Ministry of Science, Technology and Development of Republic Serbia [Projects 2006 and 2016]

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Ministry of Science, Technology and Development of Republic Serbia [Projects 2006 and 2016]

Authors

Publications

Radioactive resistance of some commercial memory components

Lončar, Boris; Stanković, Srboljub; Osmokrović, Predrag

(IEEE : Institute of Electrical and Electronics Engineers, 2004)

TY  - CONF
AU  - Lončar, Boris
AU  - Stanković, Srboljub
AU  - Osmokrović, Predrag
PY  - 2004
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12165
AB  - The goal of this paper is to examine and investigate comparative analysis the resistance of some commercial EPROM and EEPROM components under the influence of gamma radiation. Experimental results show that EPROM components have better radioactive reliability than EEPROM components. Also, the EPROM changes are reversible and after erasing process and reprogramming all EPROM components are functional. On the other hand EEPROM changes are irreversible and under the influence of gamma radiation all EEPROM components became permanently nonfunctional. These results are considered relevant for the use of these components in both military industry and space technology. The obtained results are analyzed and explained theoretically.
PB  - IEEE : Institute of Electrical and Electronics Engineers
C3  - 24th International conference on Microelectronics (MIEL 2004) : Proceedings
T1  - Radioactive resistance of some commercial memory components
VL  - 2
SP  - 705
EP  - 708
DO  - 10.1109/ICMEL.2004.1314928
ER  - 
@conference{
author = "Lončar, Boris and Stanković, Srboljub and Osmokrović, Predrag",
year = "2004",
abstract = "The goal of this paper is to examine and investigate comparative analysis the resistance of some commercial EPROM and EEPROM components under the influence of gamma radiation. Experimental results show that EPROM components have better radioactive reliability than EEPROM components. Also, the EPROM changes are reversible and after erasing process and reprogramming all EPROM components are functional. On the other hand EEPROM changes are irreversible and under the influence of gamma radiation all EEPROM components became permanently nonfunctional. These results are considered relevant for the use of these components in both military industry and space technology. The obtained results are analyzed and explained theoretically.",
publisher = "IEEE : Institute of Electrical and Electronics Engineers",
journal = "24th International conference on Microelectronics (MIEL 2004) : Proceedings",
title = "Radioactive resistance of some commercial memory components",
volume = "2",
pages = "705-708",
doi = "10.1109/ICMEL.2004.1314928"
}
Lončar, B., Stanković, S.,& Osmokrović, P.. (2004). Radioactive resistance of some commercial memory components. in 24th International conference on Microelectronics (MIEL 2004) : Proceedings
IEEE : Institute of Electrical and Electronics Engineers., 2, 705-708.
https://doi.org/10.1109/ICMEL.2004.1314928
Lončar B, Stanković S, Osmokrović P. Radioactive resistance of some commercial memory components. in 24th International conference on Microelectronics (MIEL 2004) : Proceedings. 2004;2:705-708.
doi:10.1109/ICMEL.2004.1314928 .
Lončar, Boris, Stanković, Srboljub, Osmokrović, Predrag, "Radioactive resistance of some commercial memory components" in 24th International conference on Microelectronics (MIEL 2004) : Proceedings, 2 (2004):705-708,
https://doi.org/10.1109/ICMEL.2004.1314928 . .