TY  - JOUR
AU  - Aleksić, Jelena
AU  - Barudžija, Tanja
AU  - Jugović, Dragana
AU  - Mitrić, Miodrag
AU  - Bošković, Marko
AU  - Jagličić, Zvonko
AU  - Lisjak, Darja
AU  - Kostić, Ljiljana
PY  - 2020
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8858
AB  - In this investigation, we have synthesized YbxY1-xF3 solid solutions by fluorination of yttrium and ytterbium sesquioxides with ammonium hydrogen difluoride. According to the XRD analysis, all synthesized YbxY1-xF3 samples have an orthorhombic crystal structure belonging to the β-YF3 structural type. The refinement of crystal structure was done by the Rietveld method within the Pnma space group using the TCH pseudo-Voigt function. The anisotropic peak broadening was analyzed, and the average apparent crystallite size is about 50 nm with a small anisotropy of shape, while the significant microstrain that is highly anisotropic is present in all samples. The temperature-dependent magnetic susceptibility was analyzed by applying the model of a free ion perturbed by the crystal field. We have obtained the effective magnetic quantum numbers Mieff of four Kramer's doublets of Yb3+ ion along with the entire crystal field splitting of the 2F7/2 manifold of Yb3+ in YF3. The acquired maximum energy splitting of the ground level is about 150 K in our most diluted samples. The field-dependent isothermal magnetization measurements were carried out at various temperatures and analyzed by classical Langevin function. Results obtained from magnetic measurements show that all YbxY1-xF3 (x ≠ 0) solid solutions exhibit pure paramagnetic behavior in the whole temperature range from 2 to 300 K, with a predominant antiferromagnetic exchange interactions. © 2020 Elsevier Ltd
T2  - Journal of Physics and Chemistry of Solids
T1  - Investigation of structural, microstructural and magnetic properties of YbxY1-xF3 solid solutions
VL  - 142
SP  - 109449
DO  - 10.1016/j.jpcs.2020.109449
ER  - 

@article{
author = "Aleksić, Jelena and Barudžija, Tanja and Jugović, Dragana and Mitrić, Miodrag and Bošković, Marko and Jagličić, Zvonko and Lisjak, Darja and Kostić, Ljiljana",
year = "2020",
abstract = "In this investigation, we have synthesized YbxY1-xF3 solid solutions by fluorination of yttrium and ytterbium sesquioxides with ammonium hydrogen difluoride. According to the XRD analysis, all synthesized YbxY1-xF3 samples have an orthorhombic crystal structure belonging to the β-YF3 structural type. The refinement of crystal structure was done by the Rietveld method within the Pnma space group using the TCH pseudo-Voigt function. The anisotropic peak broadening was analyzed, and the average apparent crystallite size is about 50 nm with a small anisotropy of shape, while the significant microstrain that is highly anisotropic is present in all samples. The temperature-dependent magnetic susceptibility was analyzed by applying the model of a free ion perturbed by the crystal field. We have obtained the effective magnetic quantum numbers Mieff of four Kramer's doublets of Yb3+ ion along with the entire crystal field splitting of the 2F7/2 manifold of Yb3+ in YF3. The acquired maximum energy splitting of the ground level is about 150 K in our most diluted samples. The field-dependent isothermal magnetization measurements were carried out at various temperatures and analyzed by classical Langevin function. Results obtained from magnetic measurements show that all YbxY1-xF3 (x ≠ 0) solid solutions exhibit pure paramagnetic behavior in the whole temperature range from 2 to 300 K, with a predominant antiferromagnetic exchange interactions. © 2020 Elsevier Ltd",
journal = "Journal of Physics and Chemistry of Solids",
title = "Investigation of structural, microstructural and magnetic properties of YbxY1-xF3 solid solutions",
volume = "142",
pages = "109449",
doi = "10.1016/j.jpcs.2020.109449"
}

Aleksić, J., Barudžija, T., Jugović, D., Mitrić, M., Bošković, M., Jagličić, Z., Lisjak, D.,& Kostić, L.. (2020). Investigation of structural, microstructural and magnetic properties of YbxY1-xF3 solid solutions. in Journal of Physics and Chemistry of Solids, 142, 109449.
https://doi.org/10.1016/j.jpcs.2020.109449

Aleksić J, Barudžija T, Jugović D, Mitrić M, Bošković M, Jagličić Z, Lisjak D, Kostić L. Investigation of structural, microstructural and magnetic properties of YbxY1-xF3 solid solutions. in Journal of Physics and Chemistry of Solids. 2020;142:109449.
doi:10.1016/j.jpcs.2020.109449 .

Aleksić, Jelena, Barudžija, Tanja, Jugović, Dragana, Mitrić, Miodrag, Bošković, Marko, Jagličić, Zvonko, Lisjak, Darja, Kostić, Ljiljana, "Investigation of structural, microstructural and magnetic properties of YbxY1-xF3 solid solutions" in Journal of Physics and Chemistry of Solids, 142 (2020):109449,
https://doi.org/10.1016/j.jpcs.2020.109449 . .

TY  - CONF
AU  - Ilić, S.
AU  - Jevtić, A.
AU  - Stanković, Srboljub
AU  - Davidović, Vojkan S.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8657
AB  - In this paper we investigated the feasibility of using a commercial programmable floating-gate MOS transistor (EPAD) as a radiation dosimeter. The results show that EPAD with zero bias have the sensitivity of 9.2 mV/Gy and low fading. EPADs with a higher initial threshold voltage show very good linearity with the radiation dose. After its annealing at 70 °C there is a visible recovery of transfer characteristics due to a parasitic parallel resistive path that occurs during irradiation. Apart from that, the threshold voltage is slightly recovered. The programming time of an EPAD increases with the absorbed dose and depends on gate biasing during irradiation. © 2019 IEEE.
PB  - IEEE
C3  - 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
T1  - Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry
SP  - 67
EP  - 70
DO  - 10.1109/MIEL.2019.8889570
ER  - 

@conference{
author = "Ilić, S. and Jevtić, A. and Stanković, Srboljub and Davidović, Vojkan S.",
year = "2019",
abstract = "In this paper we investigated the feasibility of using a commercial programmable floating-gate MOS transistor (EPAD) as a radiation dosimeter. The results show that EPAD with zero bias have the sensitivity of 9.2 mV/Gy and low fading. EPADs with a higher initial threshold voltage show very good linearity with the radiation dose. After its annealing at 70 °C there is a visible recovery of transfer characteristics due to a parasitic parallel resistive path that occurs during irradiation. Apart from that, the threshold voltage is slightly recovered. The programming time of an EPAD increases with the absorbed dose and depends on gate biasing during irradiation. © 2019 IEEE.",
publisher = "IEEE",
journal = "2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings",
title = "Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry",
pages = "67-70",
doi = "10.1109/MIEL.2019.8889570"
}

Ilić, S., Jevtić, A., Stanković, S.,& Davidović, V. S.. (2019). Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry. in 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
IEEE., 67-70.
https://doi.org/10.1109/MIEL.2019.8889570

Ilić S, Jevtić A, Stanković S, Davidović VS. Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry. in 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings. 2019;:67-70.
doi:10.1109/MIEL.2019.8889570 .

Ilić, S., Jevtić, A., Stanković, Srboljub, Davidović, Vojkan S., "Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry" in 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings (2019):67-70,
https://doi.org/10.1109/MIEL.2019.8889570 . .

TY  - JOUR
AU  - Pejović, Svetlana M.
AU  - Pejović, Milić M.
AU  - Živanović, Miloš Z.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8371
AB  - In order to track “small dose effect” leading to stabilization of RADFETs with 1 μm thick oxide fabricated at Tyndall National Institute, Cork, Ireland irradiation was performed with gamma-rays in the radiation dose interval from 1 to 5 cGy, followed with room temperature annealing for the time of 28 days. Gate bias during irradiation was 0, 2.5 and 5 V. Threshold voltage shift ΔVT determined from transfer characteristics in saturation were followed during irradiation and annealing. It was shown that there is significant increase in ΔVT for 1 cGy radiation dose and those are 36.3, 43.3 mV and 45.7 mV for gate bias 0, 2.5 V and 5 V, respectively. For higher radiation doses ΔVT also increases, however, such increase is much lower. RADFETs fading at room temperature lead to permanent decrease in ΔVT and after 28 days the threshold voltage for devices is returned to virgin device value. Small dose effect is confirmed and radiation dose of at least 5 cGy is necessary for RADFET stabilization before their use in dosimetric application. After RADFETs stabilization they were irradiated in dose interval from 10 to 50 cGy with gate bias of 0, 2.5 and 5 V. It was shown that there is a linear dependence between ΔVT and absorbed radiation dose D, for gate bias during irradiation 0, 2.5 and 5 V. Defects responsible for threshold voltage shift, formed during irradiation as well as their neutralization/compensation during annealing, are also discussed. © 2019
T2  - Applied Radiation and Isotopes
T1  - Small dose effect in RADFET with thick gate oxide
VL  - 152
SP  - 72
EP  - 77
DO  - 10.1016/j.apradiso.2019.06.034
ER  - 

@article{
author = "Pejović, Svetlana M. and Pejović, Milić M. and Živanović, Miloš Z.",
year = "2019",
abstract = "In order to track “small dose effect” leading to stabilization of RADFETs with 1 μm thick oxide fabricated at Tyndall National Institute, Cork, Ireland irradiation was performed with gamma-rays in the radiation dose interval from 1 to 5 cGy, followed with room temperature annealing for the time of 28 days. Gate bias during irradiation was 0, 2.5 and 5 V. Threshold voltage shift ΔVT determined from transfer characteristics in saturation were followed during irradiation and annealing. It was shown that there is significant increase in ΔVT for 1 cGy radiation dose and those are 36.3, 43.3 mV and 45.7 mV for gate bias 0, 2.5 V and 5 V, respectively. For higher radiation doses ΔVT also increases, however, such increase is much lower. RADFETs fading at room temperature lead to permanent decrease in ΔVT and after 28 days the threshold voltage for devices is returned to virgin device value. Small dose effect is confirmed and radiation dose of at least 5 cGy is necessary for RADFET stabilization before their use in dosimetric application. After RADFETs stabilization they were irradiated in dose interval from 10 to 50 cGy with gate bias of 0, 2.5 and 5 V. It was shown that there is a linear dependence between ΔVT and absorbed radiation dose D, for gate bias during irradiation 0, 2.5 and 5 V. Defects responsible for threshold voltage shift, formed during irradiation as well as their neutralization/compensation during annealing, are also discussed. © 2019",
journal = "Applied Radiation and Isotopes",
title = "Small dose effect in RADFET with thick gate oxide",
volume = "152",
pages = "72-77",
doi = "10.1016/j.apradiso.2019.06.034"
}

Pejović, S. M., Pejović, M. M.,& Živanović, M. Z.. (2019). Small dose effect in RADFET with thick gate oxide. in Applied Radiation and Isotopes, 152, 72-77.
https://doi.org/10.1016/j.apradiso.2019.06.034

Pejović SM, Pejović MM, Živanović MZ. Small dose effect in RADFET with thick gate oxide. in Applied Radiation and Isotopes. 2019;152:72-77.
doi:10.1016/j.apradiso.2019.06.034 .

Pejović, Svetlana M., Pejović, Milić M., Živanović, Miloš Z., "Small dose effect in RADFET with thick gate oxide" in Applied Radiation and Isotopes, 152 (2019):72-77,
https://doi.org/10.1016/j.apradiso.2019.06.034 . .

TY  - JOUR
AU  - Davidović, Vojkan
AU  - Danković, Danijel
AU  - Golubović, Snežana
AU  - Đorić-Veljković, Snežana
AU  - Manić, Ivica
AU  - Prijić, Zoran
AU  - Prijić, Aneta
AU  - Stojadinović, Ninoslav
AU  - Stanković, Srboljub
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12131
AB  - In this paper we provide an overview of instabilities observed in commercial power VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The results have indicated that irradiation of previously NBT stressed devices leads to additional threshold voltage shift, while NBT stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. This points to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of exposure have to be considered. It has also been shown that changes in the densities of oxide trapped charge and interface traps during spontaneous recovery after each of applied stresses can be significant, thus leading to additional instability, even though the threshold voltage seems to remain stable, pointing to the need for clarifying the responsible mechanisms.
T2  - Facta universitatis - series: Electronics and Energetics
T1  - NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs
VL  - 31
IS  - 3
SP  - 367
EP  - 388
DO  - 10.2298/FUEE1803367D
ER  - 

@article{
author = "Davidović, Vojkan and Danković, Danijel and Golubović, Snežana and Đorić-Veljković, Snežana and Manić, Ivica and Prijić, Zoran and Prijić, Aneta and Stojadinović, Ninoslav and Stanković, Srboljub",
year = "2018",
abstract = "In this paper we provide an overview of instabilities observed in commercial power VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The results have indicated that irradiation of previously NBT stressed devices leads to additional threshold voltage shift, while NBT stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. This points to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of exposure have to be considered. It has also been shown that changes in the densities of oxide trapped charge and interface traps during spontaneous recovery after each of applied stresses can be significant, thus leading to additional instability, even though the threshold voltage seems to remain stable, pointing to the need for clarifying the responsible mechanisms.",
journal = "Facta universitatis - series: Electronics and Energetics",
title = "NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs",
volume = "31",
number = "3",
pages = "367-388",
doi = "10.2298/FUEE1803367D"
}

Davidović, V., Danković, D., Golubović, S., Đorić-Veljković, S., Manić, I., Prijić, Z., Prijić, A., Stojadinović, N.,& Stanković, S.. (2018). NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs. in Facta universitatis - series: Electronics and Energetics, 31(3), 367-388.
https://doi.org/10.2298/FUEE1803367D

Davidović V, Danković D, Golubović S, Đorić-Veljković S, Manić I, Prijić Z, Prijić A, Stojadinović N, Stanković S. NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs. in Facta universitatis - series: Electronics and Energetics. 2018;31(3):367-388.
doi:10.2298/FUEE1803367D .

Davidović, Vojkan, Danković, Danijel, Golubović, Snežana, Đorić-Veljković, Snežana, Manić, Ivica, Prijić, Zoran, Prijić, Aneta, Stojadinović, Ninoslav, Stanković, Srboljub, "NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs" in Facta universitatis - series: Electronics and Energetics, 31, no. 3 (2018):367-388,
https://doi.org/10.2298/FUEE1803367D . .