TY  - JOUR
AU  - Chen, Binbin
AU  - Gauquelin, Nicolas
AU  - Jannis, Daen
AU  - Cunha, Daniel M.
AU  - Halisdemir, Ufuk
AU  - Piamonteze, Cinthia
AU  - Lee, Jin Hong
AU  - Belhadi, Jamal
AU  - Eltes, Felix
AU  - Abel, Stefan
AU  - Jovanović, Zoran
AU  - Spreitzer, Matjaž
AU  - Fompeyrine, Jean
AU  - Verbeeck, Johan
AU  - Bibes, Manuel
AU  - Huijben, Mark
AU  - Rijnders, Guus
AU  - Koster, Gertjan
PY  - 2020
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9759
AB  - Epitaxial growth of SrTiO3 (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO3/LaFeO3 SLs are synthesized on STO-buffered silicon (Si/STO) and STO single-crystal substrates, and their electronic properties are compared using dc transport and X-ray absorption spectroscopy. Both sets of SLs show a similar thickness-driven metal-to-insulator transition, albeit with resistivity and transition temperature modified by the different amounts of strain. In particular, the large tensile strain promotes a pronounced Ni (Formula presented.) orbital polarization for the SL grown on Si/STO, comparable to that reported for LaNiO3 SL epitaxially strained to DyScO3 substrate. Those results illustrate the ability to integrate oxide SLs on silicon with structure and property approaching their counterparts grown on STO single crystal, and also open up new prospects of strain engineering in functional oxides based on the Si platform. © 2020 The Authors. Advanced Materials published by Wiley-VCH GmbH
T2  - Advanced Materials
T1  - Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon
DO  - 10.1002/adma.202004995
ER  - 

@article{
author = "Chen, Binbin and Gauquelin, Nicolas and Jannis, Daen and Cunha, Daniel M. and Halisdemir, Ufuk and Piamonteze, Cinthia and Lee, Jin Hong and Belhadi, Jamal and Eltes, Felix and Abel, Stefan and Jovanović, Zoran and Spreitzer, Matjaž and Fompeyrine, Jean and Verbeeck, Johan and Bibes, Manuel and Huijben, Mark and Rijnders, Guus and Koster, Gertjan",
year = "2020",
abstract = "Epitaxial growth of SrTiO3 (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO3/LaFeO3 SLs are synthesized on STO-buffered silicon (Si/STO) and STO single-crystal substrates, and their electronic properties are compared using dc transport and X-ray absorption spectroscopy. Both sets of SLs show a similar thickness-driven metal-to-insulator transition, albeit with resistivity and transition temperature modified by the different amounts of strain. In particular, the large tensile strain promotes a pronounced Ni (Formula presented.) orbital polarization for the SL grown on Si/STO, comparable to that reported for LaNiO3 SL epitaxially strained to DyScO3 substrate. Those results illustrate the ability to integrate oxide SLs on silicon with structure and property approaching their counterparts grown on STO single crystal, and also open up new prospects of strain engineering in functional oxides based on the Si platform. © 2020 The Authors. Advanced Materials published by Wiley-VCH GmbH",
journal = "Advanced Materials",
title = "Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon",
doi = "10.1002/adma.202004995"
}

Chen, B., Gauquelin, N., Jannis, D., Cunha, D. M., Halisdemir, U., Piamonteze, C., Lee, J. H., Belhadi, J., Eltes, F., Abel, S., Jovanović, Z., Spreitzer, M., Fompeyrine, J., Verbeeck, J., Bibes, M., Huijben, M., Rijnders, G.,& Koster, G.. (2020). Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon. in Advanced Materials.
https://doi.org/10.1002/adma.202004995

Chen B, Gauquelin N, Jannis D, Cunha DM, Halisdemir U, Piamonteze C, Lee JH, Belhadi J, Eltes F, Abel S, Jovanović Z, Spreitzer M, Fompeyrine J, Verbeeck J, Bibes M, Huijben M, Rijnders G, Koster G. Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon. in Advanced Materials. 2020;.
doi:10.1002/adma.202004995 .

Chen, Binbin, Gauquelin, Nicolas, Jannis, Daen, Cunha, Daniel M., Halisdemir, Ufuk, Piamonteze, Cinthia, Lee, Jin Hong, Belhadi, Jamal, Eltes, Felix, Abel, Stefan, Jovanović, Zoran, Spreitzer, Matjaž, Fompeyrine, Jean, Verbeeck, Johan, Bibes, Manuel, Huijben, Mark, Rijnders, Guus, Koster, Gertjan, "Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon" in Advanced Materials (2020),
https://doi.org/10.1002/adma.202004995 . .