TY  - JOUR
AU  - Vasco, H. A.
AU  - Hlatshwayo, Thulani Thokozani
AU  - Motloung, Setumo Victor
AU  - Mlambo, Mbuso
AU  - Mwankemwa, Benard S.
AU  - Petrović, Srđan M.
AU  - Skuratov, Vladimir A.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8056
AB  - Sintered TiN were implanted with Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 at room temperature (RT) and others were co-irradiated with Xe ions of 167 MeV to a fluence of 3.4 × 10 14 cm −2 and Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 also at RT, successively. Both samples were isochronally annealed at temperatures ranging from 1100 to 1500 °C. Both irradiations caused no amorphization of the sintered TiN, however more defects were retained in the samples implanted with only Xe (360 keV) ions. Annealing of defects retained after irradiations were found to be faster in the co-irradiated samples. The migration behavior of implanted Xe was explained by trapping and de-trapping by defects at temperatures below 1200 °C while at temperatures above 1200 °C, it was dominated by grain boundary diffusion, in the un-irradiated samples. In the co-irradiated samples, Xe migrated via fast grain boundaries.
T2  - Vacuum
T1  - Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN
VL  - 163
SP  - 59
EP  - 68
DO  - 10.1016/j.vacuum.2019.01.054
ER  - 

@article{
author = "Vasco, H. A. and Hlatshwayo, Thulani Thokozani and Motloung, Setumo Victor and Mlambo, Mbuso and Mwankemwa, Benard S. and Petrović, Srđan M. and Skuratov, Vladimir A.",
year = "2019",
abstract = "Sintered TiN were implanted with Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 at room temperature (RT) and others were co-irradiated with Xe ions of 167 MeV to a fluence of 3.4 × 10 14 cm −2 and Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 also at RT, successively. Both samples were isochronally annealed at temperatures ranging from 1100 to 1500 °C. Both irradiations caused no amorphization of the sintered TiN, however more defects were retained in the samples implanted with only Xe (360 keV) ions. Annealing of defects retained after irradiations were found to be faster in the co-irradiated samples. The migration behavior of implanted Xe was explained by trapping and de-trapping by defects at temperatures below 1200 °C while at temperatures above 1200 °C, it was dominated by grain boundary diffusion, in the un-irradiated samples. In the co-irradiated samples, Xe migrated via fast grain boundaries.",
journal = "Vacuum",
title = "Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN",
volume = "163",
pages = "59-68",
doi = "10.1016/j.vacuum.2019.01.054"
}

Vasco, H. A., Hlatshwayo, T. T., Motloung, S. V., Mlambo, M., Mwankemwa, B. S., Petrović, S. M.,& Skuratov, V. A.. (2019). Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN. in Vacuum, 163, 59-68.
https://doi.org/10.1016/j.vacuum.2019.01.054

Vasco HA, Hlatshwayo TT, Motloung SV, Mlambo M, Mwankemwa BS, Petrović SM, Skuratov VA. Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN. in Vacuum. 2019;163:59-68.
doi:10.1016/j.vacuum.2019.01.054 .

Vasco, H. A., Hlatshwayo, Thulani Thokozani, Motloung, Setumo Victor, Mlambo, Mbuso, Mwankemwa, Benard S., Petrović, Srđan M., Skuratov, Vladimir A., "Effect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN" in Vacuum, 163 (2019):59-68,
https://doi.org/10.1016/j.vacuum.2019.01.054 . .