TY  - JOUR
AU  - Ljubenov, Vladan
AU  - Simović, Rodoljub D.
AU  - Marković, Srpko
AU  - Ilić, Radovan D.
PY  - 2010
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4120
AB  - The possibility of expressing the total particle and energy reflection coefficients of low-energy photons in the form of universal functions valid for different shielding materials is investigated in this paper. The analysis is based on the results of Monte Carlo simulations of photon reflection by using MCNP, FOTELP, and PENELOPE codes. The normal incidence of the narrow monoenergetic photon beam of the unit intensity and of initial energies from 20 keV up to 100 keV is considered, and particle and energy reflection coefficients from the plane homogenous targets of water, aluminum, and iron are determined and compared. The representations of albedo coefficients on the initial photon energy, on the probability of large-angle photon scattering, and on the mean number of photon scatterings are examined. It is found out that only the rescaled albedo coefficients dependent on the mean number of photon scatterings have the form of universal functions and these functions are determined by applying the least square method.
T2  - Nuclear technology and radiation protection
T1  - Total Reflection Coefficients of Low-Energy Photons Presented as Universal Functions
VL  - 25
IS  - 2
SP  - 100
EP  - 106
DO  - 10.2298/NTRP1002100L
ER  - 

@article{
author = "Ljubenov, Vladan and Simović, Rodoljub D. and Marković, Srpko and Ilić, Radovan D.",
year = "2010",
abstract = "The possibility of expressing the total particle and energy reflection coefficients of low-energy photons in the form of universal functions valid for different shielding materials is investigated in this paper. The analysis is based on the results of Monte Carlo simulations of photon reflection by using MCNP, FOTELP, and PENELOPE codes. The normal incidence of the narrow monoenergetic photon beam of the unit intensity and of initial energies from 20 keV up to 100 keV is considered, and particle and energy reflection coefficients from the plane homogenous targets of water, aluminum, and iron are determined and compared. The representations of albedo coefficients on the initial photon energy, on the probability of large-angle photon scattering, and on the mean number of photon scatterings are examined. It is found out that only the rescaled albedo coefficients dependent on the mean number of photon scatterings have the form of universal functions and these functions are determined by applying the least square method.",
journal = "Nuclear technology and radiation protection",
title = "Total Reflection Coefficients of Low-Energy Photons Presented as Universal Functions",
volume = "25",
number = "2",
pages = "100-106",
doi = "10.2298/NTRP1002100L"
}

Ljubenov, V., Simović, R. D., Marković, S.,& Ilić, R. D.. (2010). Total Reflection Coefficients of Low-Energy Photons Presented as Universal Functions. in Nuclear technology and radiation protection, 25(2), 100-106.
https://doi.org/10.2298/NTRP1002100L

Ljubenov V, Simović RD, Marković S, Ilić RD. Total Reflection Coefficients of Low-Energy Photons Presented as Universal Functions. in Nuclear technology and radiation protection. 2010;25(2):100-106.
doi:10.2298/NTRP1002100L .

Ljubenov, Vladan, Simović, Rodoljub D., Marković, Srpko, Ilić, Radovan D., "Total Reflection Coefficients of Low-Energy Photons Presented as Universal Functions" in Nuclear technology and radiation protection, 25, no. 2 (2010):100-106,
https://doi.org/10.2298/NTRP1002100L . .

TY  - JOUR
AU  - Stanković, Koviljka
AU  - Vujisić, Miloš Lj.
AU  - Dolicanin, Edin
PY  - 2009
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3251
AB  - The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.
T2  - Nuclear technology and radiation protection
T1  - Reliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiation
VL  - 24
IS  - 2
SP  - 132
EP  - 137
DO  - 10.2298/NTRP0902132S
ER  - 

@article{
author = "Stanković, Koviljka and Vujisić, Miloš Lj. and Dolicanin, Edin",
year = "2009",
abstract = "The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.",
journal = "Nuclear technology and radiation protection",
title = "Reliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiation",
volume = "24",
number = "2",
pages = "132-137",
doi = "10.2298/NTRP0902132S"
}

Stanković, K., Vujisić, M. Lj.,& Dolicanin, E.. (2009). Reliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiation. in Nuclear technology and radiation protection, 24(2), 132-137.
https://doi.org/10.2298/NTRP0902132S

Stanković K, Vujisić ML, Dolicanin E. Reliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiation. in Nuclear technology and radiation protection. 2009;24(2):132-137.
doi:10.2298/NTRP0902132S .

Stanković, Koviljka, Vujisić, Miloš Lj., Dolicanin, Edin, "Reliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiation" in Nuclear technology and radiation protection, 24, no. 2 (2009):132-137,
https://doi.org/10.2298/NTRP0902132S . .

TY  - JOUR
AU  - Vujisić, Miloš Lj.
AU  - Stanković, Koviljka
AU  - Vasić, Aleksandra
PY  - 2009
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3686
AB  - This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (EPROM) and Electrically Erasable Programmable Read Only Memory ((EPROM)-P-2) components exposed to gamma rays. The results obtained for CMOS-based EPROM (NM27C010) and (EPROM)-P-2 (NM93CS46) components provide the evidence that EPROMs have greater radiation hardness than (EPROMS)-P-2. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in (EPROMs)-P-2 are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure.
T2  - Nuclear technology and radiation protection
T1  - Comparison of Gamma Ray Effects on Eproms and (Eproms)-P-2
VL  - 24
IS  - 1
SP  - 61
EP  - 67
DO  - 10.2298/NTRP0901061V
ER  - 

@article{
author = "Vujisić, Miloš Lj. and Stanković, Koviljka and Vasić, Aleksandra",
year = "2009",
abstract = "This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (EPROM) and Electrically Erasable Programmable Read Only Memory ((EPROM)-P-2) components exposed to gamma rays. The results obtained for CMOS-based EPROM (NM27C010) and (EPROM)-P-2 (NM93CS46) components provide the evidence that EPROMs have greater radiation hardness than (EPROMS)-P-2. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in (EPROMs)-P-2 are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure.",
journal = "Nuclear technology and radiation protection",
title = "Comparison of Gamma Ray Effects on Eproms and (Eproms)-P-2",
volume = "24",
number = "1",
pages = "61-67",
doi = "10.2298/NTRP0901061V"
}

Vujisić, M. Lj., Stanković, K.,& Vasić, A.. (2009). Comparison of Gamma Ray Effects on Eproms and (Eproms)-P-2. in Nuclear technology and radiation protection, 24(1), 61-67.
https://doi.org/10.2298/NTRP0901061V

Vujisić ML, Stanković K, Vasić A. Comparison of Gamma Ray Effects on Eproms and (Eproms)-P-2. in Nuclear technology and radiation protection. 2009;24(1):61-67.
doi:10.2298/NTRP0901061V .

Vujisić, Miloš Lj., Stanković, Koviljka, Vasić, Aleksandra, "Comparison of Gamma Ray Effects on Eproms and (Eproms)-P-2" in Nuclear technology and radiation protection, 24, no. 1 (2009):61-67,
https://doi.org/10.2298/NTRP0901061V . .