TY  - JOUR
AU  - Validžić, Ivana Lj.
AU  - Popović, Maja
AU  - Potočnik, Jelena
AU  - Graf, Christina
AU  - Joschko, Maximilian
AU  - Kuznetsova, Yulia A.
AU  - Zatsepin, Dmitry A.
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10750
AB  - Amorphous, non-doped, and copper- and selenium-doped Sb2S3 nanoparticles were synthesized by a hot-injection method. Zinc-doped Sb2S3 nanoparticles were prepared for the first time using the same approach. Electron microscopy revealed that spherical nanoparticles of 1–4 nanometers aggregated into larger spherical clusters. Introducing dopants into the Sb2S3 structure neither influenced the samples’ spherical morphology nor their sizes. The presence of the dopants (Cu, Se, or Zn) was confirmed by energy dispersive X-ray (EDX) and, in the case of Zn, also by inductively coupled plasma-mass spectrometry (ICP-MS). The X-ray powder diffraction (XRPD) patterns of the non-doped and doped samples imply an amorphous structure. Crystalline Zn-doped Sb2S3 revealed defined peaks from only the Sb2S3 phase, indicating successful doping. Diffuse reflectance spectroscopy (DRS) revealed high optical bandgap energies (2.03–2.12 eV) compared to the values (1.6–1.7 eV) for large non-doped and doped particles obtained at 240 °C, which might be attributed to a quantum size effect. X-ray photoelectron spectroscopy (XPS) revealed a phase without any impurities for the undoped and characteristic peaks for copper, selenium, and zinc Auger for the doped samples. XPS valence band confirm for the Zn-doped particles a shift towards lower binding energy compared to the non-doped samples, indicating successful doping. Photoluminescence (PL) measurements show that embedding Zn into the Sb2S3 host lattice suppresses the wide luminescence band related to intrinsic vacancy defects. Narrow peaks at 1.7–2.4 eV were found to be associated with singlet excitons. The energy dependence of the light emission on the synthesized nanoparticles’ size suggests quantum confinement. © 2023, The Author(s), under exclusive licence to Springer Nature B.V.
T2  - Journal of Nanoparticle Research
T1  - Amorphous non-doped and Se-, Cu-, and Zn-doped Sb2S3 nanoparticles prepared by a hot-injection method: bandgap tuning and possible observation of the quantum size effect
VL  - 25
IS  - 3
SP  - 48
DO  - 10.1007/s11051-023-05695-5
ER  - 

@article{
author = "Validžić, Ivana Lj. and Popović, Maja and Potočnik, Jelena and Graf, Christina and Joschko, Maximilian and Kuznetsova, Yulia A. and Zatsepin, Dmitry A.",
year = "2023",
abstract = "Amorphous, non-doped, and copper- and selenium-doped Sb2S3 nanoparticles were synthesized by a hot-injection method. Zinc-doped Sb2S3 nanoparticles were prepared for the first time using the same approach. Electron microscopy revealed that spherical nanoparticles of 1–4 nanometers aggregated into larger spherical clusters. Introducing dopants into the Sb2S3 structure neither influenced the samples’ spherical morphology nor their sizes. The presence of the dopants (Cu, Se, or Zn) was confirmed by energy dispersive X-ray (EDX) and, in the case of Zn, also by inductively coupled plasma-mass spectrometry (ICP-MS). The X-ray powder diffraction (XRPD) patterns of the non-doped and doped samples imply an amorphous structure. Crystalline Zn-doped Sb2S3 revealed defined peaks from only the Sb2S3 phase, indicating successful doping. Diffuse reflectance spectroscopy (DRS) revealed high optical bandgap energies (2.03–2.12 eV) compared to the values (1.6–1.7 eV) for large non-doped and doped particles obtained at 240 °C, which might be attributed to a quantum size effect. X-ray photoelectron spectroscopy (XPS) revealed a phase without any impurities for the undoped and characteristic peaks for copper, selenium, and zinc Auger for the doped samples. XPS valence band confirm for the Zn-doped particles a shift towards lower binding energy compared to the non-doped samples, indicating successful doping. Photoluminescence (PL) measurements show that embedding Zn into the Sb2S3 host lattice suppresses the wide luminescence band related to intrinsic vacancy defects. Narrow peaks at 1.7–2.4 eV were found to be associated with singlet excitons. The energy dependence of the light emission on the synthesized nanoparticles’ size suggests quantum confinement. © 2023, The Author(s), under exclusive licence to Springer Nature B.V.",
journal = "Journal of Nanoparticle Research",
title = "Amorphous non-doped and Se-, Cu-, and Zn-doped Sb2S3 nanoparticles prepared by a hot-injection method: bandgap tuning and possible observation of the quantum size effect",
volume = "25",
number = "3",
pages = "48",
doi = "10.1007/s11051-023-05695-5"
}

Validžić, I. Lj., Popović, M., Potočnik, J., Graf, C., Joschko, M., Kuznetsova, Y. A.,& Zatsepin, D. A.. (2023). Amorphous non-doped and Se-, Cu-, and Zn-doped Sb2S3 nanoparticles prepared by a hot-injection method: bandgap tuning and possible observation of the quantum size effect. in Journal of Nanoparticle Research, 25(3), 48.
https://doi.org/10.1007/s11051-023-05695-5

Validžić IL, Popović M, Potočnik J, Graf C, Joschko M, Kuznetsova YA, Zatsepin DA. Amorphous non-doped and Se-, Cu-, and Zn-doped Sb2S3 nanoparticles prepared by a hot-injection method: bandgap tuning and possible observation of the quantum size effect. in Journal of Nanoparticle Research. 2023;25(3):48.
doi:10.1007/s11051-023-05695-5 .

Validžić, Ivana Lj., Popović, Maja, Potočnik, Jelena, Graf, Christina, Joschko, Maximilian, Kuznetsova, Yulia A., Zatsepin, Dmitry A., "Amorphous non-doped and Se-, Cu-, and Zn-doped Sb2S3 nanoparticles prepared by a hot-injection method: bandgap tuning and possible observation of the quantum size effect" in Journal of Nanoparticle Research, 25, no. 3 (2023):48,
https://doi.org/10.1007/s11051-023-05695-5 . .

TY  - JOUR
AU  - Lojpur, Vesna
AU  - Joschko, Maximilian
AU  - Graf, Christina
AU  - Radmilović, Nadežda
AU  - Novaković, Mirjana M.
AU  - Validžić, Ivana Lj.
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9955
AB  - Amorphous non-doped, iodine- and tin-doped Sb2S3 nanoparticles were prepared via the hot-injection method. HRTEM of amorphous undoped and doped samples revealed the formation of spherical nanoparticles of 20–50 nm diameter aggregated into clusters in the size of 100–200 nm. EDX analysis indicated the presence of desired elements in all observed samples. The bandgaps of non-doped and doped samples were determined from the reflectance spectra, and variations of the bandgaps, even small ones, are insufficient indications of doping. These uncertainties are further clarified by investigating crystalline undoped and doped samples in addition to the amorphous ones. XRPD results of the amorphous samples confirmed the amorphous structure, while Le Bail refinements of the crystalline samples show well-defined peaks from only the Sb2S3 phase, indicating a successful doping process. XPS measurements revealed that the phase of the undoped sample is free of impurities and that 3 d peaks of iodine and tin in the doped samples are present. The XPS valence bands shifted towards higher (I) or lower (Sn) binding energies compared to the undoped samples for both amorphous and crystalline samples, which is an additional support that incorporation of dopant ions in the Sb2S3 lattice took place.
T2  - Materials Science in Semiconductor Processing
T1  - Structural, morphological, optical, and electronic properties of amorphous non-doped and I and Sn doped Sb2S3 nanoparticles
VL  - 137
SP  - 106196
DO  - 10.1016/j.mssp.2021.106196
ER  - 

@article{
author = "Lojpur, Vesna and Joschko, Maximilian and Graf, Christina and Radmilović, Nadežda and Novaković, Mirjana M. and Validžić, Ivana Lj.",
year = "2022",
abstract = "Amorphous non-doped, iodine- and tin-doped Sb2S3 nanoparticles were prepared via the hot-injection method. HRTEM of amorphous undoped and doped samples revealed the formation of spherical nanoparticles of 20–50 nm diameter aggregated into clusters in the size of 100–200 nm. EDX analysis indicated the presence of desired elements in all observed samples. The bandgaps of non-doped and doped samples were determined from the reflectance spectra, and variations of the bandgaps, even small ones, are insufficient indications of doping. These uncertainties are further clarified by investigating crystalline undoped and doped samples in addition to the amorphous ones. XRPD results of the amorphous samples confirmed the amorphous structure, while Le Bail refinements of the crystalline samples show well-defined peaks from only the Sb2S3 phase, indicating a successful doping process. XPS measurements revealed that the phase of the undoped sample is free of impurities and that 3 d peaks of iodine and tin in the doped samples are present. The XPS valence bands shifted towards higher (I) or lower (Sn) binding energies compared to the undoped samples for both amorphous and crystalline samples, which is an additional support that incorporation of dopant ions in the Sb2S3 lattice took place.",
journal = "Materials Science in Semiconductor Processing",
title = "Structural, morphological, optical, and electronic properties of amorphous non-doped and I and Sn doped Sb2S3 nanoparticles",
volume = "137",
pages = "106196",
doi = "10.1016/j.mssp.2021.106196"
}

Lojpur, V., Joschko, M., Graf, C., Radmilović, N., Novaković, M. M.,& Validžić, I. Lj.. (2022). Structural, morphological, optical, and electronic properties of amorphous non-doped and I and Sn doped Sb2S3 nanoparticles. in Materials Science in Semiconductor Processing, 137, 106196.
https://doi.org/10.1016/j.mssp.2021.106196

Lojpur V, Joschko M, Graf C, Radmilović N, Novaković MM, Validžić IL. Structural, morphological, optical, and electronic properties of amorphous non-doped and I and Sn doped Sb2S3 nanoparticles. in Materials Science in Semiconductor Processing. 2022;137:106196.
doi:10.1016/j.mssp.2021.106196 .

Lojpur, Vesna, Joschko, Maximilian, Graf, Christina, Radmilović, Nadežda, Novaković, Mirjana M., Validžić, Ivana Lj., "Structural, morphological, optical, and electronic properties of amorphous non-doped and I and Sn doped Sb2S3 nanoparticles" in Materials Science in Semiconductor Processing, 137 (2022):106196,
https://doi.org/10.1016/j.mssp.2021.106196 . .