes upon heavy ion (Tm) implantation into Si. The results contribute to a better understanding of the basic processes involved in fabrication and functioning of co-implanted devices, toward achieving higher light emission efficiency. VC 2011 American Institute of Physics. [doi:10.1063/1.3614036]",
journal = "Journal of Applied Physics",
title = "Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes",
volume = "110",
number = "3",
doi = "10.1063/1.3614036"
}

Milosavljević, M., Lourenco, M. A., Gwilliam, R. M.,& Homewood, K. P.. (2011). Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes. in Journal of Applied Physics, 110(3).
https://doi.org/10.1063/1.3614036

Milosavljević M, Lourenco MA, Gwilliam RM, Homewood KP. Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes. in Journal of Applied Physics. 2011;110(3).
doi:10.1063/1.3614036 .

Milosavljević, Momir, Lourenco, M. A., Gwilliam, R. M., Homewood, Kevin P., "Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes" in Journal of Applied Physics, 110, no. 3 (2011),
https://doi.org/10.1063/1.3614036 . .